Embedded Micro-detectors for EUV Exposure Control in FinFET CMOS Technology.

An on-wafer micro-detector for in situ EUV (wavelength of 13.5 nm) detection featuring FinFET CMOS compatibility, 1 T pixel and battery-less sensing is demonstrated. Moreover, the detection results can be written in the in-pixel storage node for days, enabling off-line and non-destructive reading. The high spatial resolution micro-detectors can be used to extract the actual parameters of the incident EUV on wafers, including light intensity, exposure time and energy, key to optimization of lithographic processes in 5 nm FinFET technology and beyond.

Multifunctional Ion-Sensitive Floating Gate Fin Field-Effect Transistor with Three-Dimensional Nanoseaweed Structure by Glancing Angle Deposition Technology.

A multifunctional ion-sensitive floating gate Fin field-effect transistor (ISFGFinFET) for hydrogen and sodium detection is demonstrated. The ISFGFinFET comprises a FGFET and a sensing film, both of which are used to detect and improve sensitivity. The sensitivity of the ISFGFinFET can be adjusted by modulating the coupling effect of the FG. A nanoseaweed structure is fabricated via glancing angle deposition (GLAD) technology to obtain a large sensing area to enhance the sensitivity for hydrogen ion detection. A sensitivity of 266 mV per pH can be obtained using a surface area of 3.28 mm2 . In terms of sodium ion detection, a calix[4]arene sensing film to monitor sodium ions, obtaining a Na+ sensitivity of 432.7 mV per pNa, is used. In addition, the ISFGFinFET demonstrates the functionality of multiple ions detection simultaneously. The sensor arrays composed of 3 × 3 pixels are demonstrated, each of which comprise of an FGFET sensor and a transistor. Furthermore, 16 × 16 arrays with a decoder and other peripheral circuits are constructed and simulated. The performance of the proposed ISFGFinFET is competitive with that of other state-of-the-art ion sensors.

An Early Detection Circuit for Endurance Enhancement of Backfilled Contact Resistive Random Access Memory Array.

As one of the most promising embedded non-volatile storage solutions for advanced CMOS modules, resistive random access memory's (RRAM) applications depend highly on its cyclability. Through detailed analysis, links have been found between noise types, filament configurations and the occurrence of reset failure during cycling test. In addition, a recovery treatment is demonstrated to restore the cyclability of RRAM. An early detection circuit for vulnerable cells in an array is also proposed for further improving the overall endurance of an RRAM array. Lifetime of RRAM can be extended to over 10 k cycles without fail bits in an array.

Detectors Array for In Situ Electron Beam Imaging by 16-nm FinFET CMOS Technology.

A novel in situ imaging solution and detectors array for the focused electron beam (e-beam) are the first time proposed and demonstrated. The proposed in-tool, on-wafer e-beam detectors array features full FinFET CMOS logic compatibility, compact 2 T pixel structure, fast response, high responsivity, and wide dynamic range. The e-beam imaging pattern and detection results can be further stored in the sensing/storage node without external power supply, enabling off-line electrical reading, which can be used to rapidly provide timely feedback of the key parameters of the e-beam on the projected wafers, including dosage, accelerating energy, and intensity distributions.