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The burgeoning field of optoelectronic devices necessitates a mechanism that gives rise to a large contrast in the electrical and optical properties. A SmTe film with a NaCl-type structure demonstrates significant differences in resistivity (over 105) and band gap (approximately 1.45 eV) between as-deposited and annealed films, even in the absence of a structural transition. The change in the electronic structure and accompanying physical properties is attributed to a rigid-band shift triggered by a valence transition (VT) between Sm2+ and Sm3+. The stress field within the SmTe film appears closely tied to the mixed valence state of Sm, suggesting that stress is a driving force in this VT. By mixing the valence states, the formation energy of the low-resistive state decreases, providing nonvolatility. Moreover, the valence state of Sm can be regulated through annealing and device-operation processes, such as applying voltage and current pulses. This investigation introduces an approach to developing semiconductor materials for optoelectrical applications.
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The negative differential resistance (NDR) device is attracting attention because of its broad potential application in neuromorphic computing and non-volatile memory. However, only a limited range of materials show NDR and, therefore, there is less choice in material selection for NDR devices. Considering this issue, we here demonstrate a novel current controlled NDR device based on phase transformation. To the best of our knowledge, this report is the first experimental demonstration that NDR can be induced by phase transformation. We believe that the impact of this demonstration is very large, as phase transformation is the most common phenomenon in materials and consequently most materials can be reconsidered as possible candidates for NDR devices. The prototype NDR device is constructed using hydrogen absorbing metal palladium (Pd) thin-wire and the phase transformation from metal-hydride to metal is employed for the demonstration. The observed NDR property shows a strong dependence on the current sweep speed. Also, it exhibits no current polarity dependence. Therefore, the NDR device based on phase transformation is significantly different from typical NDR devices such as tunnel diodes and memristors. The prototype NDR device has been found to be very useful for evaluating the hydrogen storage properties of metals. The advantage of this analysis method is that the storage properties can be acquired just by sweeping the applied current. This demonstration offers novel directions for both the development and utilization of NDR devices.
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MnTe is considered a promising candidate for next-generation phase change materials owing to the reversible and nonvolatile phase transformation between its α and ß' phases by irradiation of a nanosecond laser or application of a pulse voltage. In this work, for a faster phase control of MnTe, the response of metastable ß-MnTe thin films to femtosecond (fs) laser irradiation was investigated. Using ultrafast optical spectroscopy, we inferred transient phase transformation. Moreover, with an increase in laser-excitation fluence, a nonvolatile structural change from the ß to α phase was experimentally observed by Raman spectroscopy and transmission electron microscopy without ablation damage on the sample. The observation results strongly suggest that the fs-laser-induced ß â α phase transformation proceeds through the nucleation and growth mode without a large temperature increase.
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2D van der Waals (vdW) transition metal di-chalcogenides (TMDs) have garnered significant attention in the nonvolatile memory field for their tunable electrical properties, scalability, and potential for phase engineering. However, their complex switching mechanism and complicated fabrication methods pose challenges for mass production. Sputtering is a promising technique for large-area 2D vdW TMD fabrication, but the high melting point (typically Tm > 1000 °C) of TMDs requires elevated temperatures for good crystallinity. This study focuses on the low-Tm 2D vdW TM tetra-chalcogenides and identifies NbTe4 as a promising candidate with an ultra-low Tm of around 447 °C (onset temperature). As-grown NbTe4 forms an amorphous phase upon deposition that can be crystallized by annealing at temperatures above 272 °C. The simultaneous presence of a low Tm and a high crystallization temperature Tc can resolve important issues facing current phase-change memory compounds, such as high Reset energies and poor thermal stability of the amorphous phase. Therefore, NbTe4 holds great promise as a potential solution to these issues.
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Here we report on the growth of thin crystalline films of the metastable phase GeTe2. Direct observation by transmission electron microscopy revealed a Te-Ge-Te stacking with van der Waals gaps. Moreover, electrical and optical measurements revealed the films exhibted semiconducting properties commensurate with electronics applications. Feasibility studies in which device structures were fabricated demonstrated the potential application of GeTe2 as an electronic material.
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Data recording based on the phase transition between amorphous and crystalline phases in a phase-change material (PCM) generally consumes a large amount of operation energy. Heat confinement and scaling down of the contact area between the PCM and electrode are effective strategies for reducing the operation energy in the memory device. Contrary to conventional PCM, such as Ge-Sb-Te compounds (GST), Cr2Ge2Te6 (CrGT) exhibits low thermal conductivity and low-energy memory operation characteristics even in a relatively large contact area. Herein, we show that the operation energy of the CrGT-based memory device is greatly reduced by scaling down. Based on the present results, an operation energy at subpico J order, which was achieved using carbon nanotubes or graphene nanoribbon in the GST-based device, can be realized in the contact area comparable to the product level in the CrGT-based device. The numerical simulation suggests that small thermal and electrical conductivities enhance the thermal efficiency, resulting in a small operation energy for amorphization. It was also found that the residual metastable phase after the amorphization process increased the operation energy for crystallization by the simulation. In other words, these results indicate that further small operation energy can be realized in the CrGT-based device by reducing the metastable phase volume.
