Compact and fast photonic crystal silicon optical modulators.

We demonstrate the first sub-100 µm silicon Mach-Zehnder modulators (MZMs) that operate at >10 Gb/s, by exploiting low-dispersion slow-light in lattice-shifted photonic crystal waveguides (LSPCWs). We use two LSPCW-MZM structures, one with LSPCWs in both arms of the MZM, and the other with an LSPCW in only one of the arms. Using the first structure we demonstrate 10 Gb/s operation with a operating bandwidth of 12.5 nm, in a device with a phase-shifter length of only 50 µm. Using the second structure, owing to a larger group index as well as lower spectral noise, we demonstrate 40 Gb/s operation with a phase-shifter length of only 90 µm, which is more than an order-of-magnitude shorter than most 40 Gb/s MZMs.

Nonlinear enhancement in photonic crystal slow light waveguides fabricated using CMOS-compatible process.

We have studied low-dispersion slow light and its nonlinear enhancement in photonic crystal waveguides. In this work, we fabricated the waveguides using Si CMOS-compatible process. It enables us to integrate spotsize converters, which greatly simplifies the optical coupling from fibers as well as demonstration of the nonlinear enhancement. Two-photon absorption, self-phase modulation and four-wave mixing were observed clearly for picosecond pulses in a 200-µm-long device. In comparison with Si wire waveguides, a 60-120 fold higher nonlinearity was evaluated for a group index of 51. Unique intensity response also occurred due to the specific transmission spectrum and enhanced nonlinearities. Such slow light may add various functionalities in Si photonics, while loss reduction is desired for ensuring the advantage of slow light.

10 Gb/s operation of photonic crystal silicon optical modulators.

We report the first experimental demonstration of 10 Gb/s modulation in a photonic crystal silicon optical modulator. The device consists of a 200 µm-long SiO2-clad photonic crystal waveguide, with an embedded p-n junction, incorporated into an asymmetric Mach-Zehnder interferometer. The device is integrated on a SOI chip and fabricated by CMOS-compatible processes. With the bias voltage set at 0 V, we measure a V(π)L < 0.056 V∙cm. Optical modulation is demonstrated by electrically driving the device with a 2(31) - 1 bit non-return-to-zero pseudo-random bit sequence signal. An open eye pattern is observed at bitrates of 10 Gb/s and 2 Gb/s, with and without pre-emphasis of the drive signal, respectively.