Building Block-Inspired Hybrid Perovskite Derivatives for Ferroelectric Channel Layers with Gate-Tunable Memory Behavior.

Ferroelectric photovoltaics driven by spontaneous polarization (Ps ) holds a promise for creating the next-generation optoelectronics, spintronics and non-volatile memories. However, photoactive ferroelectrics are quite scarce in single homogeneous phase, owing to the severe Ps fatigue caused by leakage current of photoexcited carriers. Here, through combining inorganic and organic components as building blocks, we constructed a series of ferroelectric semiconductors of 2D hybrid perovskites, (HA)2 (MA)n-1 Pbn Br3n+1 (n=1-5; HA=hexylamine and MA=methylamine). It is intriguing that their Curie temperatures are greatly enhanced by reducing the thickness of inorganic frameworks from MAPbBr3 (n=∞, Tc =239 K) to n=2 (Tc =310 K, ΔT=71 K). Especially, on account of the coupling of room-temperature ferroelectricity (Ps ≈1.5 µC/cm2 ) and photoconductivity, n=3 crystal wafer was integrated as channel field effect transistor that shows excellent a large short-circuit photocurrent ≈19.74 µA/cm2 . Such giant photocurrents can be modulated through manipulating gate voltage in a wide range (±60 V), exhibiting gate-tunable memory behaviors of three current states ("-1/0/1" states). We believe that this work sheds light on further exploration of ferroelectric materials toward new non-volatile memory devices.

Synthesis of Ultrathin Topological Insulator ß-Ag2 Te and Ag2 Te/WSe2 -Based High-Performance Photodetector.

ß-Ag2 Te has attracted considerable attention in the application of electronics and optoelectronics due to its narrow bandgap, high mobility, and topological insulator properties. However, it remains a significant challenge to synthesize 2D Ag2 Te because of the non-layered structure of Ag2 Te. Herein, the synthesis of large-size, ultrathin single crystal topological insulator 2D Ag2 Te via the van der Waals epitaxial method for the first time is reported. The 2D Ag2 Te crystal exhibits p-type conduction behavior with high carrier mobility of 3336 cm2 V-1 s-1 at room temperature. Taking advantage of the high mobility and perfect electron structure of Ag2 Te, the Ag2 Te/WSe2 heterojunctions are fabricated via mechanical stacking and show an ultrahigh rectification ratio of 2 × 105 . Ag2 Te/WSe2 photodetector also exhibits self-driven properties with a fast response speed (40 µs/60 µs) in the near-infrared region. High responsivity (219 mA W-1 ) and light ON/OFF ratio of 6 × 105 are obtained under the photovoltaic mode. The overall performance of the Ag2 Te/WSe2 photodetector is significantly competitive among all reported 2D photodetectors. These results indicate that 2D Ag2 Te is a promising candidate for future electronic and optoelectronic applications.

Interfacial engineering of tungstic disulfide-carbide heterojunction for high-current-density hydrogen evolution.

Developing low-cost and high-efficiency electrocatalysts to electrolyze water is an effective method for large-scale hydrogen production. For large-scale commercial applications, it is crucial to call for more efficient electrocatalysts with high-current density (≥1000 mA cm-2). However, it is challenging to simultaneously promote the large-scale production and hydrogen evolution reaction (HER) activity of these hydrogen catalysts. Herein, we report the large area tungstic disulfide-carbide (W/WS2-WC) heterojunction electrode vertically grown on an industrial-grade tungsten substrate by the solid-state synthesis method. The W/WS2-WC heterojunction electrode achieves a low overpotential of 473 mV at 1000 mA cm-2 in alkaline electrolytes.