Hot-electron dynamics in quantum dots manipulated by spin-exchange Auger interactions.

The ability to effectively manipulate non-equilibrium 'hot' carriers could enable novel schemes for highly efficient energy harvesting and interconversion. In the case of semiconductor materials, realization of such hot-carrier schemes is complicated by extremely fast intraband cooling (picosecond to subpicosecond time scales) due to processes such as phonon emission. Here we show that using magnetically doped colloidal semiconductor quantum dots we can achieve extremely fast rates of spin-exchange processes that allow for 'uphill' energy transfer with an energy-gain rate that greatly exceeds the intraband cooling rate. This represents a dramatic departure from the usual situation where energy-dissipation via phonon emission outpaces energy gains due to standard Auger-type energy transfer at least by a factor of three. A highly favourable energy gain/loss rate ratio realized in magnetically doped quantum dots can enable effective schemes for capturing kinetic energy of hot, unrelaxed carriers via processes such as spin-exchange-mediated carrier multiplication and upconversion, hot-carrier extraction and electron photoemission.

Quantum Dot Thin-Films as Rugged, High-Performance Photocathodes.

Typical use of colloidal quantum dots (QDs) as bright, tunable phosphors in real applications relies on engineering of their surfaces to suppress the loss of excited carriers to surface trap states or to the surrounding medium. Here, we explore the utility of QDs in an application that actually exploits their propensity toward photoionization, namely within efficient and robust photocathodes for use in next-generation electron guns. In order to establish the relevance of QD films as photocathodes, we evaluate the efficiency of electron photoemission of films of a variety of compositions in a typical electron gun configuration. By quantifying photocurrent as a function of excitation photon energy, excitation intensity and pulse duration, we establish the role of hot electrons in photoemission within the multiphoton excitation regime. We also demonstrate the effect of QD structure and film deposition methods on efficiency, which suggests numerous pathways for further enhancements. Finally, we show that QD photocathodes offer superior efficiencies relative to standard copper cathodes and are robust against degradation under ambient conditions.

Auger Up-Conversion of Low-Intensity Infrared Light in Engineered Quantum Dots.

One source of efficiency losses in photovoltaic cells is their transparency toward solar photons with energies below the band gap of the absorbing layer. This loss can be reduced using a process of up-conversion whereby two or more sub-band-gap photons generate a single above-gap exciton. Traditional approaches to up-conversion, such as nonlinear two-photon absorption (2PA) or triplet fusion, suffer from low efficiency at solar light intensities, a narrow absorption bandwidth, nonoptimal absorption energies, and difficulties for implementing in practical devices. Here we show that these deficiencies can be alleviated using the effect of Auger up-conversion in thick-shell PbSe/CdSe quantum dots. This process relies on Auger recombination whereby two low-energy, core-based excitons are converted into a single higher-energy, shell-based exciton. Compared to their monocomponent counterparts, the tailored PbSe/CdSe heterostructures feature enhanced absorption cross-sections, a higher efficiency of the "productive" Auger pathway involving re-excitation of a hole, and longer lifetimes of both core- and shell-localized excitons. These features lead to effective up-conversion cross-sections that are more than 6 orders of magnitude higher than for standard nonlinear 2PA, which allows for efficient up-conversion of continuous wave infrared light at intensities as low as a few watts per square centimeter.

Mn2+-Doped Lead Halide Perovskite Nanocrystals with Dual-Color Emission Controlled by Halide Content.

