Bending Stability of Ferroelectric Gated Graphene Field Effect Transistor for Flexible Electronics.

In this work, we explored the potential of the ferroelectric gate of (Pb0.92La0.08)(Zr0.30Ti0.70)O3 (PLZT(8/30/70)) for flexible graphene field effect transistor (GFET) devices. Based on the deep understanding of the VDirac of PLZT(8/30/70) gate GFET, which determines the application of the flexible GFET devices, the polarization mechanisms of PLZT(8/30/70) under bending deformation were analyzed. It was found that both flexoelectric polarization and piezoelectric polarization exist under bending deformation, and their polarization direction is opposite under the same bending deformation. Thus, a relatively stable of VDirac is obtained due to the combination of these two effects. In contrast to the relatively good linear movement of VDirac under bending deformation of relaxor ferroelectric (Pb0.92La0.08)(Zr0.52Ti0.48)O3 (PLZT(8/52/48)) gated GFET, these stable properties of the PLZT(8/30/70) gate GFETs make them have great potential for applications in flexible devices.

Bending Modulated Ultralarge Magnetoresistance in Flexible La0.67Ba0.33MnO3 Thin Film Based Device.

Magnetoresistance based information devices have attracted much attention due to the ability to utilize spins as information carriers. To promote the magnetoresistance-based devices, ultrahigh magnetoresistance ratios are highly desirable for magnetic sensing, memory, and artificial intelligent devices, etc. However, today the magnetoresistance devices are facing the challenge of limited magnetoresistance ratio, low work temperature, or high magnetic field, which calls for proper theories and mechanisms. To address it, we first introduce the flexible bending-controlled magnetoresistance device based on the La0.67Ba0.33MnO3 film. Due to the anisotropic resistance of the La0.67Ba0.33MnO3 film and the nonlinear amplification effect of the Zener diode, the device has exhibited strong magnetoresistive performance (∼8725% at 1 T, 300 K). Combining the assist from mechanical bending and diode, high magnetic field sensitivity with large magnetoresistance ratio (∼1.7 × 104% at 1 T, 300 K) and low work current (∼0.15 mA) is simultaneously achieved at room temperature, which is over 104 times larger than that of the planar La0.67Ba0.33MnO3 film. Based on the above results, we propose one but not the only possible application as tunable multistage switch. Our findings may pave a strategy to develop flexible diode-enhanced magnetoresistance device with ultrahigh magnetoresistance ratios and bending tunable performances.

Interfacial Modulation on Co0.2Fe2.8O4 Epitaxial Thin Films for Anomalous Hall Sensor Applications.

Magnetic oxide films with a strong anomalous Hall effect (AHE) have attracted much attention due to their strong sensitivity and high polarization for magnetic sensor applications. However, the linearity of the anomalous Hall sensors still needs improving. In this work, we propose to use the interface regulation to improve the linearity of the AHE. We grow spinel ferrite Co0.2Fe2.8O4 (CoFeO) thin films on MgAl2O4 (MAO) substrates and alter their interfacial properties by inserting a graphene layer between the MAO substrate and the CoFeO film. Through a detailed structure and performance analysis, it reveals that the insertion of graphene has not broken the epitaxial nature of the films but endows the film with a nanopillar-like structure. A series of electrical tests show that the Hall resistance signal of our thin film system has high sensitivity and high linearity to the magnetic field. Reduced hysteresis and better linearity of the anomalous Hall resistance were found in the graphene-inserted heterostructure due to differences in the nanostructure and possibly interfacial coupling. These results suggest that interfacial engineering offers a pathway to tune the performance of ferrite thin film systems for sensor applications.

Self-assembling behavior and interface structure in vertically aligned nanocomposite (Pr0.5Ba0.5MnO3)1-x:(CeO2)x films on (001) (La,Sr)(Al,Ta)O3 substrates.

