Partial Order-Disorder Transition Driving Closure of Band Gap: Example of Thermoelectric Clathrates.

In the quest for efficient thermoelectrics, semiconducting behavior is a targeted property. Yet, this is often difficult to achieve due to the complex interplay between electronic structure, temperature, and disorder. We find this to be the case for the thermoelectric clathrate Ba_{8}Al_{16}Si_{30}: Although this material exhibits a band gap in its ground state, a temperature-driven partial order-disorder transition leads to its effective closing. This finding is enabled by a novel approach to calculate the temperature-dependent effective band structure of alloys. Our method fully accounts for the effects of short-range order and can be applied to complex alloys with many atoms in the primitive cell, without relying on effective medium approximations.

Low-Energy Phases of Bi Monolayer Predicted by Structure Search in Two Dimensions.

We employ an ab-initio structure search algorithm to explore the configurational space of bismuth in quasi-two dimensions. A confinement potential is introduced to restrict the movement of atoms within a predefined thickness to find the stable and metastable forms of monolayer Bi. In addition to the two known low-energy structures (puckered monoclinic and buckled hexagonal), our calculations predict three new phases: α, ß, and γ. Each phase exhibits peculiar electronic properties, ranging from metallic (α and γ) to semiconducting (puckered monoclinic, buckled hexagonal, and ß) monolayers. Topologically nontrivial features are predicted for buckled hexagonal and γ phases. We also remark on the role of 5d electrons on the electronic properties of Bi monolayer. We conclude that Bi provides a rich playground to study distortion-mediated metal-insulator phase transitions in quasi-2D.

Effect of Ions on H-Bond Structure and Dynamics at the Quartz(101)-Water Interface.

We use ab initio molecular dynamics simulations to study the effect of ions on the structure and dynamics of the quartz(101)-water interface. We study several IA (Na+, Rb+) and IIA (Mg2+, Sr2+) cations, with Cl- as counterion, adsorbed onto acidic, neutral, and basic surface configurations at 300 and 373 K. We find that both cations and anions can bond directly to the surface and perturb the local H-bond network. The adsorbed ions promote the formation of intrasurface H-bonds, as shown by vibrational density of states and orientations of the surface silanols. Both local and global structural correlations of the interfacial H-bond network are studied using a structural definition of the H-bond and a network correlation function. We find the ions' effect on the solvent structure exhibits a complex dependence on specific surface interactions. The structure-making properties of ions are enhanced at the quartz surface, particularly for ions adsorbed without a complete hydration shell, and the structuring effect extends beyond the first solvation shell. The ions have a lesser effect on solvent structure in solution, especially in the presence of counterions. In fact, cations that are the greatest "structure makers" at the surface are the greatest "structure breakers" when in solution with a counterion. Therefore, we find the ions cannot be simply classified as "structure making" or "structure breaking". We discuss the implications of these findings for the effect of ions on the dissolution rate, surface charge, and solvent structure.

Electrically tunable multiple Dirac cones in thin films of the (LaO)2(SbSe2)2 family of materials.

Two-dimensional Dirac physics has aroused great interests in condensed matter physics ever since the discovery of graphene and topological insulators. The ability to control the properties of Dirac cones, such as bandgap and Fermi velocity, is essential for various new phenomena and the next-generation electronic devices. On the basis of first-principles calculations and an analytical effective model, we propose a new Dirac system with eight Dirac cones in thin films of the (LaO)2(SbSe2)2 family of materials, which has the advantage in its tunability: the existence of gapless Dirac cones, their positions, Fermi velocities and anisotropy all can be controlled by an experimentally feasible electric field. We identify layer-dependent spin texture induced by spin-orbit coupling as the underlying physical reason for electrical tunability of this system. Furthermore, the electrically tunable quantum anomalous Hall effect with a high Chern number can be realized by introducing magnetization into this system.

Metal-substituted Ti8C12 metallocarbohedrynes: toward less reactive clusters as building blocks of cluster-assembled materials.

