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1.
Phys Rev Lett ; 118(23): 233601, 2017 Jun 09.
Artículo en Inglés | MEDLINE | ID: mdl-28644636

RESUMEN

The two-photon dressing of a "three-level ladder" system, here the ground state, the exciton, and the biexciton of a semiconductor quantum dot, leads to new eigenstates and allows one to manipulate the time ordering of the paired photons without unitary postprocessing. We show that, after spectral postselection of the single dressed states, the time ordering of the cascaded photons can be removed or conserved. Our joint experimental and theoretical study demonstrates the high potential of a "ladder" system to be a versatile source of orthogonally polarized, bunched or antibunched pairs of photons.

2.
ACS Photonics ; 3(12): 2461-2466, 2016 Dec 21.
Artículo en Inglés | MEDLINE | ID: mdl-28713845

RESUMEN

Optimized light-matter coupling in semiconductor nanostructures is a key to understand their optical properties and can be enabled by advanced fabrication techniques. Using in situ electron beam lithography combined with a low-temperature cathodoluminescence imaging, we deterministically fabricate microlenses above selected InAs quantum dots (QDs), achieving their efficient coupling to the external light field. This enables performing four-wave mixing microspectroscopy of single QD excitons, revealing the exciton population and coherence dynamics. We infer the temperature dependence of the dephasing in order to address the impact of phonons on the decoherence of confined excitons. The loss of the coherence over the first picoseconds is associated with the emission of a phonon wave packet, also governing the phonon background in photoluminescence (PL) spectra. Using theory based on the independent boson model, we consistently explain the initial coherence decay, the zero-phonon line fraction, and the line shape of the phonon-assisted PL using realistic quantum dot geometries.

3.
Rev Sci Instrum ; 86(7): 073903, 2015 Jul.
Artículo en Inglés | MEDLINE | ID: mdl-26233395

RESUMEN

We report on an advanced in-situ electron-beam lithography technique based on high-resolution cathodoluminescence (CL) spectroscopy at low temperatures. The technique has been developed for the deterministic fabrication and quantitative evaluation of nanophotonic structures. It is of particular interest for the realization and optimization of non-classical light sources which require the pre-selection of single quantum dots (QDs) with very specific emission features. The two-step electron-beam lithography process comprises (a) the detailed optical study and selection of target QDs by means of CL-spectroscopy and (b) the precise retrieval of the locations and integration of target QDs into lithographically defined nanostructures. Our technology platform allows for a detailed pre-process determination of important optical and quantum optical properties of the QDs, such as the emission energies of excitonic complexes, the excitonic fine-structure splitting, the carrier dynamics, and the quantum nature of emission. In addition, it enables a direct and precise comparison of the optical properties of a single QD before and after integration which is very beneficial for the quantitative evaluation of cavity-enhanced quantum devices.

4.
Opt Express ; 20(5): 5099-107, 2012 Feb 27.
Artículo en Inglés | MEDLINE | ID: mdl-22418315

RESUMEN

Optical and electrical investigations of vertical-cavity surface-emitting lasers (VCSEL) with a monolithically integrated electro-optical modulator (EOM) allow for a detailed physical understanding of this complex compound cavity laser system. The EOM VCSEL light output is investigated to identify optimal working points. An electro-optic resonance feature triggered by the quantum confined Stark effect is used to modulate individual VCSEL modes by more than 20 dB with an extremely small EOM voltage change of less than 100 mV. Spectral mode analysis reveals modulation of higher order modes and very low wavelength chirp of < 0.5 nm. Dynamic experiments and simulation predict an intrinsic bandwidth of the EOM VCSEL exceeding 50 GHz.


Asunto(s)
Electrónica/instrumentación , Rayos Láser , Telecomunicaciones/instrumentación , Diseño de Equipo , Análisis de Falla de Equipo , Luz , Dispersión de Radiación
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