Heteroepitaxial oxide-based nanocomposite films possessing a variety of functional properties have attracted tremendous research interest. Here, self-assembled vertically aligned nanocomposite (Pr0.5Ba0.5MnO3)1-x:(CeO2)x (x = 0.2 and 0.5) films have been successfully grown on single-crystalline (001) (La,Sr)(Al,Ta)O3 substrates by the pulsed laser deposition technique. Self-assembling behavior of the nanocomposite films and atomic-scale interface structure between Pr0.5Ba0.5MnO3 matrix and CeO2 nanopillars have been investigated by advanced electron microscopy techniques. Two different orientation relationships, (001)[100]Pr0.5Ba0.5MnO3//(001)[1-10]CeO2 and (001)[100]Pr0.5Ba0.5MnO3//(110)[1-10]CeO2, form between Pr0.5Ba0.5MnO3 and CeO2 in the (Pr0.5Ba0.5MnO3)0.8:(CeO2)0.2 film along the film growth direction, which is essentially different from vertically aligned nanocomposite (Pr0.5Ba0.5MnO3)0.5:(CeO2)0.5 films having only (001)[100]Pr0.5Ba0.5MnO3//(001)[1-10]CeO2 orientation relationship. Both coherent and semi-coherent Pr0.5Ba0.5MnO3/CeO2 interface appear in the films. In contrast to semi-coherent interface with regular distribution of interfacial dislocations, interface reconstruction occurs at the coherent Pr0.5Ba0.5MnO3/CeO2 interface. Our findings indicate that epitaxial strain imposed by the concentration of CeO2 in the nanocomposite films affects the self-assembling behavior of the vertically aligned nanocomposite (Pr0.5Ba0.5MnO3)1-x:(CeO2)x films.

Integration of Both Invariable and Tunable Microwave Magnetisms in a Single Flexible La0.67Sr0.33MnO3 Thin Film.

High-quality flexible magnetic oxide thin films have promoted a wide range of potential applications in spintronic devices due to their unique physical properties. To obtain the optimized microwave magnetism for future all-oxide-based spintronic applications, high-quality oxide materials with excellent epitaxial quality as well as specific bending properties related to ferromagnetic resonance are high in demand. Here, (001)-oriented La0.67Sr0.33MnO3 epitaxial thin films with different thicknesses have been grown and subsequently transferred onto flexible poly(dimethylsiloxane) substrates. The microwave magnetisms of these film samples have been investigated under various bending states. Under bending, the ferromagnetic resonance lineshape of the film gradually transits from a single mode to a superposition of multimodes, possibly because of the uneven distribution of magnetization in the bending film at X-band. This phenomenon is more apparent when the direction of the applied magnetic field goes close to the out-of-plane of the film. Hence, an integration of invariable and continuous tuning of ferromagnetic resonance field under various mechanical bending can be achieved in one same sample by just tuning the direction of the applied magnetic field, which reveals that the flexible La0.67Sr0.33MnO3 thin films have huge potential in the applications in future flexible multifunctional devices.

All-Inorganic Flexible Embedded Thin-Film Capacitors for Dielectric Energy Storage with High Performance.

As passive components in flexible electronics, the dielectric capacitors for energy storage are facing the challenges of flexibility and capability for integration and miniaturization. In this work, the all-inorganic flexible dielectric film capacitors have been obtained. The flexible capacitors show a desirable recoverable energy density ( Wrec) of 40.6 J/cm3 and a good energy efficiency (η) of 68.9%. Moreover, they have no obvious deterioration on both the Wrec and η after 104 times of mechanical bending cycles or under the bending state with a curvature radius of 4 mm. Besides, the outstanding stability of the capacitors against cycle fatigue over fast 106 charge-discharge cycles is demonstrated. Most importantly, they work properly at a wide temperature range from -120 to 150 °C with Wrec > 15 J/cm3 and η > 70%. These fascinating performances endow the flexible capacitors with huge potential application in the future "microenergy storage" system in flexible electronics.

