Enhanced photoelectrochemical water splitting using carbon cloth functionalized with ZnO nanostructures via polydopamine assisted electroless deposition.

ZnO nanorods (ZnO-nr) have been widely studied as a promising nanomaterial for photoelectrochemical water splitting. However, almost all prior studies employed planar electrodes. Here, we investigated the performance of ZnO nanorods on a fibrous carbon cloth (CC) electrode, which offers a larger surface area for functionalization of photocatalysts. ZnO nanorods and Ni nanofilm were deposited on carbon cloth substrates for investigation as the photoanode and cathode of a photoelectrochemical water splitting setup, respectively. The use of polydopamine in the electroless deposition of ZnO ensured a uniform distribution of nanorods that were strongly adherent to the microfiber surface of the carbon cloth. Compared to ZnO nanorods grown on planar ITO/glass substrates, the CC-based ZnO photoanodes exhibited smaller onset potentials (1.1 VRHEvs. 1.8 VRHE), ∼40× larger dark faradaic currents at 1.23 VRHE and 5.5×-9× improvement in photoconversion efficiencies. Ni/CC cathodes were also found to exhibit a lower overpotential@10 mA cm-2 than Ni/Cu by 90 mV. The photocurrent obtained from the ZnO-nr/CC anode was highly stable across an hour and the peak current decreased by only 5% across 5 cycles of illumination, compared to 72% for the planar ZnO-nr/ITO anode. However, the response of the CC-based setups to changes in the illumination conditions was slower, taking hundreds of seconds to reach peak photocurrent, compared to tens of seconds for the planar electrodes. Using cyclic voltammetry, the double-layer capacitance of the electrodes was measured, and it was shown that the increased efficiency of the ZnO-nr/CC anode was due to a 2 order of magnitude increase in electrochemically active sites provided by the copious microfiber surface of the carbon cloth.

Gamma-Ray Irradiation Induced Ultrahigh Room-Temperature Ferromagnetism in MoS2 Sputtered Few-Layered Thin Films.

Defect engineering is of great interest to the two-dimensional (2D) materials community. If nonmagnetic transition-metal dichalcogenides can possess room-temperature ferromagnetism (RTFM) induced by defects, then they will be ideal for application as spintronic materials and also for studying the relation between electronic and magnetic properties of quantum-confined structures. Thus, in this work, we aimed to study gamma-ray irradiation effects on MoS2, which is diamagnetic in nature. We found that gamma-ray exposure up to 9 kGy on few-layered (3.5 nm) MoS2 films induces an ultrahigh saturation magnetization of around 610 emu/cm3 at RT, whereas no significant changes were observed in the structure and magnetism of bulk MoS2 (40 nm) films even after gamma-ray irradiation. The RTFM in a few-layered gamma-ray irradiated sample is most likely due to the bound magnetic polaron created by the spin interaction of Mo 4d ions with trapped electrons present at sulfur vacancies. In addition, density functional theory (DFT) calculations suggest that the defect containing one Mo and two S vacancies is the dominant defect inducing the RTFM in MoS2. These DFT results are consistent with Raman, X-ray photoelectron spectroscopy, and ESR spectroscopy results, and they confirm the breakage of Mo and S bonds and the existence of vacancies after gamma-ray irradiation. Overall, this study suggests that the occurrence of magnetism in gamma-ray irradiated MoS2 few-layered films could be attributed to the synergistic effects of magnetic moments arising from the existence of both Mo and S vacancies as well as lattice distortion of the MoS2 structure.

Biological sensing using anomalous hall effect devices.

This paper outlines an approach to biological sensing involving the use of spintronic devices to sense magnetic particles attached to biological carriers. We developed an enzyme-linked immunosorbent assay (ELISA)-based Anomalous Hall Effect magnetic sensor via surface functionalization using Triethoxysilylundecanal (TESUD). The proposed sensor uses a CoFeB/MgO heterostructure with a perpendicular magnetic anisotropy. Through several sets of magnetic layer thickness, this work also explored the optimization process of ferromagnetic layer used. Our spintronics-based biosensor is compatible with semiconductor fabrication technology and can be effectively miniaturized to integrate with semiconductor chips, which has the advantage of reduced manufacturing cost and reduced power consumption. The proposed sensor provides real-time measurement results and it is competitive to conventional biological colorimetric measurement systems in terms of accuracy and immediacy.

A highly sensitive wearable flexible strain sensor based on polycrystalline MoS2 thin film.

The present study investigates the piezoresistive properties of polycrystalline MoS2 film for strain-sensing applications. The gauge factor (GF) of the flexible MoS2 device (MoS2/PET) has been calculated to be 102 ± 5 in the stress range from ~7 MPa to ~14 MPa. In addition, to improve the sensing stress range, the flexible strain sensors are encapsulated by SU-8. The effect of encapsulation layer thickness is reflected in the GF, which is attributed to the shifting of the neutral axis. However, the calculated GF is constant in the higher stress range, 80 ± 2 and 12 ± 1 for 2 µm and 10 µm thick SU-8, respectively. Herein, we report a cost-effective and scalable approach to fabricate large-area polycrystalline MoS2-based flexible sensors for a wider stress range. The encapsulated devices remained undistorted and intact for stress values beyond 14 MPa. Further, we demonstrate the durability of the fabricated sensors with body movements, such as hand gestures, for all the three types of strain sensor.