Design optimization for bright electrically-driven quantum dot single-photon sources emitting in telecom O-band.

A combination of advanced light engineering concepts enables a substantial improvement in photon extraction efficiency of micro-cavity-based single-photon sources in the telecom O-band at ∼1.3 µm. We employ a broadband bottom distributed Bragg reflector (DBR) and a top DBR formed in a dielectric micropillar with an additional circular Bragg grating in the lateral plane. This device design includes a doped layer in pin-configuration to allow for electric carrier injection. It provides broadband (∼8-10 nm) emission enhancement with an overall photon-extraction efficiency of ∼83% into the upper hemisphere and photon-extraction efficiency of ∼79% within numerical aperture NA=0.7. The efficiency of photon coupling to a single-mode fiber reaches 11% for SMF28 fiber (with NA=0.12), exceeds 22% for 980HP fiber (with NA=0.2) and reaches ∼40% for HNA fiber (with NA=0.42) as demonstrated by 3D finite-difference time-domain modeling.

Wavelength-stabilized near-field laser.

Surface-trapped electromagnetic waves can be localized at a boundary between a semiconductor distributed Bragg reflector (DBR) and a homogeneous dielectric medium or air. These waves enable a novel class of in-plane-emitting optical devices including edge-emitting lasers, disk microlasers or near-field fiber-coupled lasers. We show that the surface-trapped modes can be controlled by tuning the thickness of a single DBR layer. Diagrams in variables "wavelength - thickness of the control layer" are constructed for both TM and TE optical modes revealing the parameter domains, in which surface-trapped modes exist. The domains contain cusps, in the vicinity of which a surface-trapped optical mode is allowed only in a narrow spectral region, enabling wavelength-stabilized operation of a laser. For a structure designed for lasing at ∼1 µm, the lasing wavelength shifts upon temperature increase at a rate ∼0.08 nm/K. The fraction of the optical power of the surface-trapped mode accumulated in the homogeneous dielectric can reach ∼50%. Thus, such structure is a near-field wavelength-stabilized semiconductor laser. Further, such structure can be applied as a wavelength-stabilized semiconductor optical amplifier adjacent to a dielectric waveguide or an optical fiber, both for integrated photonics and for ultrahigh-brightness laser diodes and diode arrays and stacks.

Virtual cavity in distributed Bragg reflectors.

We show theoretically and experimentally that distributed Bragg reflector (DBR) supports a surface electromagnetic wave exhibiting evanescent decay in the air and oscillatory decay in the DBR. The wave exists in TM polarization only. The field extension in the air may reach several wavelengths of light. Once gain medium is introduced into the DBR a novel class of diode lasers, semiconductor optical amplifiers, light-emitting diodes, etc. can be developed allowing a new type of in-plane or near-field light outcoupling. To improve the wavelength stability of the laser diode, a resonant cavity structure can be coupled to the DBR, allowing a coupled state of the cavity mode and the near-field mode. A GaAlAs-based epitaxial structure of a vertical-cavity surface-emitting laser (VCSEL) having an antiwaveguiding cavity and multiple GaInAs quantum wells as an active region was grown and processed as an in-plane Fabry-Pérot resonator with cleaved facets. Windows in the top stripe contact were made to facilitate monitoring of the optical modes. Three types of the optical modes were observed in electroluminescence (EL) studies under high current densities > 1 kA/cm2. Mode A with the longest wavelength is a VCSEL-like mode emitting normal to the surface. Mode B has a shorter wavelength, emitting light at two symmetric lobes tilted with respect to the normal to the surface in the direction parallel to the stripe. Mode C has the shortest wavelength and shifts with a temperature at a rate 0.06 nm/K. Polarization studies reveal predominantly TE emission for modes A and B and purely TM for mode C in agreement with the theory. Spectral position, thermal shift and polarization of mode C confirm it to be a coupled state of the cavity mode and near-field DBR surface-trapped mode.

Room-temperature yellow-orange (In,Ga,Al)P-GaP laser diodes grown on (n11) GaAs substrates.

We report room temperature injection lasing in the yellow-orange spectral range (599-605 nm) in (AlxGa1-x)0.5In0.5P-GaAs diodes with 4 layers of tensile-strained InyGa1-yP quantum dot-like insertions. The wafers were grown by metal-organic vapor phase epitaxy side-by-side on (811), (211) and (322) GaAs substrates tilted towards the <111> direction with respect to the (100) surface. Four sheets of GaP-rich quantum barrier insertions were applied to suppress leakage of non-equilibrium electrons from the gain medium. Laser diodes having a threshold current densities of ~7-10 kA/cm2 at room temperature were realized for both (211) and (322) surface orientations at cavity lengths of ~1mm. Emission wavelength at room temperature ~600 nm is shorter by ~8 nm than previously reported. As an opposite example, the devices grown on (811) GaAs substrates did not show lasing at room temperature.

Anti-waveguiding vertical-cavity surface-emitting laser at 850 nm: From concept to advances in high-speed data transmission.

Oxide-confined vertical cavity surface emitting lasers (VCSELs) with anti-waveguiding AlAs-rich core presently attract a lot of attention. Anti-waveguiding cavity enables the maximum possible optical confinement of the VCSEL mode ("λ/2 design"), increases its oscillator strength and reduces dramatically the optical power accumulated in the VCSEL mesa regions outside the aperture. VCSEL designs are suggested that favor single transverse mode operation. Modeling including current-induced and absorption-induced overheating shows that the preference for the transverse fundamental mode persists up to 10 mA current at 5 µm aperture diameter. Error-free data transmission is realized up to 160 Gb/s in digital-multitone (DMT) format using single-mode anti-waveguiding VCSELs. The approach to single-mode anti-waveguiding VCSELs is extended over a broad spectral range realizing error-free high-speed data transmission at both 850 nm and 910 nm.

Tunable metastability of surface nanostructure arrays.

A Fokker-Planck equation is used to model the coarsening of surface nanostructure arrays. Metastable states are identified which are associated with a narrow size distribution and a coverage dependent mean island size. This is a general feature linked to nanostructures which, as a function of island size, are associated with a minimum in formation energy per atom and a positive chemical potential gradient. This has important implications for the self-organization of quantum dots.

Metastability of ultradense arrays of quantum dots.

We present a linear stability analysis of ultradense arrays of coherently strained islands against Ostwald ripening. Surprisingly, short-range elastic interactions are found to overcome the destabilizing contribution of surface energy, leading to a metastable array of quantum dots. Simulations of Ostwald ripening kinetics directly verify the existence of this metastable regime and confirm the nature of the most unstable mode for subcritical island coverage.

Self-assembled quantum dots: crossover from kinetically controlled to thermodynamically limited growth.

By means of kinetic Monte Carlo simulations of the self-organized growth of quantum dots in strained semiconductor systems we resolve the seemingly contradictory features of kinetic versus thermodynamic behavior, e.g., with respect to the temperature dependence of the average dot size and their dispersion. We show that the size distribution immediately after deposition is kinetically controlled, with smaller islands for lower temperatures and larger islands for higher temperatures. For longer simulation times the kinetics leads to equilibration, and a crossover effect between the size distributions occurs, which is in good agreement with the predictions of thermodynamics.