Impact of tensile strain on low Sn content GeSn lasing.

In recent years much effort has been made to increase the Sn content in GeSn alloys in order to increase direct bandgap charge carrier recombination and, therefore, to reach room temperature lasing. While being successful for the former, the increase of Sn content is detrimental, leading to increased defect concentrations and a lower thermal budget regarding processing. In this work we demonstrate strong photoluminescence enhancement in low Sn content Ge0.94Sn0.06 layers by implementing tensile strain. Fitting of the calculated photoluminescence spectra to reproduce our experimental results indicates a strain of ~1.45%, induced via an SiNx stressor layer, which is strong enough to transform the investigated layer into a direct bandgap semiconductor. Moreover, theoretical calculations, using the 8-band k·p model, show the advantages of using low Sn content tensile strained GeSn layers in respect to gain and lasing temperature. We show that low Sn content GeSn alloys have a strong potential to enable efficient room temperature lasers on electronic-photonic integrated circuits.

Investigation of carrier confinement in direct bandgap GeSn/SiGeSn 2D and 0D heterostructures.

Since the first demonstration of lasing in direct bandgap GeSn semiconductors, the research efforts for the realization of electrically pumped group IV lasers monolithically integrated on Si have significantly intensified. This led to epitaxial studies of GeSn/SiGeSn hetero- and nanostructures, where charge carrier confinement strongly improves the radiative emission properties. Based on recent experimental literature data, in this report we discuss the advantages of GeSn/SiGeSn multi quantum well and quantum dot structures, aiming to propose a roadmap for group IV epitaxy. Calculations based on 8-band k∙p and effective mass method have been performed to determine band discontinuities, the energy difference between Γ- and L-valley conduction band edges, and optical properties such as material gain and optical cross section. The effects of these parameters are systematically analyzed for an experimentally achievable range of Sn (10 to 20 at.%) and Si (1 to 10 at.%) contents, as well as strain values (-1 to 1%). We show that charge carriers can be efficiently confined in the active region of optical devices for experimentally acceptable Sn contents in both multi quantum well and quantum dot configurations.

Advanced GeSn/SiGeSn Group IV Heterostructure Lasers.

Growth and characterization of advanced group IV semiconductor materials with CMOS-compatible applications are demonstrated, both in photonics. The investigated GeSn/SiGeSn heterostructures combine direct bandgap GeSn active layers with indirect gap ternary SiGeSn claddings, a design proven its worth already decades ago in the III-V material system. Different types of double heterostructures and multi-quantum wells (MQWs) are epitaxially grown with varying well thicknesses and barriers. The retaining high material quality of those complex structures is probed by advanced characterization methods, such as atom probe tomography and dark-field electron holography to extract composition parameters and strain, used further for band structure calculations. Special emphasis is put on the impact of carrier confinement and quantization effects, evaluated by photoluminescence and validated by theoretical calculations. As shown, particularly MQW heterostructures promise the highest potential for efficient next generation complementary metal-oxide-semiconductor (CMOS)-compatible group IV lasers.

SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters.

SiGeSn ternaries are grown on Ge-buffered Si wafers incorporating Si or Sn contents of up to 15 at%. The ternaries exhibit layer thicknesses up to 600 nm, while maintaining a high crystalline quality. Tuning of stoichiometry and strain, as shown by means of absorption measurements, allows bandgap engineering in the short-wave infrared range of up to about 2.6 µm. Temperature-dependent photoluminescence experiments indicate ternaries near the indirect-to-direct bandgap transition, proving their potential for ternary-based light emitters in the aforementioned optical range. The ternaries' layer relaxation is also monitored to explore their use as strain-relaxed buffers, since they are of interest not only for light emitting diodes investigated in this paper but also for many other optoelectronic and electronic applications. In particular, the authors have epitaxially grown a GeSn/SiGeSn multiquantum well heterostructure, which employs SiGeSn as barrier material to efficiently confine carriers in GeSn wells. Strong room temperature light emission from fabricated light emitting diodes proves the high potential of this heterostructure approach.

High-k gate stacks on low bandgap tensile strained Ge and GeSn alloys for field-effect transistors.

