Surface properties of 1T-TaS2 and contrasting its electron-phonon coupling with TlBiTe2 from helium atom scattering.

We present a detailed helium atom scattering study of the charge-density wave (CDW) system and transition metal dichalcogenide 1T-TaS2. In terms of energy dissipation, we determine the electron-phonon (e-ph) coupling, a quantity that is at the heart of conventional superconductivity and may even "drive" phase transitions such as CDWs. The e-ph coupling of TaS2 in the commensurate CDW phase (λ = 0.59 ± 0.12) is compared with measurements of the topo-logical insulator TlBiTe2 (λ = 0.09 ± 0.01). Furthermore, by means of elastic He diffraction and resonance/interference effects in He scattering, the thermal expansion of the surface lattice, the surface step height, and the three-dimensional atom-surface interaction potential are determined including the electronic corrugation of 1T-TaS2. The linear thermal expansion coefficient is similar to that of other transition-metal dichalcogenides. The He-TaS2 interaction is best described by a corrugated Morse potential with a relatively large well depth and supports a large number of bound states, comparable to the surface of Bi2Se3, and the surface electronic corrugation of 1T-TaS2 is similar to the ones found for semimetal surfaces.

Observation of Dirac Charge-Density Waves in Bi2Te2Se.

While parallel segments in the Fermi level contours, often found at the surfaces of topological insulators (TIs), would imply "strong" nesting conditions, the existence of charge-density waves (CDWs)-periodic modulations of the electron density-has not been verified up to now. Here, we report the observation of a CDW at the surface of the TI Bi2Te2Se(111), below ≈350K, by helium-atom scattering and, thus, experimental evidence for a CDW involving Dirac topological electrons. Deviations of the order parameter observed below 180K, and a low-temperature break of time reversal symmetry, suggest the onset of a spin-density wave with the same period as the CDW in the presence of a prominent electron-phonon interaction, originating from Rashba spin-orbit coupling.

Evolution of ordered nanoporous phases during h-BN growth: controlling the route from gas-phase precursor to 2D material by in situ monitoring.

Large-area single-crystal monolayers of two-dimensional (2D) materials such as graphene and hexagonal boron nitride (h-BN) can be grown by chemical vapour deposition (CVD). However, the high temperatures and fast timescales at which the conversion from a gas-phase precursor to the 2D material appears, make it extremely challenging to simultaneously follow the atomic arrangements. We utilise helium atom scattering to discover and control the growth of novel 2D h-BN nanoporous phases during the CVD process. We find that prior to the formation of h-BN from the gas-phase precursor, a metastable (3 × 3) structure is formed, and that excess deposition on the resulting 2D h-BN leads to the emergence of a (3 × 4) structure. We illustrate that these nanoporous structures are produced by partial dehydrogenation and polymerisation of the borazine precursor upon adsorption. These steps are largely unexplored during the synthesis of 2D materials and we unveil the rich phases during CVD growth. Our results provide significant foundations for 2D materials engineering in CVD, by adjusting or carefully controlling the growth conditions and thus exploiting these intermediate structures for the synthesis of covalent self-assembled 2D networks.

Surface electronic corrugation of a one-dimensional topological metal: Bi(114).

The surface of Bi(114) is a striking example where the reduced dimensionality gives rise to structural rearrangement and new states at the surface. Here, we present a study of the surface structure and electronic corrugation of this quasi one-dimensional topological metal based on helium atom scattering (HAS) measurements. In contrast to low-index metal surfaces, upon scattering from the stepped (114) truncation of Bi, a large proportion of the incident beam is scattered into higher order diffraction channels which in combination with the large surface unit cell makes an analysis challenging. The surface electronic corrugation of Bi(114) is determined, using measurements upon scattering normal to the steps, together with quantum mechanical scattering calculations. Therefore, minimisation routines that vary the shape of the corrugation are employed, in order to minimise the deviation between the calculations and experimental scans. Furthermore, we illustrate that quantum mechanical scattering calculations can be used to determine the orientation of the in- and outgoing beam with respect to the stepped surface structure.