To form cluster-assembled materials, the clusters should have low reactivity and be characterized by a closed-shell electronic configuration with a large gap between the highest occupied and the lowest unoccupied molecular orbitals (HOMO-LUMO). Using spin-polarized density functional theory calculations, we investigate the M-substituted Ti(8)C(12) metallocarbohedrynes to search for less reactive clusters as building blocks for cluster-assembled materials (M = Be, Mg, Ca, Sr, Ba and Sc, Y). The selected atoms in the correct stoichiometry would produce a metallocarbohedryne that is isoelectronic with the Ti(8)C(12)(2+), which has a closed-shell electronic configuration and an enhanced HOMO-LUMO gap of 1.735 eV. According to our results, the HOMO-LUMO gaps of the M-substituted Ti(8)C(12) metallocarbohedrynes are in the range of 0.715-0.979 eV for the case of Be, Mg, Ca, Sr and Ba and in the range of 0.865-1.294 eV for the case of Sc and Y. Among all the M-substituted metallocarbohedrynes we consider here, one of the isomers of Ti(6)Sc(2)C(12) is not only energetically more favorable but also exhibits a larger HOMO-LUMO gap of 1.294 eV. This result indicates that the Ti(6)Sc(2)C(12)(4) metallocarbohedryne should be less reactive than the Ti(8)C(12) metallocarbohedryne which has a narrow HOMO-LUMO gap of 0.146 eV. Moreover, we show that the intercluster interaction between two individual Ti(6)Sc(2)C(12)(4) metallocarbohedrynes is relatively weak compared to the Ti(8)C(12) dimer.

Impurity state and variable range hopping conduction in graphene.

The variable range hopping theory, as formulated for exponentially localized impurity states, does not necessarily apply in the case of graphene with covalently attached impurities. We analyze the localization of impurity states in graphene using the nearest-neighbor, tight-binding model of an adatom-graphene system with Green's function perturbation methods. The amplitude of the impurity state wave function is determined to decay as a power law with exponents depending on sublattice, direction, and the impurity species. We revisit the variable range hopping theory in view of this result and find that the conductivity depends as a power law of the temperature with an exponent related to the localization of the wave function. We show that this temperature dependence is in agreement with available experimental results.

Gate-voltage control of oxygen diffusion on graphene.

We analyze the diffusion of oxygen atoms on graphene and its dependence on the carrier density controlled by a gate voltage. We use density functional theory to determine the equilibrium adsorption sites, the transition state, and the attempt frequency for different carrier densities. The ease of diffusion is strongly dependent on carrier density. For neutral graphene, we calculate a barrier of 0.73 eV; however, upon electron doping the barrier decreases almost linearly to reach values as low as 0.15 eV for densities of -7.6×10(13) cm(-2). This implies an increase of more than 9 orders of magnitude in the diffusion coefficient at room temperature. This dramatic change is due to a combined effect of bonding reduction in the equilibrium state and bonding increase at the transition state and can be used to control the patterning of oxidized regions by an adequate variation of the gate voltage.

Multiple isomers in the photoelectron spectra of small mono-niobium carbide clusters.

We calculate the photoelectron spectrum of small mono-niobium carbide clusters (NbC(n)) using density functional theory for clusters with n = 2-7 and the symmetry adapted cluster configuration interaction method for the smallest clusters (n = 2-4). Theoretical spectra of a single structure cannot explain all peaks present in the spectrum measured by Zhai et al. [J. Chem. Phys. 115, 5170 (2001)]. However, we can match all peaks in the experimental spectra if we assume that the beam contains a combination of cyclic and linear structures. This finding is even more surprising given the fact that some of the excited metastable geometries have energies as large as 0.5 eV above the ground state. Our result is confirmed by both theoretical approaches. We suggest further experiments, using additional beam cooling, to corroborate this observation.

Faster proton transfer dynamics of water on SnO2 compared to TiO2.