Impurity doping has been widely used to endow semiconductor nanocrystals with novel optical, electronic, and magnetic functionalities. Here, we introduce a new family of doped NCs offering unique insights into the chemical mechanism of doping, as well as into the fundamental interactions between the dopant and the semiconductor host. Specifically, by elucidating the role of relative bond strengths within the precursor and the host lattice, we develop an effective approach for incorporating manganese (Mn) ions into nanocrystals of lead-halide perovskites (CsPbX3, where X = Cl, Br, or I). In a key enabling step not possible in, for example, II-VI nanocrystals, we use gentle chemical means to finely and reversibly tune the nanocrystal band gap over a wide range of energies (1.8-3.1 eV) via postsynthetic anion exchange. We observe a dramatic effect of halide identity on relative intensities of intrinsic band-edge and Mn emission bands, which we ascribe to the influence of the energy difference between the corresponding transitions on the characteristics of energy transfer between the Mn ion and the semiconductor host.

Phonon-assisted nonlinear optical processes in ultrashort-pulse pumped optical parametric amplifiers.

Optically active phonon modes in ferroelectrics such as potassium titanyl phosphate (KTP) and potassium titanyl arsenate (KTA) in the ~7-20 THz range play an important role in applications of these materials in Raman lasing and terahertz wave generation. Previous studies with picosecond pulse excitation demonstrated that the interaction of pump pulses with phonons can lead to efficient stimulated Raman scattering (SRS) accompanying optical parametric oscillation or amplification processes (OPO/OPA), and to efficient polariton-phonon scattering. In this work, we investigate the behavior of infrared OPAs employing KTP or KTA crystals when pumped with ~800-nm ultrashort pulses of duration comparable to the oscillation period of the optical phonons. We demonstrate that under conditions of coherent impulsive Raman excitation of the phonons, when the effective χ((2)) nonlinearity cannot be considered instantaneous, the parametrically amplified waves (most notably, signal) undergo significant spectral modulations leading to an overall redshift of the OPA output. The pump intensity dependence of the redshifted OPA output, the temporal evolution of the parametric gain, as well as the pump spectral modulations suggest the presence of coupling between the nonlinear optical polarizations P(NL) of the impulsively excited phonons and those of parametrically amplified waves.

Spectral and Dynamical Properties of Single Excitons, Biexcitons, and Trions in Cesium-Lead-Halide Perovskite Quantum Dots.

Organic-inorganic lead-halide perovskites have been the subject of recent intense interest due to their unusually strong photovoltaic performance. A new addition to the perovskite family is all-inorganic Cs-Pb-halide perovskite nanocrystals, or quantum dots, fabricated via a moderate-temperature colloidal synthesis. While being only recently introduced to the research community, these nanomaterials have already shown promise for a range of applications from color-converting phosphors and light-emitting diodes to lasers, and even room-temperature single-photon sources. Knowledge of the optical properties of perovskite quantum dots still remains vastly incomplete. Here we apply various time-resolved spectroscopic techniques to conduct a comprehensive study of spectral and dynamical characteristics of single- and multiexciton states in CsPbX3 nanocrystals with X being either Br, I, or their mixture. Specifically, we measure exciton radiative lifetimes, absorption cross-sections, and derive the degeneracies of the band-edge electron and hole states. We also characterize the rates of intraband cooling and nonradiative Auger recombination and evaluate the strength of exciton-exciton coupling. The overall conclusion of this work is that spectroscopic properties of Cs-Pb-halide quantum dots are largely similar to those of quantum dots of more traditional semiconductors such as CdSe and PbSe. At the same time, we observe some distinctions including, for example, an appreciable effect of the halide identity on radiative lifetimes, considerably shorter biexciton Auger lifetimes, and apparent deviation of their size dependence from the "universal volume scaling" previously observed for many traditional nanocrystal systems. The high efficiency of Auger decay in perovskite quantum dots is detrimental to their prospective applications in light-emitting devices and lasers. This points toward the need for the development of approaches for effective suppression of Auger recombination in these nanomaterials, using perhaps insights gained from previous studies of II-VI nanocrystals.

Temperature and magnetic-field dependence of radiative decay in colloidal germanium quantum dots.

