RESUMEN
Room temperature lateral p+-i-n+light-emitting diodes (LEDs) with photonic crystals embedded in the i-region were fabricated on structures with Ge(Si) self-assembled islands and their optical properties were investigated. The use of preliminary amorphization and solid phase epitaxy of the implanted p+and n+contact regions made it possible to reduce the impurity activation temperature from 800 °Ð¡-1100 °Ð¡ to 600 °Ð¡, which corresponds to the growth temperature of Ge(Si) islands. This resulted in a significant reduction of the detrimental effect of the high-temperature annealing used for diode formation on the intensity and spectral position of the luminescence signal from the islands. It was shown that significant enhancement (more than an order of magnitude) of room temperature electroluminescence of Ge(Si) islands in the spectral range of 1.3-1.55µm can be achieved due to their interaction with different modes of the photonic crystals. The measured radiation power of the obtained diodes in the spectral range of 1.3-1.55µm exceeds 50 pW at a pump current of 8 mA, which is an order of magnitude higher than the previously achieved values for micro-LEDs with Ge(Si) nanoislands. The obtained results open up new possibilities for the realization of silicon-based light emitting devices operating at telecommunication wavelengths.
RESUMEN
Erbium-doped low-dimensional Si films with different microstructures were grown by reactive magnetron sputtering on glass substrates by varying the deposition parameters. Their structure and chemical composition were studied by micro-Raman and Rutherford backscattering spectrometry, respectively. In this contribution the Erbium emission is studied as a function of nanocrystalline fraction and average crystal sizes and also as a function of the matrix chemical composition. We discuss the temperature dependence of the Er3+ emission as well as the possible explanations of the low Er active fraction.