RESUMEN
Bottom-gate thin-film transistors (TFTs) with n-type amorphous indium-gallium-zinc oxide (a-IGZO) active channels and indium-tin oxide (ITO) source/drain electrodes were fabricated. Then, an ultraviolet (UV) nanosecond pulsed laser with a wavelength of 355 nm was scanned to locally anneal the active channel at various laser powers. After laser annealing, negative shifts in the threshold voltages and enhanced on-currents were observed at laser powers ranging from 54 to 120 mW. The energy band gap and work function of a-IGZO extracted from the transmittance and ultraviolet photoelectron spectroscopy (UPS) measurement data confirm that different energy band structures for the ITO electrode/a-IGZO channel were established depending on the laser annealing conditions. Based on these observations, the electron injection mechanism from ITO electrodes to a-IGZO channels was analyzed. The results show that the selective laser annealing process can improve the electrical performance of the a-IGZO TFTs without any thermal damage to the substrate.
RESUMEN
Free-form factor optoelectronics is becoming more important for various applications. Specifically, flexible and transparent optoelectronics offers the potential to be adopted in wearable devices in displays, solar cells, or biomedical applications. However, current transparent electrodes are limited in conductivity and flexibility. This study aims to address these challenges and explore potential solutions. For the next-generation transparent conductive electrode, Al-doped zinc oxide (AZO) and silver (AZO/Ag/AZO) deposited by in-line magnetron sputtering without thermal treatment was investigated, and this transparent electrode was used as a transparent organic light-emitting diode (OLED) anode to maximize the transparency characteristics. The experiment and simulation involved adjusting the thickness of Ag and AZO and OLED structure to enhance the transmittance and device performance. The AZO/Ag/AZO with Ag of 12 nm and AZO of 32 nm thickness achieved the results of the highest figure of merit (FOM) (Φ550 = 4.65 mΩ-1) and lowest roughness. The full structure of transparent OLED (TrOLED) with AZO/Ag/AZO anode and Mg:Ag cathode reached 64.84% transmittance at 550 nm, and 300 cd/m2 at about 4 V. The results demonstrate the feasibility of adopting flexible substrates, such as PET, without the need for thermal treatment. This research provides valuable insights into the development of transparent and flexible electronic devices.
