Employing PCBTDPP as an Efficient Donor Polymer for High Performance Ternary Polymer Solar Cells.

A compatible low-bandgap donor polymer (poly[N-90-heptadecanyl-2,7carbazole-alt-3,6-bis(thiophen-5-yl)-2,5-dioctyl-2,5-dihydropyrrolo [3,4] pyrrole-1,4-dione], PCBTDPP) was judicially introduced into the archetypal poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PC61BM) photoactive system to fabricate highly efficient ternary based bulk heterojunction polymer solar cells (PSCs). The PCBTDPP ternary-based PSC with optimal loading (0.2 wt.%) displayed outstanding performance with a champion power conversion efficiency (PCE) of 5.28% as compared to the PCE (4.67%) for P3HT:PC61BM-based PSC (reference). The improved PCE for PCBTDPP ternary-based PSC can be mainly attributed to the incorporation of PCBTDPP into P3HT:PC61BM that beneficially improved the optical, morphological, electronic, and photovoltaic (PV) performance. This work instills a rational strategy for identifying components (donor/acceptor (D/A) molecules) with complementary beneficial properties toward fabricating efficient ternary PSCs.

Localized Surface Plasmon Resonance-Mediated Charge Trapping/Detrapping for Core-Shell Nanorod-Based Optical Memory Cells.

For following the trend of miniaturization as per Moore's law, increasing efforts have been made to develop single devices with versatile functionalities for Internet of Things (IoT). In this work, organic optical memory devices with excellent dual optoelectronic functionality including light sensing and data storage have been proposed. The Au@Ag core-shell nanorods (NRs)-based memory device exhibits large memory window up to 19.7 V due to the well-controlled morphology of Au@Ag NRs with optimum size and concentration. Furthermore, since the extinction intensity of Au@Ag NRs gradually enhance with the increase in Ag shell thickness, the phototunable behaviors of memory device were systematically studied by varying the thickness of Ag shell. Multilevel data storage can be achieved with the light assistant. Finally, the simulation results demonstrate that the phototunable memory property is originated from the multimode localized surface plasmon resonance (LSPR) of Au@Ag NRs, which is in consistent with the experimental results. The Au@Ag core-shell NRs-based memories may open up a new strategy toward developing high-performance optoelectronic devices.

An Overview of the Development of Flexible Sensors.

Flexible sensors that efficiently detect various stimuli relevant to specific environmental or biological species have been extensively studied due to their great potential for the Internet of Things and wearable electronics applications. The application of flexible and stretchable electronics to device-engineering technologies has enabled the fabrication of slender, lightweight, stretchable, and foldable sensors. Here, recent studies on flexible sensors for biological analytes, ions, light, and pH are outlined. In addition, contemporary studies on device structure, materials, and fabrication methods for flexible sensors are discussed, and a market overview is provided. The conclusion presents challenges and perspectives in this field.

Photoinitiation and Inhibition under Monochromatic Green Light for Storage of Colored 3D Images in Holographic Polymer-Dispersed Liquid Crystals.

Holographic photopolymer composites have garnered a great deal of interest in recent decades, not only because of their advantageous light sensitivity but also due to their attractive capabilities of realizing high capacity three-dimensional (3D) data storage that is long-term stable within two-dimensional (2D) thin films. For achieving high performance holographic photopolymer composites, it is of critical importance to implement precisely spatiotemporal control over the photopolymerization kinetics and gelation during holographic recording. Though a monochromatic blue light photoinitibitor has been demonstrated to be useful for improving the holographic performance, it is impractical to be employed for constructing holograms under green light due to the severe restriction of the First Law of Photochemistry, while holography under green light is highly desirable considering the relatively low cost of laser source and high tolerance to ambient vibration for image reconstruction. Herein, we disclose the concurrent photoinitiation and inhibition functions of the rose bengal (RB)/N-phenylglycine (NPG) system upon green light illumination, which result in significant enhancement of the diffraction efficiency of holographic polymer-dispersed liquid crystal (HPDLC) gratings from zero up to 87.6 ± 1.3%, with an augmentation of the RB concentration from 0.06 × 10-3 to 9.41 × 10-3 mol L-1. Interestingly, no detectable variation of the ϕ1/2kp/kt1/2, which reflects the initiation efficiency and kinetic constants, is given when increasing the RB concentration. The radical inhibition by RBH• is believed to account for the greatly improved phase separation and enhanced diffraction efficiency, through shortening the weight-average polymer chain length and subsequently delaying the photopolymerization gelation. The reconstructed colored 3D images that are easily identifiable to the naked eye under white light demonstrate great potential to be applied for advanced anticounterfeiting.

Solution-Processed Rare-Earth Oxide Thin Films for Alternative Gate Dielectric Application.

