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Nanomaterials (Basel) ; 13(20)2023 Oct 12.
Artículo en Inglés | MEDLINE | ID: mdl-37887904

RESUMEN

In this paper, we present a 6-bit phase shifter designed and fabricated using the 150 nm GaN HEMT process. The designed phase shifter operates within the n260 (37~40 GHz) band, as specified in the 5G NR standard, and employs the structure of a switched-filter phase shifter. By serially connecting six single-bit phase shifters, ranging from 180° to 5.625°, the designed phase shifter achieves a phase range of 360°. The fabricated phase shifter exhibits a minimum insertion loss of 5 dB and an RMS phase error of less than 5.36° within the 37 to 40 GHz. This phase shifter is intended for seamless integration with high-power RF circuits.

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