Low pressure reversibly driving colossal barocaloric effect in two-dimensional vdW alkylammonium halides.

Plastic crystals as barocaloric materials exhibit the large entropy change rivalling freon, however, the limited pressure-sensitivity and large hysteresis of phase transition hinder the colossal barocaloric effect accomplished reversibly at low pressure. Here we report reversible colossal barocaloric effect at low pressure in two-dimensional van-der-Waals alkylammonium halides. Via introducing long carbon chains in ammonium halide plastic crystals, two-dimensional structure forms in (CH3-(CH2)n-1)2NH2X (X: halogen element) with weak interlayer van-der-Waals force, which dictates interlayer expansion as large as 13% and consequently volume change as much as 12% during phase transition. Such anisotropic expansion provides sufficient space for carbon chains to undergo dramatic conformation disordering, which induces colossal entropy change with large pressure-sensitivity and small hysteresis. The record reversible colossal barocaloric effect with entropy change ΔSr ~ 400 J kg-1 K-1 at 0.08 GPa and adiabatic temperature change ΔTr ~ 11 K at 0.1 GPa highlights the design of novel barocaloric materials by engineering the dimensionality of plastic crystals.

Mimicking Synaptic Plasticity and Neural Network Using Memtranstors.

Artificial synaptic devices that mimic the functions of biological synapses have drawn enormous interest because of their potential in developing brain-inspired computing. Current studies are focusing on memristive devices in which the change of the conductance state is used to emulate synaptic behaviors. Here, a new type of artificial synaptic devices based on the memtranstor is demonstrated, which is a fundamental circuit memelement in addition to the memristor, memcapacitor, and meminductor. The state of transtance (presented by the magnetoelectric voltage) in memtranstors acting as the synaptic weight can be tuned continuously with a large number of nonvolatile levels by engineering the applied voltage pulses. Synaptic behaviors including the long-term potentiation, long-term depression, and spiking-time-dependent plasticity are implemented in memtranstors made of Ni/0.7Pb(Mg1/3 Nb2/3 )O3 -0.3PbTiO3 /Ni multiferroic heterostructures. Simulations reveal the capability of pattern learning in a memtranstor network. The work elucidates the promise of memtranstors as artificial synaptic devices with low energy consumption.

Electrochemical-reaction-induced synaptic plasticity in MoOx-based solid state electrochemical cells.

Solid state electrochemical cells with synaptic functions have important applications in building smart-terminal networks. Here, the essential synaptic functions including potentiation and depression of synaptic weight, transition from short- to long-term plasticity, spike-rate-dependent plasticity, and spike-timing-dependent plasticity behavior were successfully realized in an Ag/MoOx/fluorine-doped tin oxide (FTO) cell with continual resistance switching. The synaptic plasticity underlying these functions was controlled by tuning the excitatory post-synaptic current (EPSC) decay, which is determined by the applied voltage pulse number, width, frequency, and intervals between the pre- and post-spikes. The physical mechanism of the artificial synapse operation is attributed to the interfacial electrochemical reaction processes of the MoOx films with the adsorbed water, where protons generated by water decomposition under an electric field diffused into the MoOx films and intercalated into the lattice, leading to the short- and long-term retention of cell resistance, respectively. These results indicate the possibility of achieving advanced artificial synapses with solid state electrochemical cells and will contribute to the development of smart-terminal networking systems.

Ultrathin SmCo5 nanoflakes with high-coercivity prepared by solid particle (NaCl) and surfactant co-assisted ball milling.

The ultrathin SmCo5 nanoflakes with average thickness smaller than 50 nm are prepared by a novel method of solid particle (NaCl) and surfactant co-assisted ball milling. The as-prepared nanoflakes exhibit a narrower thickness distribution of 10-50 nm and high coercivity of 23 kOe. The possible formation mechanism of nanoflakes are proposed. Temperature dependence of demagnetization curves indicate that the magnetization reversal may be controlled by both nucleation and pinning. The results of X-ray powder diffraction and magnetic measurement for aligned SmCo5 nanoflakes resin composite indicate that the nanoflakes have a high texture degree. The ultrathin thickness and high coercivity are beneficial for preparing the high performance soft/hard coupling magnets and nanocomposite magnets.