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Two-dimensional (2D) van der Waals (vdW) materials possess a crystal structure in which a covalently-bonded few atomic-layer motif forms a single unit with individual motifs being weakly bound to each other by vdW forces. Cr2Ge2Te6 is known as a 2D vdW ferromagnetic insulator as well as a potential phase change material for non-volatile memory applications. Here, we provide evidence for a dimensional transformation in the chemical bonding from a randomly bonded three-dimensional (3D) disordered amorphous phase to a 2D bonded vdW crystalline phase. A counterintuitive metastable "quasi-layered" state during crystallization that exhibits both "long-range order and short-range disorder" with respect to atomic alignment clearly distinguishes the system from conventional materials. This unusual behavior is thought to originate from the 2D nature of the crystalline phase. These observations provide insight into the crystallization mechanism of layered materials in general, and consequently, will be useful for the realization of 2D vdW material-based functional nanoelectronic device applications.
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Displacive transformation is a diffusionless transition through shearing and shuffling of atoms. Diffusionless displacive transition with modifications in physical properties can help manufacture fast semiconducting devices for applications such as data storage and switching. MnTe is known as a polymorphic compound. Here we show that a MnTe semiconductor film exhibits a reversible displacive transformation based on an atomic-plane shuffling mechanism, which results in large electrical and optical contrasts. We found that MnTe polycrystalline films show reversible resistive switching via fast Joule heating and enable nonvolatile memory with lower energy and faster operation compared with conventional phase-change materials showing diffusional amorphous-to-crystalline transition. We also found that the optical reflectance of MnTe films can be reversibly changed by laser heating. The present findings offer new insights into developing low power consumption and fast-operation electronic and photonic phase-change devices.
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Three-dimensional crossbar technology has been of great significance for realizing high density and multiple terabytes of data storage in memory devices. However, to further scale down the size of memory devices, a selector exhibiting nonlinear electrical properties should be in series with a memory layer in case of unwanted sneak current disturbance. Conventional selectors usually utilize a complicated multilayer structure to realize the high nonlinearity of current, which might be incompatible with certain manufacturing processes or limit the scalability of memory. Herein, we propose a simple heterojunction diode using an n-type oxide semiconductor, specifically, InGaZnO4 (IGZO), and a p-type phase change material (PCM), specifically, N-doped Cr2Ge2Te6 (NCrGT), to realize self-selective performance. The electrode/IGZO/NCrGT/plug-electrode structure with an IGZO/NCrGT pn diode and NCrGT/plug-electrode Schottky diode can realize bidirectional, self-selective phase change random access memory (PCRAM) for either amorphous or crystalline NCrGT. The approximate equilibrium energy band diagrams for the IGZO/NCrGT pn junction and the IGZO/NCrGT/W hybrid junction were proposed to explain the possible conduction mechanism. We demonstrated that hybrid diode-type PCM memory exhibits both selectivity and resistive switching characteristics. The present findings offer new insight into selector technology for PCM.
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Cr2Ge2Te6 (CrGT) is a phase change material with higher resistivity in the crystalline phase than in the amorphous phase. CrGT exhibits an ultralow operation energy for amorphization. In this study, the origin of the increased resistance in crystalline CrGT compared to amorphous CrGT and the underlying phase change mechanism were investigated in terms of both local structural change and associated change in electronic state. The density of states at the Fermi level in crystalline CrGT decreased with increasing annealing temperature and became negligible upon annealing at 380 °C. Simultaneously, the Fermi level shifted from the vicinity of the valence band to the band gap center, leading to an increase in resistance. The phase change from amorphous to crystalline CrGT occurred through a metastable crystalline phase with a local structure similar to that of the amorphous phase. Cr nanoclusters were confirmed to exist in both the amorphous and crystalline phases. The presence of Cr nanoclusters induced Cr vacancies in the crystalline phase. These Cr vacancies generated hole carriers, leading to p-type conduction. Photoelectron spectroscopy of the Cr 2s core level clearly indicated a decrease in the fraction of Cr-Cr bonds and an increase in the fraction of Cr-Te bonds in crystalline CrGT upon annealing. Meanwhile, the coordination number of the Cr nanoclusters decreased as the number of Cr-Cr bonds was reduced. Together, these results imply that the origin of the increased resistance in crystalline CrGT is the filling of Cr vacancies by Cr atoms diffusing from Cr nanoclusters.
