Improvement of Electrical Conductivity of In Situ Iodine-Doped Polypyrrole Film Using Atmospheric Pressure Plasma Reactor with Capillary Electrodes.

To improve the electrical conductivity of polypyrrole (PPy) nanostructure film through in situ iodine (I2) doping, this study proposes an atmospheric pressure plasma reactor (APPR) where heated I2 dopant vapor is fed through capillary electrodes that serve as electrodes for discharge ignition. A large amount of the heated I2 vapor introduced into the reactor separately from a monomer gas can be effectively activated by an intense plasma via capillary electrodes. In particular, intensive plasma is obtained by properly adjusting the bluff body position in the APPR. Based on the ICCD and OES results, the I2 vapor injected through the capillary nozzle electrode is observed to form I2 charge species. The formed I2 species could directly participate in growing in situ I2-doped PPy films. Thus, in situ I2-doped PPy nanostructure films grown using the proposed APPR exhibit higher thicknesses of 15.3 µm and good electrical conductivities, compared to the corresponding non-doped films.

Nanostructured Polyaniline Films Functionalized through Auxiliary Nitrogen Addition in Atmospheric Pressure Plasma Polymerization.

Polyaniline (PANI) was synthesized from liquid aniline, a nitrogen-containing aromatic compound, through the atmospheric pressure (AP) plasma process using a newly designed plasma jet array with wide spacing between plasma jets. To expand the area of the polymerized film, the newly proposed plasma jet array comprises three AP plasma jet devices spaced 7 mm apart in a triangular configuration and an electrodeless quartz tube capable of applying auxiliary gas in the center of the triangular plasma jets. The vaporized aniline monomer was synthesized into a PANI film using the proposed plasma array device. The effects of nitrogen gas addition on the morphological, chemical, and electrical properties of PANI films in AP argon plasma polymerization were examined. The iodine-doped PANI film was isolated from the atmosphere through encapsulation. The constant electrical resistance of the PANI film indicates that the conductive PANI film can achieve the desired resistance by controlling the atmospheric exposure time through encapsulation.