Previous investigations on rare-earth oxides (REOs) reveal their high possibility as dielectric films in electronic devices, while complicated physical methods impede their developments and applications. Herein, we report a facile route to fabricate 16 REOs thin insulating films through a general solution process and their applications in low-voltage thin-film transistors as dielectrics. The formation and properties of REOs thin films are analyzed by atomic force microscopy (AFM), X-ray diffraction (XRD), spectroscopic ellipsometry, water contact angle measurement, X-ray photoemission spectroscopy (XPS), and electrical characterizations, respectively. Ultrasmooth, amorphous, and hydrophilic REO films with thickness around 10 nm have been obtained through a combined spin-coating and postannealing method. The compositional analysis results reveal the formation of RE hydrocarbonates on the surface and silicates at the interface of REOs films annealed on Si substrate. The dielectric properties of REO films are investigated by characterizing capacitors with a Si/Ln2O3/Au (Ln = La, Gd, and Er) structure. The observed low leakage current densities and large areal capacitances indicate these REO films can be employed as alternative gate dielectrics in transistors. Thus, we have successfully fabricated a series of low-voltage organic thin-film transistors based on such sol-gel derived REO films to demonstrate their application in electronics. The optimization of REOs dielectrics in transistors through further surface modification has also been studied. The current study provides a simple solution process approach to fabricate varieties of REOs insulating films, and the results reveal their promising applications as alternative gate dielectrics in thin-film transistors.

Ultrasound-Induced Organogel Formation Followed by Thin Film Fabrication via Simple Doctor Blading Technique for Field-Effect Transistor Applications.

We demonstrate doctor blading technique to fabricate high performance transistors made up of printed small molecular materials. In this regard, we synthesize a new soluble phthalocyanine, tetra-n-butyl peripheral substituted copper(II) phthalocaynine (CuBuPc), that can easily undergo gel formation upon ultrasonic irradiation, leading to the formation of three-dimensional (3D) network composed of one-dimensional (1D) nanofibers structure. Finally, taking the advantage of thixotropic nature of the CuBuPc organogel, we use the doctor blade processing technique that limits the material wastage for the fabrication of transistor devices. Due to the ultrasound induced stronger π-π interaction, the transistor fabricated by doctor blading based on CuBuPc organogel exhibits significant increase in charge carrier mobility in comparison with other solution process techniques, thus paving a way for a simple and economically viable preparation of electronic circuits.

Hybrid Flexible Resistive Random Access Memory-Gated Transistor for Novel Nonvolatile Data Storage.

Here, a single-device demonstration of novel hybrid architecture is reported to achieve programmable transistor nodes which have analogies to flash memory by incorporating a resistive switching random access memory (RRAM) device as a resistive switch gate for field effect transistor (FET) on a flexible substrate. A high performance flexible RRAM with a three-layered structure is fabricated by utilizing solution-processed MoS2 nanosheets sandwiched between poly(methyl methacrylate) polymer layers. Gate coupling with the pentacene-based transistor can be controlled by the RRAM memory state to produce a nonprogrammed state (inactive) and a programmed state (active) with a well-defined memory window. Compared to the reference flash memory device based on the MoS2 floating gate, the hybrid device presents robust access speed and retention ability. Furthermore, the hybrid RRAM-gated FET is used to build an integrated logic circuit and a wide logic window in inverter logic is achieved. The controllable, well-defined memory window, long retention time, and fast access speed of this novel hybrid device may open up new possibilities of realizing fully functional nonvolatile memory for high-performance flexible electronics.

Self-aligned, full solution process polymer field-effect transistor on flexible substrates.

Conventional techniques to form selective surface energy regions on rigid inorganic substrates are not suitable for polymer interfaces due to sensitive and soft limitation of intrinsic polymer properties. Therefore, there is a strong demand for finding a novel and compatible method for polymeric surface energy modification. Here, by employing the confined photo-catalytic oxidation method, we successfully demonstrate full polymer filed-effect transistors fabricated through four-step spin-coating process on a flexible polymer substrate. The approach shows negligible etching effect on polymeric film. Even more, the insulating property of polymeric dielectric is not affected by the method, which is vital for polymer electronics. Finally, the self-aligned full polymer field-effect transistors on the flexible polymeric substrate are fabricated, showing good electrical properties and mechanical flexibility under bending tests.

Photo-reactive charge trapping memory based on lanthanide complex.

