Development of the Tele-Measurement of Plasma Uniformity via Surface Wave Information (TUSI) Probe for Non-Invasive In-Situ Monitoring of Electron Density Uniformity in Plasma Display Fabrication Process.

The importance of monitoring the electron density uniformity of plasma has attracted significant attention in material processing, with the goal of improving production yield. This paper presents a non-invasive microwave probe for in-situ monitoring electron density uniformity, called the Tele-measurement of plasma Uniformity via Surface wave Information (TUSI) probe. The TUSI probe consists of eight non-invasive antennae and each antenna estimates electron density above the antenna by measuring the surface wave resonance frequency in a reflection microwave frequency spectrum (S11). The estimated densities provide electron density uniformity. For demonstration, we compared it with the precise microwave probe and results revealed that the TUSI probe can monitor plasma uniformity. Furthermore, we demonstrated the operation of the TUSI probe beneath a quartz or wafer. In conclusion, the demonstration results indicated that the TUSI probe can be used as an instrument for a non-invasive in-situ method for measuring electron density uniformity.

Observation of prior light emission before arcing development in a low-temperature plasma with multiple snapshot analysis.

Arcing is a ubiquitous phenomenon and a crucial issue in high-voltage applied systems, especially low-temperature plasma (LTP) engineering. Although arcing in LTPs has attracted interest due to the severe damage it can cause, its underlying mechanism has yet to be fully understood. To elucidate the arcing mechanism, this study investigated various signals conventionally used to analyze arcing such as light emission, arcing current and voltage, and background plasma potential. As a result, we found that light emission occurs as early as 0.56 µs before arcing current initiation, which is a significant indicator of the explosive development of arcing as well as other signals. We introduce an arcing inducing probe (AIP) designed to localize arcing on the tip edge along with multiple snapshot analysis since arcing occurs randomly in space and time. Analysis reveals that the prior light emission consists of sheath and tip glows from the whole AIP sheath and the AIP tip edge, respectively. Formation mechanisms of these emissions based on multiple snapshot image analysis are discussed. This light emission before arcing current initiation provides a significant clue to understanding the arcing formation mechanism and represents a new indicator for forecasting arcing in LTPs.

Investigation into SiO2 Etching Characteristics Using Fluorocarbon Capacitively Coupled Plasmas: Etching with Radical/Ion Flux-Controlled.

SiO2 etching characteristics were investigated in detail. Patterned SiO2 was etched using radio-frequency capacitively coupled plasma with pulse modulation in a mixture of argon and fluorocarbon gases. Through plasma diagnostic techniques, plasma parameters (radical and electron density, self-bias voltage) were also measured. In this work, we identified an etching process window, where the etching depth is a function of the radical flux. Then, pulse-off time was varied in the two extreme cases: the lowest and the highest radical fluxes. It was observed that increasing pulse-off time resulted in an enhanced etching depth and the reduced etching depth respectively. This opposing trend was attributed to increasing neutral to ion flux ratio by extending pulse-off time within different etching regimes.

Influence of Additive N2 on O2 Plasma Ashing Process in Inductively Coupled Plasma.

One of the cleaning processes in semiconductor fabrication is the ashing process using oxygen plasma, which has been normally used N2 gas as additive gas to increase the ashing rate, and it is known that the ashing rate is strongly related to the concentration of oxygen radicals measured OES. However, by performing a comprehensive experiment of the O2 plasma ashing process in various N2/O2 mixing ratios and RF powers, our investigation revealed that the tendency of the density measured using only OES did not exactly match the ashing rate. This problematic issue can be solved by considering the plasma parameter, such as electron density. This study can suggest a method inferring the exact maximum condition of the ashing rate based on the plasma diagnostics such as OES, Langmuir probe, and cutoff probe, which might be useful for the next-generation plasma process.

Development of a High-Linearity Voltage and Current Probe with a Floating Toroidal Coil: Principle, Demonstration, Design Optimization, and Evaluation.

As the conventional voltage and current (VI) probes widely used in plasma diagnostics have separate voltage and current sensors, crosstalk between the sensors leads to degradation of measurement linearity, which is related to practical accuracy. Here, we propose a VI probe with a floating toroidal coil that plays both roles of a voltage and current sensor and is thus free from crosstalk. The operation principle and optimization conditions of the VI probe are demonstrated and established via three-dimensional electromagnetic wave simulation. Based on the optimization results, the proposed VI probe is fabricated and calibrated for the root-mean-square (RMS) voltage and current with a high-voltage probe and a vector network analyzer. Then, it is evaluated through a comparison with a commercial VI probe, with the results demonstrating that the fabricated VI probe achieved a slightly higher linearity than the commercial probe: R2 of 0.9967 and 0.9938 for RMS voltage and current, respectively. The proposed VI probe is believed to be applicable to plasma diagnostics as well as process monitoring with higher accuracy.

Development of the Measurement of Lateral Electron Density (MOLE) Probe Applicable to Low-Pressure Plasma Diagnostics.

As the importance of measuring electron density has become more significant in the material fabrication industry, various related plasma monitoring tools have been introduced. In this paper, the development of a microwave probe, called the measurement of lateral electron density (MOLE) probe, is reported. The basic properties of the MOLE probe are analyzed via three-dimensional electromagnetic wave simulation, with simulation results showing that the probe estimates electron density by measuring the surface wave resonance frequency from the reflection microwave frequency spectrum (S11). Furthermore, an experimental demonstration on a chamber wall measuring lateral electron density is conducted by comparing the developed probe with the cutoff probe, a precise electron density measurement tool. Based on both simulation and experiment results, the MOLE probe is shown to be a useful instrument to monitor lateral electron density.