CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology.

After more than five decades, Moore's Law for transistors is approaching the end of the international technology roadmap of semiconductors (ITRS). The fate of complementary metal oxide semiconductor (CMOS) architecture has become increasingly unknown. In this era, 3D transistors in the form of gate-all-around (GAA) transistors are being considered as an excellent solution to scaling down beyond the 5 nm technology node, which solves the difficulties of carrier transport in the channel region which are mainly rooted in short channel effects (SCEs). In parallel to Moore, during the last two decades, transistors with a fully depleted SOI (FDSOI) design have also been processed for low-power electronics. Among all the possible designs, there are also tunneling field-effect transistors (TFETs), which offer very low power consumption and decent electrical characteristics. This review article presents new transistor designs, along with the integration of electronics and photonics, simulation methods, and continuation of CMOS process technology to the 5 nm technology node and beyond. The content highlights the innovative methods, challenges, and difficulties in device processing and design, as well as how to apply suitable metrology techniques as a tool to find out the imperfections and lattice distortions, strain status, and composition in the device structures.

Wideband low-RCS and gain-enhanced antenna using frequency selective absorber based on patterned graphene.

In this paper, a double-layer patterned graphene-based frequency-selective absorber (DGFSA) is proposed as a means of reducing an antenna's radar cross-section (RCS) while simultaneously increasing its gain. The antenna consists of a patch antenna with Multi-Graphene Frequency Selective Absorber (MGFSA) mounted on top. The DGFSA consists of double-layer patterned graphene and a band-pass frequency selective surface (FSS). Two patterned graphene lossy layers with different square resistances are used, which broaden the electromagnetic (EM) wave absorption bandwidth of the DGFSA, thus greatly reducing the out-band monostatic RCSs of the patch antenna. Meanwhile, due to the quasi-Fabry-Perot (F-P) effect, the gain of the proposed antenna is enhanced by 2.4 dB. Additionally, the low-RCS antenna reduces the monostatic RCS from 1.32 to 17 GHz under y-polarization and from 1.4 to 16.8 GHz under x-polarization, respectively. Furthermore, a decrease in the bistatic RCS is accomplished. Results from simulations and measurements match up nicely, which means the antenna we proposed has a good application on the stealth platform.

Interface Investigation on SiGe/Si Multilayer Structures: Influence of Different Epitaxial Process Conditions.

SiGe/Si multilayer is the core structure of the active area of gate-all-around field-effect transistors and semiconductor quantum computing devices. In this paper, high-quality SiGe/Si multilayers have been grown by a reduced-pressure chemical vapor deposition system. The effects of temperature, pressure, interface processing (dichlorosilane (SiH2Cl2, DCS) and hydrogen chloride (HCl)) on improving the transition thickness of SiGe to Si interfaces were investigated. The interface quality was characterized by transmission electron microscopy/atomic force microscopy/high-resolution X-ray diffraction methods. It was observed that limiting the migration of Ge atoms in the interface was critical for optimizing a sharp interface, and the addition of DCS was found to decrease the interface transition thickness. The change of the interfacial transition layer is not significant in the short treatment time of HCl. When the processing time of HCl is increased, the internal interface is optimized to a certain extent but the corresponding film thickness is also reduced. This study provides technical support for the acquisition of an abrupt interface and will have a very favorable influence on the performance improvement of miniaturized devices in the future.

An S-band multimode reflector antenna for a satellite constellation tracking system.

A multimode reflector antenna is a new concept proposed by our team in recent years, which does not correspond to the use of the traditional multimode feed but to innovation in the reflector design. This paper presents an S-band multimode reflector antenna based on multimode reflector theory. To achieve a flat-top beam shape, the main reflector of the antenna is divided into a middle region and an edge region. The height difference between them is approximately λ0/4, and then, the reflected waves in different areas partially cancel out in the direction of maximum radiation. The voltage standing wave ratio of the antenna is less than 1.5 from 2.8 to 3.4 GHz (19.4%), and the gain is more than 29.2 dB in the same frequency band. At the same time, a good flat-top beam is achieved in the range of ± 2°. The antenna can be used for satellite constellation tracking and other systems that require high-gain flat-top beams.