Atom-surface van der Waals potentials of topological insulators and semimetals from scattering measurements.

The phenomenology of resonant scattering has been known since the earliest experiments upon scattering of atomic beams from surfaces and is a means of obtaining experimental information about the fundamentals of weak adsorption systems in the van der Waals regime. We provide an overview of the experimental approach based on new experimental data for the He-Sb2Te3(111) system, followed by a comparative overview and perspective of recent results for topological semimetal and insulator surfaces. Moreover, we shortly discuss the perspectives of calculating helium-surface interaction potentials from ab initio calculations. Our perspective demonstrates that atom-surface scattering provides direct experimental information about the atom-surface interaction in the weak physisorption regime and can also be used to determine the lifetime and mean free path of the trapped atom. We further discuss the effects of elastic and inelastic scattering on the linewidth and lifetime of the trapped He atom with an outlook on future developments and applications.

Inelastic helium atom scattering from Sb2Te3(111): phonon dispersion, focusing effects and surfing.

We present an experimental study of inelastic scattering processes on the (111) surface of the topological insulator Sb2Te3 using helium atom scattering. In contrast to other binary topological insulators such as Bi2Se3 and Bi2Te3, Sb2Te3 is much less studied and the as-grown Sb2Te3 sample turns out to be p-doped, with the Fermi-level located below the Dirac-point as confirmed by angle-resolved photoemission spectroscopy. We report the surface phonon dispersion along both high symmetry directions in the energy region below 11 meV, where the Rayleigh mode exhibits the strongest intensity. The experimental data is compared with a study based on density functional perturbation theory calculations, providing good agreement except for a set of additional peculiar inelastic events below the Rayleigh mode. In addition, an analysis of angular scans with respect to a number of additional inelastic events is presented, including resonance enhancement, kinematical focusing, focused inelastic resonance and surfing. In the latter case, phonon-assisted adsorption of the incident helium atom gives rise to a bound state where the helium atom rides the created Rayleigh wave.

Origin of the Electron-Phonon Interaction of Topological Semimetal Surfaces Measured with Helium Atom Scattering.

He atom scattering has been demonstrated to be a sensitive probe of the electron-phonon interaction parameter λ at metal and metal-overlayer surfaces. Here it is shown that the theory linking λ to the thermal attenuation of atom scattering spectra (the Debye-Waller factor) can be applied to topological semimetal surfaces, such as the quasi-one-dimensional charge-density-wave system Bi(114) and the layered pnictogen chalcogenides. The electron-phonon coupling, as determined for several topological insulators belonging to the class of bismuth chalcogenides, suggests a dominant contribution of the surface quantum well states over the Dirac electrons in terms of λ.

Helium-Surface Interaction and Electronic Corrugation of Bi2Se3(111).

We present a study of the atom-surface interaction potential for the He-Bi2Se3(111) system. Using selective adsorption resonances, we are able to obtain the complete experimental band structure of atoms in the corrugated surface potential of the topological insulator Bi2Se3. He atom scattering spectra show several selective adsorption resonance features that are analyzed, starting with the free-atom approximation and a laterally averaged atom-surface interaction potential. Based on quantum mechanical calculations of the He-surface scattering intensities and resonance processes, we are then considering the three-dimensional atom-surface interaction potential, which is further refined to reproduce the experimental data. Following this analysis, the He-Bi2Se3(111) interaction potential is best represented by a corrugated Morse potential with a well depth of D = (6.54 ± 0.05) meV, a stiffness of κ = (0.58 ± 0.02) Å-1, and a surface electronic corrugation of (5.8 ± 0.2)% of the lattice constant. The experimental data may also be used as a challenging benchmark system to analyze the suitability of several van der Waals approaches: the He-Bi2Se3(111) interaction captures the fundamentals of weak adsorption systems where the binding is governed by long-range electronic correlations.