Printed Electronics Based on 2D Material Inks: Preparation, Properties, and Applications toward Memristors.

Printed electronics, which fabricate electrical components and circuits on various substrates by leveraging functional inks and advanced printing technologies, have recently attracted tremendous attention due to their capability of large-scale, high-speed, and cost-effective manufacturing and also their great potential in flexible and wearable devices. To further achieve multifunctional, practical, and commercial applications, various printing technologies toward smarter pattern-design, higher resolution, greater production flexibility, and novel ink formulations toward multi-functionalities and high quality have been insensitively investigated. 2D materials, possessing atomically thin thickness, unique properties and excellent solution-processable ability, hold great potential for high-quality inks. Besides, the great variety of 2D materials ranging from metals, semiconductors to insulators offers great freedom to formulate versatile inks to construct various printed electronics. Here, a detailed review of the progress on 2D material inks formulation and its printed applications has been provided, specifically with an emphasis on emerging printed memristors. Finally, the challenges facing the field and prospects of 2D material inks and printed electronics are discussed.

Synthesis of Rhenium-Doped Molybdenum Sulfide by Atmospheric Pressure Chemical Vapor Deposition (CVD) for a High-Performance Photodetector.

Two-dimensional layered materials have attracted tremendous attention as photodetectors due to their fascinating features, including comprehensive coverage of band gaps, high potential in new-generation electronic devices, mechanical flexibility, and sensitive light-mass interaction. Currently, graphene and transition-metal dichalcogenides (TMDCs) are the most attractive active materials for constructing photodetectors. A growing number of emerging TMDCs applied in photodetectors bring up opportunities in the direct band gap independence with thickness. This study demonstrated for the first time a photodetector based on a few-layer Re x Mo1-x S2, which was grown by chemical vapor deposition (CVD) under atmospheric pressure. The detailed material characterizations were performed using Raman spectroscopy, photoluminescence, and X-ray photoelectron spectroscopy (XPS) on an as-grown few-layer Re x Mo1-x S2. The results show that both MoS2 and ReS2 peaks appear in the Re x Mo1-x S2 Raman diagram. Re x Mo1-x S2 is observed to emit light at a wavelength of 716.8 nm. The electronic band structure of the few layers of Re x Mo1-x S2 calculated using the first-principles theory suggests that the band gap of Re x Mo1-x S2 is larger than that of ReS2 and smaller than that of MoS2, which is consistent with the photoluminescence results. The thermal stability of the few layers of Re x Mo1-x S2 was evaluated using Raman temperature measurements. It is found that the thermal stability of Re x Mo1-x S2 is close to those of pure ReS2 and MoS2. The fabricated Re x Mo1-x S2 photodetector shows a high response rate of 7.46 A W-1 under 365 nm illumination, offering a competitive performance to the devices based on TMDCs and graphenes. This study unambiguously distinguishes Re x Mo1-x S2 as a future candidate in electronics and optoelectronics.

Fabrication of a Mesoporous Multimetallic Oxide-based Ion-Sensitive Field Effect Transistor for pH Sensing.

Sensitive and reliable noninvasive sensors are in demand to cope with an increasing need for robust working conditions and fast results. One of the leading potential technologies is field-effect transistor (FET)-based sensors to improve response time, sensitivity, and stability. Here, a sol-gel method fabricates an ion-sensitive field-effect transistor with a high current and output sensitivity for electrochemical sensing, solving binary device design, component regulating, and long-term stability, while maintaining the promoted sensitivity. Metal oxide-based devices with single and binary contents are fabricated and characterized for monitoring pH changes, with performance fitted to a Nernst-Poisson model. After detecting the performance, the result was compared with devices in different components and ratios to obtain excellent performance and high stability. In addition, these extended gate FETs with multimetallic oxide promise efficiency and stability optimization in terms of a flexible component design, demonstrating the feasibility of the novel sol-gel fabrication method to achieve efficient and reliable FET sensors.

Phase Transitions and Water Splitting Applications of 2D Transition Metal Dichalcogenides and Metal Phosphorous Trichalcogenides.

2D layered materials turn out to be the most attractive hotspot in materials for their unique physical and chemical properties. A special class of 2D layered material refers to materials exhibiting phase transition based on environment variables. Among these materials, transition metal dichalcogenides (TMDs) act as a promising alternative for their unique combination of atomic-scale thickness, direct bandgap, significant spin-orbit coupling and prominent electronic and mechanical properties, enabling them to be applied for fundamental studies as catalyst materials. Metal phosphorous trichalcogenides (MPTs), as another potential catalytic 2D phase transition material, have been employed for their unusual intercalation behavior and electrochemical properties, which act as a secondary electrode in lithium batteries. The preparation of 2D TMD and MPT materials has been extensively conducted by engineering their intrinsic structures at the atomic scale. In this study, advanced synthesis methods of preparing 2D TMD and MPT materials are tested, and their properties are investigated, with stress placed on their phase transition. The surge of this type of report is associated with water-splitting catalysis and other catalytic purposes. This study aims to be a guideline to explore the mentioned 2D TMD and MPT materials for their catalytic applications.

Multimetallic Oxynitrides Nanoparticles for a New Generation of Photocatalysts.

A versatile synthetic strategy for the preparation of multimetallic oxynitrides has been designed and here exemplarily discussed considering the preparation of nanoscaled zinc-gallium oxynitrides and zinc-gallium-indium oxynitrides, two important photocatalysts of new generation, which proved to be active in key energy related processes from pollutant decomposition to overall water splitting. The synthesis presented here allows the preparation of small nanoparticles (less than 20 nm in average diameter), well-defined in size and shape, yet highly crystalline and with the highest surface area reported so far (up to 80 m2 g-1 ). X-ray diffraction studies show that the final material is not a mixture of single oxides but a distinctive compound. The photocatalytic properties of the oxynitrides have been tested towards the decomposition of an organic dye (as a model reaction for the decomposition of air pollutants), showing better photocatalytic performances than the corresponding pure phases (reaction constant 0.22 h-1 ), whereas almost no reaction was observed in absence of catalyst or in the dark. The photocatalysts have been also tested for H2 evolution (semi-reaction of the water splitting process) with results comparable to the best literature values but leaving room for further improvement.

High Efficiency Organic Solar Cells Achieved by the Simultaneous Plasmon-Optical and Plasmon-Electrical Effects from Plasmonic Asymmetric Modes of Gold Nanostars.

The plasmon-optical effects have been utilized to optically enhance active layer absorption in organic solar cells (OSCs). The exploited plasmonic resonances of metal nanomaterials are typically from the fundamental dipole/high-order modes with narrow spectral widths for regional OSC absorption improvement. The conventional broadband absorption enhancement (using plasmonic effects) needs linear-superposition of plasmonic resonances. In this work, through strategic incorporation of gold nanostars (Au NSs) in between hole transport layer (HTL) and active layer, the excited plasmonic asymmetric modes offer a new approach toward broadband enhancement. Remarkably, the improvement is explained by energy transfer of plasmonic asymmetric modes of Au NS. In more detail, after incorporation of Au NSs, the optical power in electron transport layer transfers to active layer for improving OSC absorption, which otherwise will become dissipation or leakage as the role of carrier transport layer is not for photon-absorption induced carrier generation. Moreover, Au NSs simultaneously deliver plasmon-electrical effects which shorten transport path length of the typically low-mobility holes and lengthen that of high-mobility electrons for better balanced carrier collection. Meanwhile, the resistance of HTL is reduced by Au NSs. Consequently, power conversion efficiency of 10.5% has been achieved through cooperatively plasmon-optical and plasmon-electrical effects of Au NSs.