A Strategy to Modulate the Bending Coupled Microwave Magnetism in Nanoscale Epitaxial Lithium Ferrite for Flexible Spintronic Devices.

With the development of flexible electronics, the mechanical flexibility of functional materials is becoming one of the most important factors that needs to be considered in materials selection. Recently, flexible epitaxial nanoscale magnetic materials have attracted increasing attention for flexible spintronics. However, the knowledge of the bending coupled dynamic magnetic properties is poor when integrating the materials in flexible devices, which calls for further quantitative analysis. Herein, a series of epitaxial LiFe5O8 (LFO) nanostructures are produced as research models, whose dynamic magnetic properties are characterized by ferromagnetic resonance (FMR) measurements. LFO films with different crystalline orientations are discussed to determine the influence from magnetocrystalline anisotropy. Moreover, LFO nanopillar arrays are grown on flexible substrates to reveal the contribution from the nanoscale morphology. It reveals that the bending tunability of the FMR spectra highly depends on the demagnetization field energy of the sample, which is decided by the magnetism and the shape factor in the nanostructure. Following this result, LFO film with high bending tunability of microwave magnetic properties, and LFO nanopillar arrays with stable properties under bending are obtained. This work shows guiding significances for the design of future flexible tunable/stable microwave magnetic devices.

Flexible Lithium Ferrite Nanopillar Arrays for Bending Stable Microwave Magnetism.

Recent development in magnetic nanostructures has promoted flexible electronics into the application of integrated devices. However, the magnetic properties of flexible devices strongly depend on the bending states. In order to realize the design of new flexible devices driven by an external field, the first step is to make the magnetic properties insensitive to the bending. Herein, a series of LiFe5O8 nanopillar arrays were fabricated, whose microwave magnetic properties can be modulated by tuning the nanostructure. This work demonstrates that nanostructure engineering is useful to control the bending sensitivity of microwave magnetism and further design stable flexible devices.

Epitaxial Lift-Off of Centimeter-Scaled Spinel Ferrite Oxide Thin Films for Flexible Electronics.

Mechanical flexibility of electronic devices has attracted much attention from research due to the great demand in practical applications and rich commercial value. Integration of functional oxide materials in flexible polymer materials has proven an effective way to achieve flexibility of functional electronic devices. However, the chemical and mechanical incompatibilities at the interfaces of dissimilar materials make it still a big challenge to synthesize high-quality single-crystalline oxide thin film directly on flexible polymer substrates. This study reports an improved method that is employed to successfully transfer a centimeter-scaled single-crystalline LiFe5 O8 thin film on polyimide substrate. Structural characterizations show that the transferred films have essentially no difference in comparison with the as-grown films with respect to the microstructure. In particular, the transferred LiFe5 O8 films exhibit excellent magnetic properties under various mechanical bending statuses and show excellent fatigue properties during the bending cycle tests. These results demonstrate that the improved transfer method provides an effective way to compose single-crystalline functional oxide thin films onto flexible substrates for applications in flexible and wearable electronics.

Flexible Quasi-Two-Dimensional CoFe2O4 Epitaxial Thin Films for Continuous Strain Tuning of Magnetic Properties.

Epitaxial thin films of CoFe2O4 (CFO) have successfully been transferred from a SrTiO3 substrate onto a flexible polyimide substrate. By bending the flexible polyimide, different levels of uniaxial strain are continuously introduced into the CFO epitaxial thin films. Unlike traditional epitaxial strain induced by substrates, the strain from bending will not suffer from critical thickness limitation, crystalline quality variation, and substrate clamping, and more importantly, it provides a more intrinsic and reliable way to study strain-controlled behaviors in functional oxide systems. It is found that both the saturation magnetization and coercivity of the transferred films can be changed over the bending status and show a high accord with the movement of the curvature bending radius of the polyimide substrate. This reveals that the mechanical strain plays a critical role in tuning the magnetic properties of CFO thin films parallel and perpendicular to the film plane direction.