Low-κ, narrow linewidth III-V-on-SOI distributed feedback lasers with backside sampled Bragg gratings.

We demonstrate a heterogeneously integrated III-V-on-SOI distributed feedback laser with a low grating strength (κ < 40 cm-1) and a narrow linewidth of Δν = 118 kHz. The laser operates single mode with a side-mode suppression ratio over 45 dB, provides a single-sided waveguide-coupled output power of 22 mW (13.4 dBm) and has a wall-plug efficiency of 17%. The dynamic characteristics were also evaluated, obtaining an intrinsic 3 dB modulation bandwidth of 14 GHz and a photon lifetime of 8 ps. Large-signal intensity modulation using a 231-1 PRBS pattern length revealed open eye diagrams up to 25 Gb/s and a penalty on the dynamic extinction ratio lower than 1 dB after transmission over a 2 km standard single mode optical fiber.

On-Chip Mid-Infrared Supercontinuum Generation from 3 to 13 µm Wavelength.

Midinfrared spectroscopy is a universal way to identify chemical and biological substances. Indeed, when interacting with a light beam, most molecules are responsible for absorption at specific wavelengths in the mid-IR spectrum, allowing to detect and quantify small traces of substances. On-chip broadband light sources in the mid-infrared are thus of significant interest for compact sensing devices. In that regard, supercontinuum generation offers a mean to efficiently perform coherent light conversion over an ultrawide spectral range, in a single and compact device. This work reports the experimental demonstration of on-chip two-octave supercontinuum generation in the mid-infrared wavelength, ranging from 3 to 13 µm (that is larger than 2500 cm-1) and covering almost the full transparency window of germanium. Such an ultrawide spectrum is achieved thanks to the unique features of Ge-rich graded SiGe waveguides, which allow second-order dispersion tailoring and low propagation losses over a wide wavelength range. The influence of the pump wavelength and power on the supercontinuum spectra has been studied. A good agreement between the numerical simulations and the experimental results is reported. Furthermore, a very high coherence is predicted in the entire spectrum. These results pave the way for wideband, coherent, and compact mid-infrared light sources by using a single device and compatible with large-scale fabrication processes.

On-chip Fourier-transform spectrometer based on spatial heterodyning tuned by thermo-optic effect.

Miniaturized optical spectrometers providing broadband operation and fine resolution have an immense potential for applications in remote sensing, non-invasive medical diagnostics and astronomy. Indeed, optical spectrometers working in the mid-infrared spectral range have garnered a great interest for their singular capability to monitor the main absorption fingerprints of a wide range of chemical and biological substances. Fourier-transform spectrometers (FTS) are a particularly interesting solution for the on-chip integration due to their superior robustness against fabrication imperfections. However, the performance of current on-chip FTS implementations is limited by tradeoffs in bandwidth and resolution. Here, we propose a new FTS approach that gathers the advantages of spatial heterodyning and optical path tuning by thermo-optic effect to overcome this tradeoff. The high resolution is provided by spatial multiplexing among different interferometers with increasing imbalance length, while the broadband operation is enabled by fine tuning of the optical path delay in each interferometer harnessing the thermo-optic effect. Capitalizing on this concept, we experimentally demonstrate a mid-infrared SiGe FTS, with a resolution better than 15 cm-1 and a bandwidth of 603 cm-1 near 7.7 µm wavelength with a 10 MZI array. This is a resolution comparable to state-of-the-art on-chip mid-infrared spectrometers with a 4-fold bandwidth increase with a footprint divided by a factor two.

Broadband integrated racetrack ring resonators for long-wave infrared photonics.

Long-wave infrared photonics is an exciting research field meant to revolutionize our daily life by means of key advances in several domains including communications, imaging systems, medical care, environmental monitoring, or multispectral chemical sensing, among others. For this purpose, integrated photonics is particularly promising owing to its compactness, mass fabrication, and energy-efficient characteristics. We present in this Letter, for the first time to the best of our knowledge, broadband integrated racetrack ring resonators operating within the crucial molecular fingerprint region. Devices show an operation bandwidth of Δλ≈900 nm with a central wavelength of λ≈8 µm, a quality factor of Q≈3200, and an extinction ratio of ER≈10 dB around the critical coupling condition. These resonant structures establish the basis of a new generation of integrated building blocks for long-wave infrared photonics that opens the route towards miniaturized multitarget molecule detection systems.