Proton jump processes in the hydration layer on the iso-structural TiO(2) rutile (110) and SnO(2) cassiterite (110) surfaces were studied with density functional theory molecular dynamics. We find that the proton jump rate is more than three times faster on cassiterite compared with rutile. A local analysis based on the correlation between the stretching band of the O-H vibrations and the strength of H-bonds indicates that the faster proton jump activity on cassiterite is produced by a stronger H-bond formation between the surface and the hydration layer above the surface. The origin of the increased H-bond strength on cassiterite is a combined effect of stronger covalent bonding and stronger electrostatic interactions due to differences of its electronic structure. The bridging oxygens form the strongest H-bonds between the surface and the hydration layer. This higher proton jump rate is likely to affect reactivity and catalytic activity on the surface. A better understanding of its origins will enable methods to control these rates.

Structural, electronic, optical and vibrational properties of nanoscale carbons and nanowires: a colloquial review.

This review addresses the field of nanoscience as viewed through the lens of the scientific career of Peter Eklund, thus with a special focus on nanocarbons and nanowires. Peter brought to his research an intense focus, imagination, tenacity, breadth and ingenuity rarely seen in modern science. His goal was to capture the essential physics of natural phenomena. This attitude also guides our writing: we focus on basic principles, without sacrificing accuracy, while hoping to convey an enthusiasm for the science commensurate with Peter's. The term 'colloquial review' is intended to capture this style of presentation. The diverse phenomena of condensed matter physics involve electrons, phonons and the structures within which excitations reside. The 'nano' regime presents particularly interesting and challenging science. Finite size effects play a key role, exemplified by the discrete electronic and phonon spectra of C(60) and other fullerenes. The beauty of such molecules (as well as nanotubes and graphene) is reflected by the theoretical principles that govern their behavior. As to the challenge, 'nano' requires special care in materials preparation and treatment, since the surface-to-volume ratio is so high; they also often present difficulties of acquiring an experimental signal, since the samples can be quite small. All of the atoms participate in the various phenomena, without any genuinely 'bulk' properties. Peter was a master of overcoming such challenges. The primary activity of Eklund's research was to measure and understand the vibrations of atoms in carbon materials. Raman spectroscopy was very dear to Peter. He published several papers on the theory of phonons (Eklund et al 1995a Carbon 33 959-72, Eklund et al 1995b Thin Solid Films 257 211-32, Eklund et al 1992 J. Phys. Chem. Solids 53 1391-413, Dresselhaus and Eklund 2000 Adv. Phys. 49 705-814) and many more papers on measuring phonons (Pimenta et al 1998b Phys. Rev. B 58 16016-9, Rao et al 1997a Nature 338 257-9, Rao et al 1997b Phys. Rev. B 55 4766-73, Rao et al 1997c Science 275 187-91, Rao et al 1998 Thin Solid Films 331 141-7). His careful sample treatment and detailed Raman analysis contributed greatly to the elucidation of photochemical polymerization of solid C(60) (Rao et al 1993b Science 259 955-7). He developed Raman spectroscopy as a standard tool for gauging the diameter of a single-walled carbon nanotube (Bandow et al 1998 Phys. Rev. Lett. 80 3779-82), distinguishing metallic versus semiconducting single-walled carbon nanotubes, (Pimenta et al 1998a J. Mater. Res. 13 2396-404) and measuring the number of graphene layers in a peeled flake of graphite (Gupta et al 2006 Nano Lett. 6 2667-73). For these and other ground breaking contributions to carbon science he received the Graffin Lecture award from the American Carbon Society in 2005, and the Japan Carbon Prize in 2008. As a material, graphite has come full circle. The 1970s renaissance in the science of graphite intercalation compounds paved the way for a later explosion in nanocarbon research by illuminating many beautiful fundamental phenomena, subsequently rediscovered in other forms of nanocarbon. In 1985, Smalley, Kroto, Curl, Heath and O'Brien discovered carbon cage molecules called fullerenes in the soot ablated from a rotating graphite target (Kroto et al 1985 Nature 318 162-3). At that time, Peter's research was focused mainly on the oxide-based high-temperature superconductors. He switched to fullerene research soon after the discovery that an electric arc can prepare fullerenes in bulk quantities (Haufler et al 1990 J. Phys. Chem. 94 8634-6). Later fullerene research spawned nanotubes, and nanotubes spawned a newly exploding research effort on single-layer graphene. Graphene has hence evolved from an oversimplified model of graphite (Wallace 1947 Phys. Rev. 71 622-34) to a new member of the nanocarbon family exhibiting extraordinary electronic properties. Eklund's career spans this 35-year odyssey.