Undoped Strained Ge Quantum Well with Ultrahigh Mobility of Two Million.

We develop a method to fabricate an undoped Ge quantum well (QW) under a 32 nm relaxed Si0.2Ge0.8 shallow barrier. The bottom barrier contains Si0.2Ge0.8 (650 °C) and Si0.1Ge0.9 (800 °C) such that variation of Ge content forms a sharp interface that can suppress the threading dislocation density (TDD) penetrating into the undoped Ge quantum well. The SiGe barrier introduces enough in-plane parallel strain (ε∥ strain -0.41%) in the Ge quantum well. The heterostructure field-effect transistors with a shallow buried channel obtain an ultrahigh two-dimensional hole gas (2DHG) mobility over 2 × 106 cm2/(V s) and a very low percolation density of (5.689 ± 0.062) × 1010 cm-2. The fractional indication is also observed at high density and high magnetic fields. This strained germanium as a noise mitigation material provides a platform for integration of quantum computation with a long coherence time and fast all-electrical manipulation.

Growth and Strain Modulation of GeSn Alloys for Photonic and Electronic Applications.

GeSn materials have attracted considerable attention for their tunable band structures and high carrier mobilities, which serve well for future photonic and electronic applications. This research presents a novel method to incorporate Sn content as high as 18% into GeSn layers grown at 285-320 °C by using SnCl4 and GeH4 precursors. A series of characterizations were performed to study the material quality, strain, surface roughness, and optical properties of GeSn layers. The Sn content could be calculated using lattice mismatch parameters provided by X-ray analysis. The strain in GeSn layers was modulated from fully strained to partially strained by etching Ge buffer into Ge/GeSn heterostructures . In this study, two categories of samples were prepared when the Ge buffer was either laterally etched onto Si wafers, or vertically etched Ge/GeSnOI wafers which bonded to the oxide. In the latter case, the Ge buffer was initially etched step-by-step for the strain relaxation study. Meanwhile, the Ge/GeSn heterostructure in the first group of samples was patterned into the form of micro-disks. The Ge buffer was selectively etched by using a CF4/O2 gas mixture using a plasma etch tool. Fully or partially relaxed GeSn micro-disks showed photoluminescence (PL) at room temperature. PL results showed that red-shift was clearly observed from the GeSn micro-disk structure, indicating that the compressive strain in the as-grown GeSn material was partially released. Our results pave the path for the growth of high quality GeSn layers with high Sn content, in addition to methods for modulating the strain for lasing and detection of short-wavelength infrared at room temperature.

Study on preparation and controlled release in vitro of bergenin-amino polylactic acid polymer.

The efficacy of traditional tablets, drop pills and soft capsules of bergenin is far lower than expected. Therefore, bergenin was modified in this paper to connect with amino polylactic acid, a kind of biodegradable material, for chemical immobilization. The bergenin-amino PLA thus obtained was controllable with small molecular weight and excellent thermal stability. Its release in vitro could be extended with the increase in molecular weight. According to tests of biological compatibility and anti-tumor in vitro, bergenin-amino PLA at a proportion of 1 to 100 was characterized by better biological compatibility and lower cytotoxicity than control group at a concentration of 0.4 µ g/m L. The chemical immobilization of bergenin not only provides patients with an excellent way of drug administration but lays a good foundation for sustained drug release.

Accurate Device-Free Tracking Using Inexpensive RFIDs.

Without requiring targets to carry any device, device-free-based tracking is playing an important role in many emerging applications such as smart homes, fitness tracking, intruder detection, etc. While promising, current device-free tracking systems based on inexpensive commercial devices perform well in the training environment, but poorly in other environments because of different multipath reflections. This paper introduces RDTrack, a system that leverages changes in Doppler shifts, which are not sensitive to multipath, to accurately track the target. Moreover, RDTrack identifies particular patterns for fine-grained motions such as turning, walking straightly, etc., which can achieve accurate tracking. For the purpose of achieving a fine-grained device-free tracking system, this paper builds a trajectory estimating model using HMM (Hidden Markov Model) to improve the matching accuracy and reduce the time complexity. We address several challenges including estimating the tag influenced time period, identifying moving path and reducing false positives due to multipath. We implement RDTrack with inexpensive commercial off-the-shelf RFID (Radio Frequency IDentification) hardware and extensively evaluate RDTrack in a lobby, staircase and library. Our results show that RDTrack is effective in tracking the moving target, with a low tracking error of 32 cm. This accuracy is robust for different environments, highlighting RDTrack's ability to enable future essential device-free moving-based interaction with RFID devices.