We present the epitaxial growth of Ge and Ge0.94Sn0.06 layers with 1.4% and 0.4% tensile strain, respectively, by reduced pressure chemical vapor deposition on relaxed GeSn buffers and the formation of high-k/metal gate stacks thereon. Annealing experiments reveal that process temperatures are limited to 350 °C to avoid Sn diffusion. Particular emphasis is placed on the electrical characterization of various high-k dielectrics, as 5 nm Al2O3, 5 nm HfO2, or 1 nmAl2O3/4 nm HfO2, on strained Ge and strained Ge0.94Sn0.06. Experimental capacitance-voltage characteristics are presented and the effect of the small bandgap, like strong response of minority carriers at applied field, are discussed via simulations.

Freshwater mudsnail (Potamopyrgus antipodarum) estrogen receptor: identification and expression analysis under exposure to (xeno-)hormones.

Molluscs are raising attention as ecotoxicological test organisms due to their high diversity and ecological importance. The ovoviviparous prosobranch gastropod Potamopyrgus antipodarum (freshwater mudsnail) responds very sensitively to xenobiotics and has therefore been proposed as OECD standard test organism. Endocrine disrupting chemicals influence the reproduction of P. antipodarum, which can be assessed by embryo numbers in the brood pouch. However, the knowledge about the endocrine system of P. antipodarum is rather limited. The aim of this study was to identify an estrogen receptor in the endocrine system of P. antipodarum and to investigate if this receptor is differentially expressed under exposure to (xeno-)hormones (17α-ethinylestradiol, bisphenol A and 17α-methyltestosterone). The DNA-binding domain of the identified ER-like transcript has an amino acid identity of 92 percent compared to the ER of the gastropod Nucella lapillus (84 percent to human ERα) and 83 percent in the ligand binding domain (38 percent to human ERα). Furthermore, the P. antipodarum ER is transcriptionally regulated as shown by quantitative real-time PCRs of (xeno-)hormone exposed snails. 17α-ethinylestradiol and bisphenol A exposure resulted in a transitory ER-mRNA increase while17α-methyltestosterone caused a transitory reduction of ER-mRNA. In addition the solvent dimethyl sulfoxide had also a modulating effect on the receptor.

Imposex development in Nucella lapillus--evidence for the involvement of retinoid X receptor and androgen signalling pathways in vivo.

Imposex in female gastropods is a widely documented masculinisation phenomenon in response to tributyltin (TBT) exposure. Although it is generally accepted that imposex is a case of endocrine disruption the underlying mechanisms are controversially discussed with aromatase inhibition and retinoid X receptor (RXR) signalling pathways as two conflicting hypotheses. Hence, we performed injection experiments with the marine dogwhelk Nucella lapillus. As expected TBT induced imposex in all test specimens while the natural RXR ligand 9 cis-retinoic acid did not cause significant effects. Additionally, TBT effects were suppressed if the organotin compound was simultaneously injected with an androgen receptor inhibitor (cyproterone acetate) but not if co-administered with the synthetic RXR antagonist HX531. In contrast, the injection of the RXR agonist HX630 resulted in imposex development in nearly 100% females. Therefore, the results provide evidence for the involvement of the RXR and the androgen signalling pathway. Further investigations are necessary to resolve the biochemical mechanism of imposex development.

Reproductive toxicity of bisphenol A and cadmium in Potamopyrgus antipodarum and modulation of bisphenol A effects by different test temperature.

An OECD initiative for the development of mollusc-based toxicity tests for endocrine disrupters and other chemicals has recommended three test species with respective test designs for further standardisation. Preparing a subsequent pre-validation study we performed a reproduction test with Potamopyrgus antipodarum, determining the concentration range of the selected test substances, bisphenol A (BPA) and cadmium (Cd). At 16 °C, the recommended test temperature, the number of embryos in the brood pouch was increased by BPA and decreased by Cd (NOEC: 20 µg BPA/L and 1 µg Cd/L). Coinstantaneous BPA tests at 7 °C and 25 °C demonstrated a temperature dependency of the response, resulting in lower NOECs (5 µg/L respectively). As expected, reproduction in control groups significantly varied depending on temperature. Additional observations of the brood stock showed seasonal fluctuations in reproduction under constant laboratory conditions. The recommended temperature range and test conditions have to be further investigated.