Surface protonation at the rutile (110) interface: explicit incorporation of solvation structure within the refined MUSIC model framework.

The detailed solvation structure at the (110) surface of rutile (alpha-TiO2) in contact with bulk liquid water has been obtained primarily from experimentally verified classical molecular dynamics (CMD) simulations of the ab initio-optimized surface in contact with SPC/E water. The results are used to explicitly quantify H-bonding interactions, which are then used within the refined MUSIC model framework to predict surface oxygen protonation constants. Quantum mechanical molecular dynamics (QMD) simulations in the presence of freely dissociable water molecules produced H-bond distributions around deprotonated surface oxygens very similar to those obtained by CMD with nondissociable SPC/E water, thereby confirming that the less computationally intensive CMD simulations provide accurate H-bond information. Utilizing this H-bond information within the refined MUSIC model, along with manually adjusted Ti-O surface bond lengths that are nonetheless within 0.05 A of those obtained from static density functional theory (DFT) calculations and measured in X-ray reflectivity experiments (as well as bulk crystal values), give surface protonation constants that result in a calculated zero net proton charge pH value (pHznpc) at 25 degrees C that agrees quantitatively with the experimentally determined value (5.4+/-0.2) for a specific rutile powder dominated by the (110) crystal face. Moreover, the predicted pHznpc values agree to within 0.1 pH unit with those measured at all temperatures between 10 and 250 degrees C. A slightly smaller manual adjustment of the DFT-derived Ti-O surface bond lengths was sufficient to bring the predicted pHznpcvalue of the rutile (110) surface at 25 degrees C into quantitative agreement with the experimental value (4.8+/-0.3) obtained from a polished and annealed rutile (110) single crystal surface in contact with dilute sodium nitrate solutions using second harmonic generation (SHG) intensity measurements as a function of ionic strength. Additionally, the H-bond interactions between protolyzable surface oxygen groups and water were found to be stronger than those between bulk water molecules at all temperatures investigated in our CMD simulations (25, 150 and 250 degrees C). Comparison with the protonation scheme previously determined for the (110) surface of isostructural cassiterite (alpha-SnO2) reveals that the greater extent of H-bonding on the latter surface, and in particular between water and the terminal hydroxyl group (Sn-OH) results in the predicted protonation constant for that group being lower than for the bridged oxygen (Sn-O-Sn), while the reverse is true for the rutile (110) surface. These results demonstrate the importance of H-bond structure in dictating surface protonation behavior, and that explicit use of this solvation structure within the refined MUSIC model framework results in predicted surface protonation constants that are also consistent with a variety of other experimental and computational data.

Comparisons of multilayer H2O adsorption onto the (110) surfaces of alpha-TiO2 and SnO2 as calculated with density functional theory.

Mono- and bilayer adsorption of H2O molecules on TiO2 and SnO 2 (110) surfaces has been investigated using static planewave density functional theory (PW DFT) simulations. Potential energies and structures were calculated for the associative, mixed, and dissociative adsorption states. The DOS of the bare and hydrated surfaces has been used for the analysis of the difference between the H2O interaction with TiO2 and SnO 2 surfaces. The important role of the bridging oxygen in the H2O dissociation process is discussed. The influence of the second layer of H2O molecules on relaxation of the surface atoms was estimated.

n-Type behavior of graphene supported on Si/SiO(2) substrates.