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Purpose: To define the median endometrial thickness (ET) in office gynecology is thought to be important for clinical practice. However, there are few reports about ET that have included the general female population on a large scale. The median ET was determined prospectively in premenopausal women who attended office gynecology for cervical cancer screening. Methods: In total, 849 women were enrolled. The median ET was determined by using transvaginal ultrasound and the relationships between the ET and various clinical factors were analyzed. Results: The participants' median age was 38.5 years. The median ET was 8.6 mm (90% and 95% quantiles: 13.8 and 15.8 mm). The ET was not related to their age, symptoms, obstetric history, geographical location, or risk factors for endometrial cancer. In the women with a menstrual cycle length of 28-30 days, the ET was 7 mm on days 1-6, but it increased from 5.4 mm immediately after menstruation (day 7 or 8) to 9.2 mm on days 13-14. Subsequently, the ET increased further to 11.1 mm on day 18. Conclusion: In all the women, the upper limit of the ET was 13.8 mm and 15.8 mm in the 90% and 95% quantile, respectively, in office gynecology.
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Phase-change random access memory (PCRAM) has attracted much attention for next-generation nonvolatile memory that can replace flash memory and can be used for storage-class memory. Generally, PCRAM relies on the change in the electrical resistance of a phase-change material between high-resistance amorphous (reset) and low-resistance crystalline (set) states. Herein, we present an inverse resistance change PCRAM with Cr2Ge2Te6 (CrGT) that shows a high-resistance crystalline reset state and a low-resistance amorphous set state. The inverse resistance change was found to be due to a drastic decrease in the carrier density upon crystallization, which causes a large increase in contact resistivity between CrGT and the electrode. The CrGT memory cell was demonstrated to show fast reversible resistance switching with a much lower operating energy for amorphization than a Ge2Sb2Te5 memory cell. This low operating energy in CrGT should be due to a small programmed amorphous volume, which can be realized by a high-resistance crystalline matrix and a dominant contact resistance. Simultaneously, CrGT can break the trade-off relationship between the crystallization temperature and operating speed.
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The functionality of a pulse timing discriminator, which is commonly required in optical communication systems and artificial neuromorphic engineering, was implemented into chalcogenide phase-change materials. GeSbTe (GST) and GeCuTe (GCT), which exhibit opposite refractive index behavior in their respective crystalline and amorphous phases, were employed. A GST/GCT double layer enabled the order of arrival of two counter-propagating femtosecond pulses to be encoded as a difference in the degree of amorphization of the GCT layer, i.e., either a brighter or darker contrast of the amorphized area with respect to the crystalline background. Nonthermal ultrafast amorphization contributed to a picosecond time resolution in the discrimination of the pulse arrival order.
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Shape-memory alloys (SMAs), which display shape recovery upon heating, as well as superelasticity, offer many technological advantages in various applications. Those distinctive behaviors have been observed in many polycrystalline alloy systems such as nickel titantium (TiNi)-, copper-, iron-, nickel-, cobalt-, and Ti-based alloys but not in lightweight alloys such as magnesium (Mg) and aluminum alloys. Here we present a Mg SMA showing superelasticity of 4.4% at -150°C and shape recovery upon heating. The shape-memory properties are caused by reversible martensitic transformation. This Mg alloy includes lightweight scandium, and its density is about 2 grams per cubic centimeter, which is one-third less than that of practical TiNi SMAs. This finding raises the potential for development and application of lightweight SMAs across a number of industries.
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In polycrystalline materials, grain growth occurs at elevated temperatures to reduce the total area of grain boundaries with high energy. The grain growth rate usually slows down with annealing time, making it hard to obtain grains larger than a millimeter in size. We report a crystal growth method that employs only a cyclic heat treatment to obtain a single crystal of more than several centimeters in a copper-based shape-memory alloy. This abnormal grain growth phenomenon results from the formation of a subgrain structure introduced through phase transformation. These findings provide a method of fabricating a single-crystal or large-grain structure important for shape-memory properties, magnetic properties, and creep properties, among others.
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An ingrowing toenail has no definitive treatment. Previously, effective methods were complicated but easy ones had less effect. We show both an easy and an effective way with Cu-Al-Mn-based shape-memory alloys (SMAs). They have a characteristic shape which patients themselves can detach easily without any pain. But they also have enough corrective force. Cu-based SMAs cost much less than Ni-Ti-based alloys. Despite not being appropriate for all cases of ingrowing toenails, it is an easy, effective and less costly alternative.
Asunto(s)
Aleaciones , Dermatología/instrumentación , Uñas Encarnadas/terapia , Adolescente , Anciano , Niño , Estudios de Cohortes , Diseño de Equipo , Humanos , Persona de Mediana Edad , Dedos del PieRESUMEN
A new type of medical guide wire with functionally graded hardness from the tip to the end was developed with the use of Cu-Al-Mn-based alloys. The superelasticity (SE) of the Cu-Al-Mn-based alloys in the tip is drastically improved by controlling the grain size, whereas the end of the wire is hardened using bainitic transformation by aging at around 200-400 degrees C. Therefore, the tip of the guide wire shows a superelasticity and its end has high stiffness. This guide wire with functionally graded characteristics shows excellent pushability and torquability, superior to that of the Ni-Ti guide wire.