Moisture effects on the electrochemical reaction and resistance switching at Ag/molybdenum oxide interfaces.

An important potential application of solid state electrochemical reactions is in redox-based resistive switching memory devices. Based on the fundamental switching mechanisms, the memory has been classified into two modes, electrochemical metallization memory (ECM) and valence change memory (VCM). In this work, we have investigated a solid state electrochemical cell with a simple Ag/MoO3-x/fluorine-doped tin oxide (FTO) sandwich structure, which shows a normal ECM switching mode after an electroforming process. While in the lower voltage sweep range, the switching behavior changes to VCM-like mode with the opposite switching polarity to the ECM mode. By current-voltage measurements under different ambient atmospheres and X-ray photoemission spectroscopy analysis, electrochemical anodic passivation of the Ag electrode and valence change of molybdenum ions during resistance switching have been demonstrated. The crucial role of moisture adsorption in the switching mode transition has been clarified based on the Pourbaix diagram for the Ag-H2O system for the first time. These results provide a fundamental insight into the resistance switching mechanism model in solid state electrochemical cells.

Giant barocaloric effect in hexagonal Ni2In-type Mn-Co-Ge-In compounds around room temperature.

The most widespread cooling techniques based on gas compression/expansion encounter environmental problems. Thus, tremendous effort has been dedicated to develop alternative cooling technique and search for solid state materials that show large caloric effects. An application of pressure to a material can cause a change in temperature, which is called the barocaloric effect. Here we report the giant barocaloric effect in a hexagonal Ni2In-type MnCoGe0.99In0.01 compound involving magnetostructural transformation, Tmstr, which is accompanied with a big difference in the internal energy due to a great negative lattice expansion(ΔV/V ~ 3.9%). High resolution neutron diffraction experiments reveal that the hydrostatic pressure can push the Tmstr to a lower temperature at a rate of 7.7 K/kbar, resulting in a giant barocaloric effect. The entropy change under a moderate pressure of 3 kbar reaches 52 J kg(-1) K(-1), which exceeds that of most materials, including the reported giant magnetocaloric effect driven by 5 T magnetic field that is available only by superconducting magnets.

Strong textured SmCo5 nanoflakes with ultrahigh coercivity prepared by multistep (three steps) surfactant-assisted ball milling.

The high coercivity of 26.2 kOe for SmCo5 nanoflakes are obtained by multistep (three steps) surfactant-assisted ball milling. The magnetic properties, phase structure and morphology are studied by VSM, XRD and SEM, respectively. The results demonstrate that the three step ball-milling can keep more complete crystallinity (relatively less defects) during the process of milling compared with one step high energy ball-milling, which enhances the texture degree and coercivity. In addition, the mechanism of coercivity are also studied by the temperature dependence of demagnetization curves for aligned SmCo5 nanoflakes/resin composite, the result indicates that the magnetization reversal could be controlled by co-existed mechanisms of pinning and nucleation.

Anisotropic modulation of magnetic properties and the memory effect in a wide-band (011)-Pr0.7Sr0.3MnO3/PMN-PT heterostructure.

Memory effect of electric-field control on magnetic behavior in magnetoelectric composite heterostructures has been a topic of interest for a long time. Although the piezostrain and its transfer across the interface of ferroelectric/ferromagnetic films are known to be important in realizing magnetoelectric coupling, the underlying mechanism for nonvolatile modulation of magnetic behaviors remains a challenge. Here, we report on the electric-field control of magnetic properties in wide-band (011)-Pr0.7Sr0.3MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 heterostructures. By introducing an electric-field-induced in-plane anisotropic strain field during the cooling process from room temperature, we observe an in-plane anisotropic, nonvolatile modulation of magnetic properties in a wide-band Pr0.7Sr0.3MnO3 film at low temperatures. We attribute this anisotropic memory effect to the preferential seeding and growth of ferromagnetic (FM) domains under the anisotropic strain field. In addition, we find that the anisotropic, nonvolatile modulation of magnetic properties gradually diminishes as the temperature approaches FM transition, indicating that the nonvolatile memory effect is temperature dependent. By taking into account the competition between thermal energy and the potential barrier of the metastable magnetic state induced by the anisotropic strain field, this distinct memory effect is well explained, which provides a promising approach for designing novel electric-writing magnetic memories.