High-rate nitrogen removal and microbial community of an up-flow anammox reactor with ceramics as biomass carrier.

Nitrogen removal performance and responsible microbial community of anammox process at low temperatures, and long term effect of dissolved oxygen (DO) on the performance of anammox process were investigated in a biofilm reactor, which was operated at 33±1°C (159d) and 20±2°C (162d) with an influent DO concentration of 0.7-1.5mgL(-1). Nitrogen removal recovered to 70% after 2wk with the temperature drastically decreasing from 33±1°C to 20±2°C. At 20±2°C, the average effluent (NH4(+)-N+NO2(-)-N) concentration was 0.08±0.08mgL(-1) at a hydraulic retention time of 1.5h. A total nitrogen removal efficiency of the reactor of 1.0gNL(-1)d(-1) was obtained for up to one month while the nitrogen loading rate was 1.16gNL(-1)d(-1). Results of T-RFLP and 16S rRNA phylogenic analysis revealed that Candidatus Jettenia asiatica, as confirmed to adapt to low temperature, was considered to be responsible for the stable and high nitrogen removal performance.

Distribution and genetic diversity of the microorganisms in the biofilter for the simultaneous removal of arsenic, iron and manganese from simulated groundwater.

A biofilter was developed in this study, which showed an excellent performance with the simultaneous removal of AsIII from 150 to 10mg L(-1) during biological iron and manganese oxidation. The distribution and genetic diversity of the microorganisms along the depth of the biofilter have been investigated using DGGE. Results suggested that Iron oxidizing bacteria (IOB, such as Gallionella, Leptothrix), Manganese oxidizing bacteria (MnOB, such as Leptothrix, Pseudomonas, Hyphomicrobium, Arthrobacter) and AsIII-oxidizing bacteria (AsOB, such as Alcaligenes, Pseudomonas) are dominant in the biofilter. The spatial distribution of IOB, MnOB and AsOB at different depths of the biofilter determined the removal zone of FeII, MnII and AsIII, which site at the depths of 20, 60 and 60cm, respectively, and the corresponding removal efficiencies were 86%, 84% and 87%, respectively. This process shows great potential to the treatment of groundwater contaminated with iron, manganese and arsenic due to its stable performance and significant cost-savings.

[Influence of alkalinity and DO on ANAMMOX bioreactor at normal temperature and low substrate concentration].

A lab-scale up-flow ANAMMOX bioreactor with ceramics as biomass carrier was started up. The influence of alkalinity and dissolved oxygen on ANAMMOX reaction at normal temperature and low substrate concentration was investigated. The results showed that, at (20 ± 2) degrees C and an HRT of 3 h, when the alkalinity was between 44 mg x L(-1) and 350 mg x L(-1), the ammonia removal efficiency was decreased from 97.2% to 75.6% and the TN removal efficiency was decreased from 89.7% to 75.1% as the alkalinity reduced. Meanwhile, the nitrite removal efficiency was stabilized at 99.7%. When the alkalinity was 0 mg x L(-1), the effluent nitrite concentration was increased to 4.9 mg x L(-1). Ammonia removal efficiency was decreased by 12.3% because of light. When the HRT was 1.5 h, the DO value was < 3 mg x L(-1), the average removal efficiencies of ammonia and nitrite were 99.7% and 100%, respectively, the nitrogen removal rate was 1.0 kg x (m3 x d)(-1). 16S rRNA phylogenic analysis was applied to analyze the microbial community structure. Results revealed that Candidatus Jettenia asiatica and Candidatus Brocadia sp. were adapted to normal temperature.