Integrated broadband dual-polarization Ge-rich SiGe mid-infrared Fourier-transform spectrometer.

Miniaturized on-chip spectrometers covering a wide band of the mid-infrared spectrum have an immense potential for multi-target detection in high-impact applications, such as chemical sensing or environmental monitoring. Specifically, multi-aperture spatial heterodyne Fourier-transform spectrometers (SHFTS) provide high throughput and improved tolerance against fabrication errors, compared to conventional counterparts. Still, state-of-the-art implementations have only shown single-polarization operation in narrow bandwidths within the near and short infrared. Here, we demonstrate the first, to the best of our knowledge, dual-polarization ultra-wideband SHFTS working beyond 5 µm wavelength. We exploit the unique flexibility in material engineering of the graded-index germanium-rich silicon-germanium (Ge-rich SiGe) photonic platform to implement a SHFTS that can be operated in an unprecedented range of 800 cm-1, showing experimental resolution better than 15 cm-1 for both orthogonal polarizations and free spectral range of 132 cm-1, in the wavelength range between 5 and 8.5 µm.

On-chip Bragg grating waveguides and Fabry-Perot resonators for long-wave infrared operation up to 8.4 µm.

Taking advantage of unique molecular absorption lines in the mid-infrared fingerprint region and of the atmosphere transparency window (3-5 µm and 8-14 µm), mid-infrared silicon photonics has attracted more research activities with a great potential for applications in different areas, including spectroscopy, remote sensing, free-space communication and many others. However, the demonstration of resonant structures operating at long-wave infrared wavelengths still remains challenging. Here, we demonstrate Bragg grating-based Fabry-Perot resonators based on Ge-rich SiGe waveguides with broadband operation in the mid-infrared. Bragg grating waveguides are investigated first at different wavelengths from 5.4 µm up to 8.4 µm, showing a rejection band up to 21 dB. Integrated Fabry-Perot resonators are then demonstrated for the first time in the 8 µm-wavelength range, showing Q-factors as high as 2200. This first demonstration of integrated mid-infrared Fabry-Perot resonators paves the way towards resonance-enhanced sensing circuits and non-linear based devices at these wavelengths.

Nonlinear Properties of Ge-rich Si1-xGex Materials with Different Ge Concentrations.

Silicon photonics is a large volume and large scale integration platform for applications from long-haul optical telecommunications to intra-chip interconnects. Extension to the mid-IR wavelength range is now largely investigated, mainly driven by absorption spectroscopy applications. Germanium (Ge) is particularly compelling as it has a broad transparency window up to 15 µm and a much higher third-order nonlinear coefficient than silicon which is very promising for the demonstration of efficient non-linear optics based active devices. Si1-xGex alloys have been recently studied due to their ability to fine-tune the bandgap and refractive index. The material nonlinearities are very sensitive to any modification of the energy bands, so Si1-xGex alloys are particularly interesting for nonlinear device engineering. We report on the first third order nonlinear experimental characterization of Ge-rich Si1-xGex waveguides, with Ge concentrations x ranging from 0.7 to 0.9. The characterization performed at 1580 nm is compared with theoretical models and a discussion about the prediction of the nonlinear properties in the mid-IR is introduced. These results will provide helpful insights to assist the design of nonlinear integrated optical based devices in both the near- and mid-IR wavelength ranges.

Ultra-wideband Ge-rich silicon germanium integrated Mach-Zehnder interferometer for mid-infrared spectroscopy.

This Letter explores the use of Ge-rich Si0.2Ge0.8 waveguides on graded Si1-xGex substrate for the demonstration of ultra-wideband photonic integrated circuits in the mid-infrared (mid-IR) wavelength range. We designed, fabricated, and characterized broadband Mach-Zehnder interferometers fully covering a range of 3 µm in the mid-IR band. The fabricated devices operate indistinctly in quasi-TE and quasi-TM polarizations, and have an extinction ratio higher than 10 dB over the entire operating wavelength range. The obtained results are in good correlation with theoretical predictions, while numerical simulations indicate that the device bandwidth can reach one octave with low additional losses. This Letter paves the way for further realization of mid-IR integrated spectrometers using low-index-contrast Si1-xGex waveguides with high germanium concentration.

