Emerging many-body effects in semiconductor artificial graphene with low disorder.

The interplay between electron-electron interactions and the honeycomb topology is expected to produce exotic quantum phenomena and find applications in advanced devices. Semiconductor-based artificial graphene (AG) is an ideal system for these studies that combines high-mobility electron gases with AG topology. However, to date, low-disorder conditions that reveal the interplay of electron-electron interaction with AG symmetry have not been achieved. Here, we report the creation of low-disorder AG that preserves the near-perfection of the pristine electron layer by fabricating small period triangular antidot lattices on high-quality quantum wells. Resonant inelastic light scattering spectra show collective spin-exciton modes at the M-point's nearly flatband saddle-point singularity in the density of states. The observed Coulomb exchange interaction energies are comparable to the gap of Dirac bands at the M-point, demonstrating interplay between quasiparticle interactions and the AG potential. The saddle-point exciton energies are in the terahertz range, making low-disorder AG suitable for contemporary optoelectronic applications.

Demonstration of universal parametric entangling gates on a multi-qubit lattice.

We show that parametric coupling techniques can be used to generate selective entangling interactions for multi-qubit processors. By inducing coherent population exchange between adjacent qubits under frequency modulation, we implement a universal gate set for a linear array of four superconducting qubits. An average process fidelity of ℱ = 93% is estimated for three two-qubit gates via quantum process tomography. We establish the suitability of these techniques for computation by preparing a four-qubit maximally entangled state and comparing the estimated state fidelity with the expected performance of the individual entangling gates. In addition, we prepare an eight-qubit register in all possible bitstring permutations and monitor the fidelity of a two-qubit gate across one pair of these qubits. Across all these permutations, an average fidelity of ℱ = 91.6 ± 2.6% is observed. These results thus offer a path to a scalable architecture with high selectivity and low cross-talk.

Observation of Dirac bands in artificial graphene in small-period nanopatterned GaAs quantum wells.

Charge carriers in graphene behave like massless Dirac fermions (MDFs) with linear energy-momentum dispersion 1, 2 , providing a condensed-matter platform for studying quasiparticles with relativistic-like features. Artificial graphene (AG)-a structure with an artificial honeycomb lattice-exhibits novel phenomena due to the tunable interplay between topology and quasiparticle interactions 3-6 . So far, the emergence of a Dirac band structure supporting MDFs has been observed in AG using molecular 5 , atomic 6, 7 and photonic systems 8-10 , including those with semiconductor microcavities 11 . Here, we report the realization of an AG that has a band structure with vanishing density of states consistent with the presence of MDFs. This observation is enabled by a very small lattice constant (a = 50 nm) of the nanofabricated AG patterns superimposed on a two-dimensional electron gas hosted by a high-quality GaAs quantum well. Resonant inelastic light-scattering spectra reveal low-lying transitions that are not present in the unpatterned GaAs quantum well. These excitations reveal the energy dependence of the joint density of states for AG band transitions. Fermi level tuning through the Dirac point results in a collapse of the density of states at low transition energy, suggesting the emergence of the MDF linear dispersion in the AG.

Too Hot for Photon-Assisted Transport: Hot-Electrons Dominate Conductance Enhancement in Illuminated Single-Molecule Junctions.

We investigate light-induced conductance enhancement in single-molecule junctions via photon-assisted transport and hot-electron transport. Using 4,4'-bipyridine bound to Au electrodes as a prototypical single-molecule junction, we report a 20-40% enhancement in conductance under illumination with 980 nm wavelength radiation. We probe the effects of subtle changes in the transmission function on light-enhanced current and show that discrete variations in the binding geometry result in a 10% change in enhancement. Importantly, we prove theoretically that the steady-state behavior of photon-assisted transport and hot-electron transport is identical but that hot-electron transport is the dominant mechanism for optically induced conductance enhancement in single-molecule junctions when the wavelength used is absorbed by the electrodes and the hot-electron relaxation time is long. We confirm this experimentally by performing polarization-dependent conductance measurements of illuminated 4,4'-bipyridine junctions. Finally, we perform lock-in type measurements of optical current and conclude that currents due to laser-induced thermal expansion mask optical currents. This work provides a robust experimental framework for studying mechanisms of light-enhanced transport in single-molecule junctions and offers tools for tuning the performance of organic optoelectronic devices by analyzing detailed transport properties of the molecules involved.

Nanoscale Engineering of Closely-Spaced Electronic Spins in Diamond.

Numerous theoretical protocols have been developed for quantum information processing with dipole-coupled solid-state spins. Nitrogen vacancy (NV) centers in diamond have many of the desired properties, but a central challenge has been the positioning of NV centers at the nanometer scale that would allow for efficient and consistent dipolar couplings. Here we demonstrate a method for chip-scale fabrication of arrays of single NV centers with record spatial localization of about 10 nm in all three dimensions and controllable inter-NV spacing as small as 40 nm, which approaches the length scale of strong dipolar coupling. Our approach uses masked implantation of nitrogen through nanoapertures in a thin gold film, patterned via electron-beam lithography and dry etching. We verified the position and spin properties of the resulting NVs through wide-field super-resolution optically detected magnetic resonance imaging.