New Insight into Nanoscale Identification of the Polar Axis Direction in Organic Ferroelectric Films.

Ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) [P(VDF-co-TrFE)] thin films have been deposited by spin-coating onto the Bi0.5Na0.5TiO3(BNT)/LNO/SiO2/Si heterostructure. The copolymer microstructure investigated by using grazing-incidence wide-angle X-ray diffraction (GIWAXD) and deduced from the (200)/(110) reflections demonstrates that the b-axis in the P(VDF-co-TrFE) orthorhombic unit cell is either in the plane or out of the plane, depending on the face-on or on the two types of edge-on (called I and II) lamellar structures locally identified by atomic force microscopy (AFM). For edge-on I lamellae regions, the electroactivity (dzzeff ∼ -50.3 pm/V) is found to be twice as high as that measured for both edge-on II or face-on crystalline domains, as probed by piezoresponse force microscopy (PFM). This result is directly correlated to the direction of the ferroelectric polarization vector in the P(VDF-co-TrFE) orthorhombic cell: larger nanoscale piezoactivity is related to the b-axis which lies along the normal to the substrate plane in the case of the edge-on I domains. Here, the ability to thoroughly gain access to the as-grown polar axis direction within the edge-on crystal lamellae of the ferroelectric organic layers is evidenced by combining the nanometric resolution of the PFM technique with a statistical approach based on its spectroscopic tool. By the gathering of information at the nanoscale, two orientations for the polar b-axis are identified in edge-on lamellar structures. These findings contribute to a better understanding of the structure-property relationships in P(VDF-co-TrFE) films, which is a key issue for the design of future advanced organic electronic devices.

3D FEM Analysis of High-Frequency AlN-Based PMUT Arrays on Cavity SOI.

This paper presents three-dimensional (3D) models of high-frequency piezoelectric micromachined ultrasonic transducers (PMUTs) based on the finite element method (FEM). These models are verified with fabricated aluminum nitride (AlN)-based PMUT arrays. The 3D numerical model consists of a sandwiched piezoelectric structure, a silicon passive layer, and a silicon substrate with a cavity. Two types of parameters are simulated with periodic boundary conditions: (1) the resonant frequencies and mode shapes of PMUT, and (2) the electrical impedance and acoustic field of PMUT loaded with air and water. The resonant frequencies and mode shapes of an electrically connected PMUT array are obtained with a laser Doppler vibrometer (LDV). The first resonant frequency difference between 3D FEM simulation and the measurement for a 16-MHz PMUT is reasonably within 6%, which is just one-third of that between the analytical method and the measurement. The electrical impedance of the PMUT array measured in air and water is consistent with the simulation results. The 3D model is suitable for predicting electrical and acoustic performance and, thus, optimizing the structure of high-frequency PMUTs. It also has good potential to analyze the transmission and reception performances of a PMUT array for future compact ultrasonic systems.

Lead-Free α-La2WO6 Ferroelectric Thin Films.

(001)-Epitaxial La2WO6 (LWO) thin films are grown by pulsed laser deposition on (001)-oriented SrTiO3 (STO) substrates. The α-phase (high-temperature phase in bulk) is successfully stabilized with an orthorhombic structure (a = 16.585(1) Å, b = 5.717(2) Å, c = 8.865(5) Å). X-ray-diffraction pole-figure measurements suggest that crystallographic relationships between the film and substrate are [100]LWO ∥ [110]STO, [010]LWO ∥ [11̅0]STO and [001]LWO ∥ [001]STO. From optical properties, investigated by spectroscopic ellipsometry, we extract a refractive-index value around 2 (at 500 nm) along with the presence of two absorption bands situated, respectively at 3.07 and 6.32 eV. Ferroelectricity is evidenced as well on macroscale (standard polarization measurements) as on nanoscale, calling for experiments based on piezo-response force-microscopy, and confirmed with in situ scanning-and-tunneling measurements performed with a transmission electron microscope. This work highlights the ferroelectric behavior, at room temperature, in high-temperature LWO phase when stabilized in thin film and opens the way to new functional oxide thin films dedicated to advanced electronic devices.

Broadband dielectric characterization of sapphire/TiOx/Ba0.3Sr0.7TiO3 (111)-oriented thin films for the realization of a tunable interdigitated capacitor.

A complete microwave characterization up to 67 GHz using specific coplanar waveguides was performed to determine the dielectric properties (permittivity, losses, and tunability) of sapphire/TiOx/Ba0.3Sr0.7TiO3 (BST) (111)-oriented thin films. To that end, BaxSr1-xTiO3 thin films were deposited by RF magnetron sputtering on sapphire (0001) substrate. To control the preferred (111) orientation, a TiOx buffer layer was deposited on sapphire. According to the detailed knowledge of the material properties, it has been possible to conceive, fabricate, and test interdigitated capacitors, the basic element for future microwave tunable applications. Retention of capacitive behavior up to 67 GHz and a tunability of 32% at 67 GHz at an applied voltage of 30 V (150 kV/cm) were observed. The Q-factor remains greater than 30 over the entire frequency band. The possibility of a complete characterization of the material for the realization of high-performance interdigitated capacitors opens the door to microwave device fabrication.

Lead zirconate titanate nanoscale patterning by ultraviolet-based lithography lift-off technique for nano-electromechanical system applications.

The advantage of using lead zirconate titanate (PbZr(0.54)Ti(0.46)O(3)) ceramics as an active material in nanoelectromechanical systems (NEMS) comes from its relatively high piezoelectric coefficients. However, its integration within a technological process is limited by the difficulty of structuring this material with submicrometer resolution at the wafer scale. In this work, we develop a specific patterning method based on optical lithography coupled with a dual-layer resist process. The main objective is to obtain sub-micrometer features by lifting off a 100-nm-thick PZT layer while preserving the material's piezoelectric properties. A subsequent result of the developed method is the ability to stack several layers with a lateral resolution of few tens of nanometers, which is mandatory for the fabrication of NEMS with integrated actuation and read-out capabilities.

Integrative technology-based approach of microelectromechanical systems (MEMS) for biosensing applications.

In this work we simultaneously aim at addressing the design and fabrication of microelectromechanical systems (MEMS) for biological applications bearing actuation and readout capabilities together with adapted tools dedicated to surface functionalization at the microscale. The biosensing platform is based on arrays of silicon micromembranes with piezoelectric actuation and piezoresistive read-out capabilities. The detection of the cytochrome C protein using molecularly imprinted polymers (MIPs) as functional layer is demonstrated. The adapted functionalization tool specifically developed to match the micromembranes' platform is an array of silicon cantilevers incorporating precise force sensors for the trim and force measurements during deposition of biological materials onto the sensors' active area. In either case, associated analog electronics is specifically realized to deal with specific signals treatment fed through the MEMS-based devices.