Low-loss Ge-rich Si0.2Ge0.8 waveguides for mid-infrared photonics.

We demonstrate low-loss Ge-rich Si0.2Ge0.8 waveguides on Si1-xGex (x from 0 to 0.79) graded substrates operating in the mid-infrared wavelength range at λ=4.6 µm. Propagation losses as low as (1.5±0.5)dB/cm and (2±0.5)dB/cm were measured for the quasi-TE and quasi-TM polarizations, respectively. A total coupling loss (input/output) of only 10 dB was found for waveguide widths larger than 7 µm due to a good fiber-waveguide mode matching. Near-field optical mode profiles measured at the output waveguide facet allowed us to inspect the optical mode and precisely measure the modal effective area of each waveguide providing a good correlation between experiments and simulations. These results put forward the potential of low-index-contrast Si1-xGex waveguides with high Ge concentration as fundamental blocks for mid-infrared photonic integrated circuits.

Amorphous sub-nanometre Tb-doped SiO(x)N(y)/SiO2 superlattices for optoelectronics.

Amorphous sub-nanometre Tb-doped SiOxNy/SiO2 superlattices were fabricated by means of alternating deposition of 0.7 nm thick Tb-doped SiOxNy layers and of 0.9 nm thick SiO2 barrier layers in an electron-cyclotron-resonance plasma enhanced chemical vapour deposition system with in situ Tb-doping capability. High resolution transmission electron microscopy images showed a well-preserved superlattice morphology after annealing at a high temperature of 1000 °C. In addition, transparent indium tin oxide (ITO) electrodes were deposited by electron beam evaporation using a shadow mask approach to allow for the optoelectronic characterization of superlattices. Tb(3+) luminescent spectral features were obtained using three different excitation sources: UV laser excitation (photoluminescence (PL)), under a bias voltage (electroluminescence (EL)) and under a highly energetic electron beam (cathodoluminescence (CL)). All techniques displayed Tb(3+) inner transitions belonging to (5)D4 levels except for the CL spectrum, in which (5)D3 transition levels were also observed. Two competing mechanisms were proposed to explain the spectral differences observed between PL (or EL) and CL excitation: the population rate of the (5)D3 state and the non-radiative relaxation rate of the (5)D3-(5)D4 transition due to a resonant OH-mode. Moreover, the large number of interfaces (trapping sites) that electrons have to get through was identified as the main reason for observing a bulk-limited charge transport mechanism governed by Poole-Frenkel conduction in the J-V characteristic. Finally, a linear EL-J dependence was measured, with independent spectral shape and an EL onset voltage as low as 6.7 V. These amorphous sub-nanometre superlattices are meant to provide low-cost solutions in different areas including sensing, photovoltaics or photonics.

Structural and compositional properties of Er-doped silicon nanoclusters/oxides for multilayered photonic devices studied by STEM-EELS.

High resolution scanning transmission electron microscopy with an aberration corrected and monochromated instrument has been used for the assessment of the silicon-based active layer stack for novel optoelectronic devices. This layer contains a multilayer structure consisting of alternate thin layers of pure silica (SiO2) and silicon-rich silicon oxide (SRO, SiOx). Upon high temperature annealing the SRO sublayer segregates into a Si nanocluster (Si-nc) precipitated phase and a SiO2 matrix. Additionally, erbium (Er) ions have been implanted and used as luminescent centres in order to obtain narrow emission at 1.54 µm. Our study exploits the combination of high angle annular dark field (HAADF) imaging with a sub-nanometer electron probe and electron energy loss spectroscopy (EELS) with an energy resolution below 0.2 eV. The structural and chemical information is obtained from the studied multilayer structure. In addition, the instrumental techniques for calibration, deconvolution, fitting and analysis of the EELS spectra are explained in detail. The spatial distribution of the Si-nanoclusters (Si-ncs) and the SiO2 barriers is accurately delimited in the multilayer. Additionally, the quality of the studied multilayer in terms of composition, roughness and defects is analysed and discussed. Er clusterization has not been observed; even so, blue-shifted plasmon and interband transition energies for silica are measured, in the presence of Er ions and sizable nanometer-size effects.