1.
Materials (Basel)
; 15(7)2022 Mar 24.
Artículo
en Inglés
| MEDLINE
| ID: mdl-35407734
RESUMEN
TiN/AlOx:Ti/TaOx/TiN memory devices using bilayer resistive switching memory demonstrated excellent durability and capability of QLC (quad-level cell) memory devices. The best nonvolatile memory characteristics with the lowest operation current and optimized 4 bit/cell states were obtained using the Incremental Step Pulse Programming (ISPP) algorithm in array. As a result, a superior QLC reliability (cycle endurance > 1 k at each level of the QLC, data retention > 2 h at 125 °C) for all the 4 bits/cell operations was achieved in sub-µm scaled RRAM (resistive random access memory) devices.