Large supramolecular structures of 33-mer gliadin peptide activate toll-like receptors in macrophages.

Gliadin, an immunogenic protein present in wheat, is not fully degraded by humans and after the normal gastric and pancreatic digestion, the immunodominant 33-mer gliadin peptide remains unprocessed. The 33-mer gliadin peptide is found in human faeces and urine, proving not only its proteolytic resistance in vivo but more importantly its transport through the entire human body. Here, we demonstrate that 33-mer supramolecular structures larger than 220 nm induce the overexpression of nuclear factor kappa B (NF-κB) via a specific Toll-like Receptor (TLR) 2 and (TLR) 4 dependent pathway and the secretion of pro-inflammatory cytokines such as IP-10/CXCL10 and TNF-α. Using helium ion microscopy, we elucidated the initial stages of oligomerisation of 33-mer gliadin peptide, showing that rod-like oligomers are nucleation sites for protofilament formation. The relevance of the 33-mer supramolecular structures in the early stages of the disease is paving new perspectives in the understanding of gluten-related disorders.

Proximity-Induced Superconductivity and Quantum Interference in Topological Crystalline Insulator SnTe Thin-Film Devices.

Topological crystalline insulators represent a new state of matter, in which the electronic transport is governed by mirror-symmetry protected Dirac surface states. Due to the helical spin-polarization of these surface states, the proximity of topological crystalline matter to a nearby superconductor is predicted to induce unconventional superconductivity and, thus, to host Majorana physics. We report on the preparation and characterization of Nb-based superconducting quantum interference devices patterned on top of topological crystalline insulator SnTe thin films. The SnTe films show weak anti-localization, and the weak links of the superconducting quantum interference devices (SQUID) exhibit fully gapped proximity-induced superconductivity. Both properties give a coinciding coherence length of 120 nm. The SQUID oscillations induced by a magnetic field show 2π periodicity, possibly dominated by the bulk conductivity.

Tunnel Magnetoresistance Sensors with Magnetostrictive Electrodes: Strain Sensors.

Magnetostrictive tunnel magnetoresistance (TMR) sensors pose a bright perspective in micro- and nano-scale strain sensing technology. The behavior of TMR sensors under mechanical stress as well as their sensitivity to the applied stress depends on the magnetization configuration of magnetic tunnel junctions (MTJ)s with respect to the stress axis. Here, we propose a configuration resulting in an inverse effect on the tunnel resistance by tensile and compressive stresses. Numerical simulations, based on a modified Stoner-Wohlfarth (SW) model, are performed in order to understand the magnetization reversal of the sense layer and to find out the optimum bias magnetic field required for high strain sensitivity. At a bias field of -3.2 kA/m under a 0.2 × 10 - 3 strain, gauge factors of 2294 and -311 are calculated under tensile and compressive stresses, respectively. Modeling results are investigated experimentally on a round junction with a diameter of 30 ± 0.2 µ m using a four-point bending apparatus. The measured field and strain loops exhibit nearly the same trends as the calculated ones. Also, the gauge factors are in the same range. The junction exhibits gauge factors of 2150 ± 30 and -260 for tensile and compressive stresses, respectively, under a -3.2 kA/m bias magnetic field. The agreement of the experimental and modeling results approves the proposed configuration for high sensitivity and ability to detect both tensile and compressive stresses by a single TMR sensor.

A scanning probe microscope for magnetoresistive cantilevers utilizing a nested scanner design for large-area scans.

We describe an atomic force microscope (AFM) for the characterization of self-sensing tunneling magnetoresistive (TMR) cantilevers. Furthermore, we achieve a large scan-range with a nested scanner design of two independent piezo scanners: a small high resolution scanner with a scan range of 5 × 5 × 5 µm(3) is mounted on a large-area scanner with a scan range of 800 × 800 × 35 µm(3). In order to characterize TMR sensors on AFM cantilevers as deflection sensors, the AFM is equipped with a laser beam deflection setup to measure the deflection of the cantilevers independently. The instrument is based on a commercial AFM controller and capable to perform large-area scanning directly without stitching of images. Images obtained on different samples such as calibration standard, optical grating, EPROM chip, self-assembled monolayers and atomic step-edges of gold demonstrate the high stability of the nested scanner design and the performance of self-sensing TMR cantilevers.

On/off switching of bit readout in bias-enhanced tunnel magneto-Seebeck effect.

Thermoelectric effects in magnetic tunnel junctions are promising to serve as the basis for logic devices or memories in a "green" information technology. However, up to now the readout contrast achieved with Seebeck effects was magnitudes smaller compared to the well-established tunnel magnetoresistance effect. Here, we resolve this problem by demonstrating that the tunnel magneto-Seebeck effect (TMS) in CoFeB/MgO/CoFeB tunnel junctions can be switched on to a logic "1" state and off to "0" by simply changing the magnetic state of the CoFeB electrodes. This new functionality is achieved by combining a thermal gradient and an electric field. Our results show that the signal crosses zero and can be adjusted by tuning a bias voltage that is applied between the electrodes of the junction; hence, the name of the effect is bias-enhanced tunnel magneto-Seebeck effect (bTMS). Via the spin- and energy-dependent transmission of electrons in the junction, the bTMS effect can be configured using the bias voltage with much higher control than the tunnel magnetoresistance and even completely suppressed for only one magnetic configuration. Moreover, our measurements are a step towards the experimental realization of high TMS ratios without additional bias voltage, which are predicted for specific Co-Fe compositions.

Time-resolved measurement of the tunnel magneto-Seebeck effect in a single magnetic tunnel junction.

Recently, several groups have reported spin-dependent thermoelectric effects in magnetic tunnel junctions. In this paper, we present a setup for time-resolved measurements of thermovoltages and thermocurrents of a single micro- to nanometer-scaled tunnel junction. An electrically modulated diode laser is used to create a temperature gradient across the tunnel junction layer stack. This laser modulation technique enables the recording of time-dependent thermovoltage signals with a temporal resolution only limited by the preamplifier for the thermovoltage. So far, time-dependent thermovoltage could not be interpreted. Now, with the setup presented in this paper, it is possible to distinguish different Seebeck voltage contributions to the overall measured voltage signal in the µs time regime. A model circuit is developed that explains those voltage contributions on different sample types. Further, it will be shown that a voltage signal arising from the magnetic tunnel junction can only be observed when the laser spot is directly centered on top of the magnetic tunnel junction, which allows a lateral separation of the effects.

At-wavelength inspection of sub-40 nm defects in extreme ultraviolet lithography mask blank by photoemission electron microscopy.

A new at-wavelength inspection technology to probe nanoscale defects buried underneath Mo/Si multilayers on an extreme ultraviolet (EUV) lithography mask blank has been implemented using EUV photoemission electron microscopy (EUV-PEEM). EUV-PEEM images of programmed defect structures of various lateral and vertical sizes recorded at an ~13.5 nm wavelength show that 35 nm wide and 4 nm high buried line defects are clearly detectable. The imaging technique proves to be sensitive to small phase jumps, enhancing the edge visibility of the phase defects, which is explained in terms of a standing wave enhanced image contrast at resonant EUV illumination.