We conduct spectroscopic and theoretical studies of photoluminescence (PL) from Ge quantum dots (QDs) fabricated via colloidal synthesis. The dynamics of late-time PL exhibit a pronounced dependence on temperature and applied magnetic field, which can be explained by radiative decay involving two closely spaced, slowly emitting exciton states. In 3.5 nm QDs, these states are separated by ∼1 meV and are characterized by ∼82 µs and ∼18 µs lifetimes. By using a four-band formalism, we calculate the fine structure of the indirect band-edge exciton arising from the electron-hole exchange interaction and the Coulomb interaction of the Γ-point hole with the anisotropic charge density of the L-point electron. The calculations suggest that the observed PL dynamics can be explained by phonon-assisted recombination of excitons thermally distributed between the lower-energy "dark" state with the momentum projection J = ± 2 and a higher energy "bright" state with J = ± 1. A fairly small difference between lifetimes of these states is due to their mixing induced by the exchange term unique to crystals with a highly symmetric cubic lattice such as Ge.

Enhanced carrier multiplication in engineered quasi-type-II quantum dots.

One process limiting the performance of solar cells is rapid cooling (thermalization) of hot carriers generated by higher-energy solar photons. In principle, the thermalization losses can be reduced by converting the kinetic energy of energetic carriers into additional electron-hole pairs via carrier multiplication (CM). While being inefficient in bulk semiconductors this process is enhanced in quantum dots, although not sufficiently high to considerably boost the power output of practical devices. Here we demonstrate that thick-shell PbSe/CdSe nanostructures can show almost a fourfold increase in the CM yield over conventional PbSe quantum dots, accompanied by a considerable reduction of the CM threshold. These structures enhance a valence-band CM channel due to effective capture of energetic holes into long-lived shell-localized states. The attainment of the regime of slowed cooling responsible for CM enhancement is indicated by the development of shell-related emission in the visible observed simultaneously with infrared emission from the core.

Photocharging Artifacts in Measurements of Electron Transfer in Quantum-Dot-Sensitized Mesoporous Titania Films.

Transient absorption and time-resolved photoluminescence measurements of high-performance mesoporous TiO2 photoanodes sensitized with CuInSexS2-x quantum dots reveal the importance of hole scavenging in the characterization of photoinduced electron transfer. The apparent characteristic time of this process strongly depends on the local environment of the quantum dot/TiO2 junction due to accumulation of long-lived positive charges in the quantum dots. The presence of long-lived photoexcited holes introduces artifacts due to fast positive-trion Auger decay (60 ps time constant), which can dominate electron dynamics and thus mask true electron transfer. We show that the presence of a redox electrolyte is critical to the accurate characterization of charge transfer, since it enables fast extraction of holes and helps maintain charge neutrality of the quantum dots. Although electron transfer is observed to be relatively slow (19 ns time constant), a high electron extraction efficiency (>95%) can be achieved because in well-passivated CuInSexS2-x quantum dots neutral excitons have significantly longer lifetimes of hundreds of nanoseconds.

Controlling the influence of Auger recombination on the performance of quantum-dot light-emitting diodes.

Development of light-emitting diodes (LEDs) based on colloidal quantum dots is driven by attractive properties of these fluorophores such as spectrally narrow, tunable emission and facile processibility via solution-based methods. A current obstacle towards improved LED performance is an incomplete understanding of the roles of extrinsic factors, such as non-radiative recombination at surface defects, versus intrinsic processes, such as multicarrier Auger recombination or electron-hole separation due to applied electric field. Here we address this problem with studies that correlate the excited state dynamics of structurally engineered quantum dots with their emissive performance within LEDs. We find that because of significant charging of quantum dots with extra electrons, Auger recombination greatly impacts both LED efficiency and the onset of efficiency roll-off at high currents. Further, we demonstrate two specific approaches for mitigating this problem using heterostructured quantum dots, either by suppressing Auger decay through the introduction of an intermediate alloyed layer, or by using an additional shell that impedes electron transfer into the quantum dot to help balance electron and hole injection.