Results are presented from an experimental and theoretical study of the electronic properties of back-gated graphene field effect transistors (FETs) on Si/SiO(2) substrates. The excess charge on the graphene was observed by sweeping the gate voltage to determine the charge neutrality point in the graphene. Devices exposed to laboratory environment for several days were always found to be initially p-type. After approximately 20 h at 200 degrees C in approximately 5 x 10(-7) Torr vacuum, the FET slowly evolved to n-type behavior with a final excess electron density on the graphene of approximately 4 x 10(12) e/cm(2). This value is in excellent agreement with our theoretical calculations on SiO(2), where we have used molecular dynamics to build the SiO(2) structure and then density functional theory to compute the electronic structure. The essential theoretical result is that the SiO(2) has a significant surface state density just below the conduction band edge that donates electrons to the graphene to balance the chemical potential at the interface. An electrostatic model for the FET is also presented that produces an expression for the gate bias dependence of the carrier density.

Van der Waals dispersion forces between dielectric nanoclusters.

Various methods are evaluated for their ability to calculate accurate van der Waals (VDW) dispersion forces between nanoclusters. We compare results for spheres using several methods: the simple Hamaker two-body method, the Lifshitz (DLP) theory with the Derjaguin approximation, the Langbein result for spheres, and our "coupled dipole method" (CDM). The assumptions and shortcomings of each method are discussed. The CDM accounts for all n-body forces, does not assume a continuous and homogeneous dielectric function in each material, accounts for the discreteness of atoms in the particles, can be used for particles of arbitrary shape, and can exactly include the effects of various media. At present, the CDM does not account for retardation. It is shown that even for spheres, methods other than the CDM often give errors of 20% or more for VDW dispersion forces between typical dielectric materials. A related calculation for metals reveals an error in the Hamaker two-body result of nearly a factor of 2.

Fully retarded van der Waals interaction between dielectric nanoclusters.

The van der Waals (dispersion) interaction between an atom and a cluster or between two clusters at large separation is calculated by considering each cluster as a point particle, characterized by a polarizability tensor. For the extreme limit of very large separation, the fully retarded regime, one needs to know just the static polarizability in order to determine the interaction. This polarizability is evaluated by including all many-body (MB) intracluster atomic interactions self-consistently. The results of these calculations are compared with those obtained from various alternative methods. One is to consider each cluster as a collection of many atoms and evaluate the sum of two-body interatomic interactions, a common assumption. An alternative method is to include three-body atomic interactions as a MB correction term in the total energy. A comparison of these results reveals that the contribution of the higher-than-three-body MB interactions is always attractive and non-negligible even at such a large separation, in contrast to common assumptions. The procedure employed is quite general and is applicable, in principle, to any shape or size of dielectric cluster. We present numerical results for clusters composed of atoms with polarizability consistent with silica, for which the higher-than-three-body MB correction term can be as high as 42% of the atomic pairwise sum. This result is quite sensitive to the anisotropy and orientation of the cluster, in contrast to the result found in the additive case. We also present a power law expansion of the total van der Waals interaction as a series of n-body interaction terms.

van der Waals forces between nanoclusters: importance of many-body effects.

van der Waals interactions between nanoclusters have been calculated with a self-consistent, coupled dipole method. The method accounts for all many-body (MB) effects. Comparison is made between the exact potential energy, V, and the values obtained with two alternative methods: the sum of two-body interactions and the sum of two-body and three-body interactions. For all cases considered, the three-body term alone does not accurately represent the MB contributions to V. MB contributions are especially large for shape-anisotropic clusters.

Scanning tunneling microscopy chemical signature of point defects on the MoS2(0001) surface.

Using ab initio calculations, we have studied the modification of the electronic structure of the MoS2(0001) surface by several point defects: a surface S vacancy and different transition metal atoms substituting a S atom (Pd, Au, Fe, and V). With a S vacancy, a gap state appears with weight mostly on the Mo and S atoms surrounding the vacancy. The substitutional atoms of complete d band (Pd and Au) do not present magnetic polarization and slightly modify the DOS near the Fermi energy. On the other hand, the incomplete d band atoms (Fe and V) present spin polarization and modify significantly the states near the band edges. From calculated STM images and STS curves, we show that this chemical signature can be measured and used to characterize the surface defects of the substrate which are suitable nucleation centers for nanocluster growth.