Giant negative thermal expansion in bonded MnCoGe-based compounds with Ni2In-type hexagonal structure.

MnCoGe-based compounds undergo a giant negative thermal expansion (NTE) during the martensitic structural transition from Ni2In-type hexagonal to TiNiSi-type orthorhombic structure. High-resolution neutron diffraction experiments revealed that the expansion of unit cell volume can be as large as ΔV/V ∼ 3.9%. The optimized compositions with concurrent magnetic and structural transitions have been studied for magnetocaloric effect. However, these materials have not been considered as NTE materials partially due to the limited temperature window of phase transition. The as-prepared MnCoGe-based compounds are quite brittle and naturally collapse into powders. By using a few percents (3-4%) of epoxy to bond the powders, we introduced residual stress in the bonded samples and thus realized the broadening of structural transition by utilizing the specific characteristics of lattice softening enforced by the stress. As a result, giant NTE (not only the linear NTE coefficient α but also the operation-temperature window) has been achieved. For example, the average α̅ as much as -51.5 × 10(-6)/K with an operating temperature window as wide as 210 K from 122 to 332 K has been observed in a bonded MnCo0.98Cr0.02Ge compound. Moreover, in the region between 250 and 305 K near room temperature, the α value (-119 × 10(-6)/K) remains nearly independent of temperature. Such an excellent performance exceeds that of most other materials reported previously, suggesting it can potentially be used as a NTE material, particularly for compensating the materials with large positive thermal expansions.

Abnormal percolative transport and colossal electroresistance induced by anisotropic strain in (011)-Pr(0.7)(Ca(0.6)Sr(0.4))(0.3)MnO3/PMN-PT heterostructure.

Abnormal percolative transport in inhomogeneous systems has drawn increasing interests due to its deviation from the conventional percolation picture. However, its nature is still ambiguous partly due to the difficulty in obtaining controllable abnormal percolative transport behaviors. Here, we report the first observation of electric-field-controlled abnormal percolative transport in (011)-Pr(0.7)(Ca(0.6)Sr(0.4))(0.3)MnO3/0.7Pb(Mg(1/3)Nb(2/3))O3-0.3PbTiO3 heterostructure. By introducing an electric-field-induced in-plane anisotropic strain-field in a phase separated PCSMO film, we stimulate a significant inverse thermal hysteresis (~ -17.5 K) and positive colossal electroresistance (~11460%), which is found to be crucially orientation-dependent and completely inconsistent with the well accepted conventional percolation picture. Further investigations reveal that such abnormal inverse hysteresis is strongly related to the preferential formation of ferromagnetic metallic domains caused by in-plane anisotropic strain-field. Meanwhile, it is found that the positive colossal electroresistance should be ascribed to the coactions between the anisotropic strain and the polarization effect from the poling of the substrate which leads to orientation and bias-polarity dependencies for the colossal electroresistance. This work unambiguously evidences the indispensable role of the anisotropic strain-field in driving the abnormal percolative transport and provides a new perspective for well understanding the percolation mechanism in inhomogeneous systems.

Integrating giant microwave absorption with magnetic refrigeration in one multifunctional intermetallic compound of LaFe(11.6)Si(1.4)C(0.2)H(1.7).

Both microwave absorption and magnetocaloric effect (MCE) are two essential performances of magnetic materials. We observe that LaFe(11.6)Si(1.4)C(0.2)H(1.7) intermetallic compound exhibits the advantages of both giant microwave absorption exceeding -42 dB and magnetic entropy change of -20 Jkg(-1)K(-1). The excellent electromagnetic wave absorption results from the large magnetic loss and dielectric loss as well as the efficient complementarity between relative permittivity and permeability. The giant MCE effect in this material provides an ideal technique for cooling the MAMs to avoid temperature increase and infrared radiation during microwave absorption. Our finding suggests that we can integrate the giant microwave absorption with magnetic refrigeration in one multifunctional material. This integration not only advances our understanding of the correlation between microwave absorption and MCE, but also can open a new avenue to exploit microwave devices and electromagnetic stealth.