Traditional utilization of photo-induced excitons is popularly but restricted in the fields of photovoltaic devices as well as photodetectors, and efforts on broadening its function have always been attempted. However, rare reports are available on organic field effect transistor (OFET) memory employing photo-induced charges. Here, we demonstrate an OFET memory containing a novel organic lanthanide complex Eu(tta)3ppta (Eu(tta)3 = Europium(III) thenoyltrifluoroacetonate, ppta = 2-phenyl-4,6-bis(pyrazol-1-yl)-1,3,5-triazine), in which the photo-induced charges can be successfully trapped and detrapped. The luminescent complex emits intense red emission upon ultraviolet (UV) light excitation and serves as a trapping element of holes injected from the pentacene semiconductor layer. Memory window can be significantly enlarged by light-assisted programming and erasing procedures, during which the photo-induced excitons in the semiconductor layer are separated by voltage bias. The enhancement of memory window is attributed to the increasing number of photo-induced excitons by the UV light. The charges are stored in this luminescent complex for at least 10(4) s after withdrawing voltage bias. The present study on photo-assisted novel memory may motivate the research on a new type of light tunable charge trapping photo-reactive memory devices.

Surface Decoration on Polymeric Gate Dielectrics for Flexible Organic Field-Effect Transistors via Hydroxylation and Subsequent Monolayer Self-Assembly.

A simple photochemical reaction based on confined photocatalytic oxidation (CPO) treatment and hydrolysis was employed to efficiently convert C-H bonds into C-OH groups on polymeric material surfaces, followed by investigation of monolayer self-assembly decoration on polymeric dielectrics via chemical bonding for the organic field-effect transistors (OFETs) applications. This method is a low temperature process and has negligible etching effect on polymeric dielectric layers. Various types of self-assembled monolayers have been tested and successfully attached onto the hydroxylated polymeric dielectric surfaces through chemical bonding, ensuring the stability of decorated functional films during the subsequent device fabrication consisting of solution processing of the polymer active layer. With the surface decoration of functional groups, both n-type and p-type polymers exhibit enhanced carrier mobilities in the unipolar OFETs. In addition, enhanced and balanced mobilities are obtained in the ambipolar OFETs with the blend of polymer semiconductors. The anchored self-assembled monolayers on the dielectric surfaces dramatically preclude the solvent effect, thus enabling an improvement of carrier mobility up to 2 orders of magnitude. Our study opens a way of targeted modifications of polymeric surfaces and related applications in organic electronics.

Two-dimensional molybdenum disulphide nanosheet-covered metal nanoparticle array as a floating gate in multi-functional flash memories.

Semiconducting two-dimensional materials appear to be excellent candidates for non-volatile memory applications. However, the limited controllability of charge trapping behaviors and the lack of multi-bit storage studies in two-dimensional based memory devices require further improvement for realistic applications. Here, we report a flash memory consisting of metal NPs-molybdenum disulphide (MoS2) as a floating gate by introducing a metal nanoparticle (NP) (Ag, Au, Pt) monolayer underneath the MoS2 nanosheets. Controlled charge trapping and long data retention have been achieved in a metal (Ag, Au, Pt) NPs-MoS2 floating gate flash memory. This controlled charge trapping is hypothesized to be attributed to band bending and a built-in electric field ξbi between the interface of the metal NPs and MoS2. The metal NPs-MoS2 floating gate flash memories were further proven to be multi-bit memory storage devices possessing a 3-bit storage capability and a good retention capability up to 10(4) s. We anticipate that these findings would provide scientific insight for the development of novel memory devices utilizing an atomically thin two-dimensional lattice structure.

Ultra-flexible nonvolatile memory based on donor-acceptor diketopyrrolopyrrole polymer blends.

Flexible memory cell array based on high mobility donor-acceptor diketopyrrolopyrrole polymer has been demonstrated. The memory cell exhibits low read voltage, high cell-to-cell uniformity and good mechanical flexibility, and has reliable retention and endurance memory performance. The electrical properties of the memory devices are systematically investigated and modeled. Our results suggest that the polymer blends provide an important step towards high-density flexible nonvolatile memory devices.

Reversible conversion of dominant polarity in ambipolar polymer/graphene oxide hybrids.

The possibility to selectively modulate the charge carrier transport in semiconducting materials is extremely challenging for the development of high performance and low-power consuming logic circuits. Systematical control over the polarity (electrons and holes) in transistor based on solution processed layer by layer polymer/graphene oxide hybrid system has been demonstrated. The conversion degree of the polarity is well controlled and reversible by trapping the opposite carriers. Basically, an electron device is switched to be a hole only device or vice versa. Finally, a hybrid layer ambipolar inverter is demonstrated in which almost no leakage of opposite carrier is found. This hybrid material has wide range of applications in planar p-n junctions and logic circuits for high-throughput manufacturing of printed electronic circuits.

Surface engineering of reduced graphene oxide for controllable ambipolar flash memories.

