RESUMEN
A high speed solid-state framing camera has been developed which can operate in interferometric mode. This camera measures the change in the index of refraction of a semiconductor when x-rays are incident upon it. This instrument uses an x-ray transmission grating/mask in front of the semiconductor to induce a corresponding phase grating in the semiconductor which can then be measured by an infrared probe beam. The probe beam scatters off of this grating, enabling a measure of the x-ray signal incident on the semiconductor. In this particular instrument, the zero-order reflected probe beam is attenuated and interfered with the diffracted orders to produce an interferometric image on a charge coupled device camera of the phase change induced inside the semiconductor by the incident x-rays.
RESUMEN
We report recent progress in the development of RadOptic detectors, radiation to optical converters, that rely upon x-ray absorption induced modulation of the optical refractive index of a semiconductor sensor medium to amplitude modulate an optical probe beam. The sensor temporal response is determined by the dynamics of the electron-hole pair creation and subsequent relaxation in the sensor medium. Response times of a few ps have been demonstrated in a series of experiments conducted at the LLNL Jupiter Laser Facility (JLF). This technology will enable x-ray bang-time and fusion burn-history measurements with â¼ ps resolution.
