PBr3 adsorption on a chlorinated Si(100) surface with mono- and bivacancies.

For the most precise incorporation of single impurities in silicon, which is utilized to create quantum devices, a monolayer of adatoms on the Si(100) surface and a dopant-containing molecule are used. Here, we studied the interaction of phosphorus tribromide with a chlorine monolayer with mono- and bivacancies using a scanning tunneling microscope (STM) at 77 K. The combination of different halogens in the molecule and the adsorbate layer enabled unambiguous identification of the structures after PBr3 dissociation on Si(100)-Cl. A Cl monolayer was exposed to PBr3 in the STM chamber, which allows us to compare the same surface areas before and after PBr3 adsorption. As a result of this comparison, we detected small changes in the chlorine layer and unraveled the molecular fragments filling mono- and bivacancies. Using density functional theory, we found that the phosphorus atom occupies a bridge position after dissociation of the PBr3 molecule, which primarily bonds with silicon in Cl bivacancies. These findings provide insight into the interaction of a dopant-containing molecule with an adsorbate monolayer on Si(100) and can be applied to improve the process of single impurity incorporation into silicon.

New insights into the structure of the Ag(111)-p(4 × 4)-O phase: high-resolution STM and DFT study.

The atomic structure of the Ag(111)-p(4 × 4)-O phase was reexamined with scanning tunneling microscopy (STM) and density functional theory. We discovered two different phases with the same (4 × 4) periodicity and demonstrated that the accepted Ag6 model is incompatible with high-resolution oxygen-sensitive STM images. Using bias dependencies of the STM images, we have shown that the p(4 × 4) phase is highly nonuniform, with local oxygen coverage varying from 1/8 ML up to 1/2 ML.

Enhancing the reactivity of Si(100)-Cl toward PBr3 by charging Si dangling bonds.

The interaction of the PBr3 molecule with Si dangling bonds (DBs) on a chlorinated Si(100) surface was studied. The DBs were charged in a scanning tunneling microscope (STM) and then exposed to PBr3 directly in the STM chamber. Uncharged DBs rarely react with molecules. On the contrary, almost all positively charged DBs were filled with molecule fragments. As a result of the PBr3 interaction with the positively charged DB, the molecule dissociated into PBr2 and Br with the formation of a Si-Br bond and PBr2 desorption. These findings show that charged DBs significantly modify the reactivity of the surface toward PBr3. Additionally, we calculated PH3 adsorption on a Si(100)-2 × 1-H surface with DBs and found that the DB charge also has a significant impact. As a result, we demonstrated that the positively charged DB with a doubly unoccupied state enhances the adsorption of molecules with a lone pair of electrons.

Vacancy diffusion on a brominated Si(100) surface: Critical effect of the dangling bond charge state.

Silicon dangling bonds (DBs) on an adsorbate-covered Si(100) surface can be created in a scanning tunneling microscope (STM) with high precision required for a number of applications. However, vacancies containing DBs can diffuse, disrupting precisely created structures. In this work, we study the diffusion of Br vacancies on a Si(100)-2 × 1-Br surface in an STM under typical imaging conditions. In agreement with previous work, Br vacancies diffuse at a positive sample bias voltage. Here, we demonstrated that only vacancies containing a positively charged DB hop across the two atoms of a single Si dimer, while vacancies containing neutral and negatively charged DBs do not. Calculations based on density functional theory confirmed that positively charged Br (and Cl) vacancies have a minimum activation barrier. We propose that diffusion operates by both one-electron and two-electron mechanisms depending on the applied voltage. Our results show that the DB charge has a critical effect on the vacancy diffusion. This effect should be taken into account when imaging surface structures with charged DBs as well as when studying the diffusion of other atoms and molecules on the Si(100) surface with vacancies in an adsorbate layer.

Adsorption of molecular oxygen on the Ag(111) surface: A combined temperature-programmed desorption and scanning tunneling microscopy study.

The adsorption of O2 on Ag(111) between 300 and 500 K has been studied with temperature-programmed desorption (TPD) and scanning tunneling microscopy (STM). At the first stage of adsorption, the disordered local oxide phase (commonly looking in STM as an array of black spots) is formed on the surface irrespective of the substrate temperature. The maximum concentration of black spots was found to be ≈0.11 ML, which corresponds to an oxygen coverage of ≈0.66 ML. Taking into account that the nucleation of the Ag(111)-p(4 × 4)-O phase starts after the saturation of the disordered phase, one can conclude that its coverage is at least not less than 0.66 ML. The analysis of STM and TPD data shows that the thermodesorption peak (m/e = 32) at 570 K is related exclusively to the decomposition of the p(4 × 4) phase, while the local oxide phase does not contribute to desorption.

Adsorption of O_{2} on Ag(111): Evidence of Local Oxide Formation.

The atomic structure of the disordered phase formed by oxygen on Ag(111) at low coverage is determined by a combination of low-temperature scanning tunneling microscopy and density functional theory. We demonstrate that the previous assignment of the dark objects in STM to chemisorbed oxygen atoms is incorrect and incompatible with trefoil-like structures observed in atomic-resolution images in current work. In our model, each object is an oxidelike ring formed by six oxygen atoms around the vacancy in Ag(111).