RESUMEN
Monolayer (ML) Janus III-VI compounds have attracted the use of multiple competitive platforms for future-generation functional electronics, including non-volatile memories, field effect transistors, and sensors. In this work, the electronic and interfacial properties of ML Ga2STe-metal (Au, Ag, Cu, and Al) contacts are systematically investigated using first-principles calculations combined with the non-equilibrium Green's function method. The ML Ga2STe-Au/Ag/Al contacts exhibit weak electronic orbital hybridization at the interface, while the ML Ga2STe-Cu contact exhibits strong electronic orbital hybridization. The Te surface is more conducive to electron injection than the S surface in ML Ga2STe-metal contact. Quantum transport calculations revealed that when the Te side of the ML Ga2STe is in contact with Au, Ag and Cu electrodes, p-type Schottky contacts are formed. When in contact with the Al electrode, an n-type Schottky contact is formed with an electron SBH of 0.079 eV. When the S side of ML Ga2STe is in contact with Au and Al electrodes, p-type Schottky contacts are formed, and when it is in contact with Ag and Cu electrodes, n-type Schottky contacts are formed. Our study will guide the selection of appropriate metal electrodes for constructing ML Ga2STe devices.
RESUMEN
In recent years, the two-dimensional (2D) semiconductor α-In2Se3 has great potential for applications in the fields of electronics and optoelectronics due to its spontaneous iron electrolysis properties. Through ab initio electronic structure calculations and quantum transport simulations, the interface properties and transport properties of α-In2Se3/Au contacts with different polarization directions are studied, and a two-dimensional α-In2Se3 asymmetric metal contact design is proposed. When α-In2Se3 is polarized upward, it forms an n-type Schottky contact with Au. While when α-In2Se3 is polarized downward, it forms a p-type Schottky contact with Au. More importantly, significant rectification effect is found in the asymmetric Au/α-In2Se3/Au field-effect transistor. The carrier transports under positive and negative bias voltages are found to be dominated by thermionic excitation and tunneling, respectively. These findings provide guidance for the further design of 2D α-In2Se3-based transistors.
RESUMEN
The development of low-dimensional multifunctional devices has become increasingly important as the size of field-effect transistors decreases. In recent years, the two-dimensional (2D) semiconductor In2Se3 has emerged as a promising candidate for applications in the fields of electronics and optoelectronics owing to its remarkable spontaneous polarization properties. Through first-principles calculations, the effects of the polarization direction and biaxial tensile strain on the electronic and contact properties of In2Se3/Au heterostructures are investigated. The contact type of In2Se3/Au heterostructures depends on the polarization direction of In2Se3. The more charge transfers from the metal to the space charge region, the biaxial tensile strain increases. Moreover, the upward polarized In2Se3 in contact with Au maintains a constant n-type Schottky contact as the biaxial tensile strain increases, with a barrier height Φ SB,n of only 0.086 eV at 6% strain, which is close to ohmic contact. On the other hand, the downward polarized In2Se3 in contact with Au can be transformed from p-type to n-type by applying a biaxial tensile strain. Our calculation results can provide a reference for the design and fabrication of In2Se3-based field effect transistors.
RESUMEN
Spontaneous symmetry breaking in quantum phase transitions leads to a system having degenerate ground states in its broken-symmetry phase. In order to detect all possible degenerate ground states for a broken-symmetry phase, we introduce a quantum fidelity defined as an overlap measurement between a system ground state and an arbitrary reference state. If a system has N-fold degenerate ground states in a broken-symmetry phase, the quantum fidelity is shown to have N different values with respect to an arbitrarily chosen reference state. The quantum fidelity then exhibits an N-multiple bifurcation as an indicator of a quantum phase transition without knowing any detailed broken symmetry between a broken-symmetry phase and a symmetry phase as a system parameter crosses its critical value (i.e., a multiple bifurcation point). Each order parameter, characterizing a broken-symmetry phase from each degenerate ground state reveals an N-multiple bifurcation. Furthermore, it is shown that it is possible to specify how each order parameter calculated from degenerate ground states transforms under a subgroup of a symmetry group of the Hamiltonian. Examples are given through study of the quantum q-state Potts models with a transverse magnetic field by employing tensor network algorithms based on infinite-size lattices. For any q, a general relation between the local order parameters is found to clearly show the subgroup of the Z_{q} symmetry group. In addition, we systematically discuss criticality in the q-state Potts model.