Tunable charge-trapping behaviors including unipolar charge trapping of one type of charge carrier and ambipolar trapping of both electrons and holes in a complementary manner is highly desirable for low power consumption multibit flash memory design. Here, we adopt a strategy of tuning the Fermi level of reduced graphene oxide (rGO) through self-assembled monolayer (SAM) functionalization and form p-type and n-type doped rGO with a wide range of manipulation on work function. The functionalized rGO can act as charge-trapping layer in ambipolar flash memories, and a dramatic transition of charging behavior from unipolar trapping of electrons to ambipolar trapping and eventually to unipolar trapping of holes was achieved. Adjustable hole/electron injection barriers induce controllable Vth shift in the memory transistor after programming operation. Finally, we transfer the ambipolar memory on flexible substrates and study their charge-trapping properties at various bending cycles. The SAM-functionalized rGO can be a promising candidate for next-generation nonvolatile memories.

Pyrene based conjugated materials: synthesis, characterization and electroluminescent properties.

In this work, three novel pyrene cored small conjugated molecules, namely 1,3,6,8-tetrakis(6-(octyloxy)naphthalene-2-yl)pyrene (PY-1), 1,3,6,8-tetrakis((E)-2-(6-(n-octyloxy)naphthalene-2-yl)vinyl)pyrene (PY-2) and 1,3,6,8-tetrakis((6-(n-octyloxy)naphthalene-2-yl)ethynyl)pyrene (PY-3) have been synthesized by Suzuki, heck and Sonogashira organometallic coupling reactions, respectively. The effects of single, double and triple bonds on their optical, electrochemical, and thermal properties are studied in detail. These are all materials fluorescent and they have been used in organic light-emitting diodes (OLEDs) and their electroluminescent properties have been studied.

The role of a nanoparticle monolayer on the flow of polymer melts in nanochannels.

Understanding and controlling the flow properties of polymer melts at the nanoscale is of great relevance in fundamental research and in a variety of applications. In the present study we have analysed experimentally the flow behaviour of polymers in nanochannels of varying roughness, produced by gold nanoparticle absorption. The experimental results show that nanochannel roughness has a significant influence on surface energy and on the flow behaviour of polymer melts. These results provide fundamental information on the preparation of one-dimensional polymer nanochannels applicable in both micro- and nano-injection technology.

An upconverted photonic nonvolatile memory.

Conventional flash memory devices are voltage driven and found to be unsafe for confidential data storage. To ensure the security of the stored data, there is a strong demand for developing novel nonvolatile memory technology for data encryption. Here we show a photonic flash memory device, based on upconversion nanocrystals, which is light driven with a particular narrow width of wavelength in addition to voltage bias. With the help of near-infrared light, we successfully manipulate the multilevel data storage of the flash memory device. These upconverted photonic flash memory devices exhibit high ON/OFF ratio, long retention time and excellent rewritable characteristics.

Improved polyvinylpyrrolidone microneedle arrays with non-stoichiometric cyclodextrin.

Dissolving polymer microneedles have attracted much attention for their biocompatibility, fast dissolution, and high drug loading. Among them, polyvinylpyrrolidone (PVP) is widely used, but its high water absorption and poor mechanical properties constrain its broad applications. Herein we show that adding cyclodextrin (CD) to form PVP-CD inclusion complexes can alleviate these problems. The water absorption of PVP was reduced by 36-40% at different RHs as the PVP-CD inclusion complexes formed. Attractively, the water absorption at 10 and 20 days remained almost the same for the complexes while it could dramatically increase for the pure PVP samples, particularly in high humidity environments, indicating a possibly longer storage time for the complexes. It was also found that the Young's modulus and hardness of the PVP-CD could be greatly improved, especially for low molecular weight PVP. Furthermore, the glass transition temperature (Tg) of the PVP-CD increased by up to 39 °C. With the improved properties, the fabricated PVP-CD microneedles possessed much sharper needle tips and the patch had less cracks than those made from pure PVP. Pig skin application results suggested that the PVP-CD microneedle arrays were able to reliably pierce the stratum corneum of the skin while it was not achievable for the PVP microneedles with the same geometry. We anticipate that these PVP-CD complex microneedles are more suitable for vaccine and drug delivery because of their superior properties.

Solution processed molecular floating gate for flexible flash memories.

Solution processed fullerene (C60) molecular floating gate layer has been employed in low voltage nonvolatile memory device on flexible substrates. We systematically studied the charge trapping mechanism of the fullerene floating gate for both p-type pentacene and n-type copper hexadecafluorophthalocyanine (F16CuPc) semiconductor in a transistor based flash memory architecture. The devices based on pentacene as semiconductor exhibited both hole and electron trapping ability, whereas devices with F16CuPc trapped electrons alone due to abundant electron density. All the devices exhibited large memory window, long charge retention time, good endurance property and excellent flexibility. The obtained results have great potential for application in large area flexible electronic devices.