Correlation between evolution of resistive switching and oxygen vacancy configuration in La0.5Ca0.5MnO3 based memristive devices.

We here report a study of the correlation between the evolution of resistive switching and the oxygen vacancy configuration in La0.5Ca0.5MnO3 (LCMO) based memristive devices. By taking advantage of LCMO located at a phase boundary of the metal-to-insulator transition, we observe the development of the high resistive states, depending upon not only the electrical pulse magnitude but also the switching cycles. We discuss the experimental results by an oxygen migration model that involves both single isolated and clustered oxygen vacancies, which are later verified using aberration-corrected scanning transmission electron microscopy.

Large improvement of coercivity in Sm-(Co,Cu)/Fe films by Cu addition.

The magnetic properties and microstructure of Sm-(Co,Cu)/Fe films were investigated systematically. The addition of Cu is helpful for keeping a better multilayer structure due to the reduction of the crystallization temperature of the hard phase. With lowering the temperature, the coercivity of the Sm-(Co,Cu)/Fe films increases rapidly with a linear relationship. The Cu addition significantly improves the coercivities of the Sm-(Co,Cu)/Fe multilayer films, especially at the low temperatures. Adding the Cu as well as lowering the temperature cause a large inhomogeneity in the hard phase, and therefore a high pinning coercivity.

Local resistance switching at grain and grain boundary surfaces of polycrystalline tungsten oxide films.

Resistance switching behavior has been investigated in as-prepared and oxygen-annealed polycrystalline tungsten oxide films using conductive atomic force microscopy. The oxygen-annealed film appeared more insulative than the as-prepared films. The local current distributions demonstrated the lower conductivity at the grain boundaries than at the grains in the oxygen-annealed films. Reversible resistance switching behavior only occurred at the grain surface region of the oxygen-annealed films and the resistance switching process was described by the local valence change of tungsten ions induced by electrochemical migration of protons or oxygen vacancies. This different resistance switching behavior between the grain and grain boundary surface was attributed to the different oxygen vacancy density caused by the post-annealing process. The present results would be especially meaningful for the fabrication of nanoscale resistive nonvolatile memory devices.

Anomalously large anisotropic magnetoresistance in a perovskite manganite.

The signature of correlated electron materials (CEMs) is the coupling between spin, charge, orbital and lattice resulting in exotic functionality. This complexity is directly responsible for their tunability. We demonstrate here that the broken symmetry, through cubic to orthorhombic distortion in the lattice structure in a prototype manganite single crystal, La(0.69)Ca(0.31)MnO(3), leads to an anisotropic magneto-elastic response to an external field, and consequently to remarkable magneto-transport behavior. An anomalous anisotropic magnetoresistance (AMR) effect occurs close to the metal-insulator transition (MIT) in the system, showing a direct correlation with the anisotropic field-tuned MIT in the system and can be understood by means of a simple phenomenological model. A small crystalline anisotropy stimulates a "colossal" AMR near the MIT phase boundary of the system, thus revealing the intimate interplay between magneto- and electronic-crystalline couplings.

Magnetism, transport, and specific heat of electronically phase-separated Pr(0.7)Pb(0.3)MnO(3) single crystals.

Magnetization, resistivity, and specific heat were studied systematically in the absence and presence of magnetic field in Pr(0.7)Pb(0.3)MnO(3) single crystals, in which electronic phase separation occurs near the ferromagnetic/metallic-paramagnetic/insulating phase transition and the metal-insulator transition temperature is much higher than the Curie temperature. These measurements allow us to extract some fundamental physical parameters such as Fermi energy, density of states at the Fermi energy, Debye temperature, and interaction among electrons, phonons, and magnons. Furthermore, the magnetic entropy was studied around the phase transition temperature regime. It was found that a magnetic entropy change associated with the transition from the connected ferromagnetic phase to isolated superparamagnetic clusters appeared near the metal-insulator transition temperature following a large magnetic entropy change near the ferromagnetic-paramagnetic phase transition.