RESUMEN
This study investigates the effects of annealing on the tunnel magnetoresistance (TMR) ratio in CoFeB/MgO/CoFeB-based magnetic tunnel junctions (MTJs) with different capping layers and correlates them with microstructural changes. It is found that the capping layer plays an important role in determining the maximum TMR ratio and the corresponding annealing temperature (Tann). For a Pt capping layer, the TMR reaches ~95% at a Tann of 350 °C, then decreases upon a further increase in Tann. A microstructural analysis reveals that the low TMR is due to severe intermixing in the Pt/CoFeB layers. On the other hand, when introducing a Ta capping layer with suppressed diffusion into the CoFeB layer, the TMR continues to increase with Tann up to 400 °C, reaching ~250%. Our findings indicate that the proper selection of a capping layer can increase the annealing temperature of MTJs so that it becomes compatible with the complementary metal-oxide-semiconductor backend process.
RESUMEN
A slim beam deflector that satisfies both a large steering angle and a large area can be very useful in various applications. However, a smaller electrode pitch for a large steering angle and enlargement of its area are trade-off relations due to the limited number of control channels in an electrically tunable beam deflector system. For a large steering angle in the active area where actual diffraction occurs, an indium tin oxide electrode of 2 µm pitch was implemented through a stepper lithography. The via-hole process was developed to expand the reduced active area due to the small electrode pitch. We developed a beam deflector with 7200 controllable channels in an active area of 14.4mm×14.4mm. The maximum steering angle is 7.643° at a wavelength of 532 nm.
