RESUMEN
The magnetic properties of NiO/Co/Pt as a function of Co layer thickness were investigated by polar magneto-optical Kerr effect (PMOKE) (magnetometry and microscopy) and Brillouin Light Scattering (BLS) spectroscopy. PMOKE measurements revealed strong surface anisotropy (1.8 mJ/m2) favoring perpendicular magnetic anisotropy and asymmetric domain wall propagation explained by anticlockwise chirality. BLS measurements show that this chirality is induced by strong interfacial Dzyaloshinskii-Moriya interaction (+ 2.0 pJ/m). This is one of the highest values reported so far for Co layers surrounded by different layers. The observed chirality is opposite to what has been found in Co/oxide interfaces. These results and data published earlier, indicate that the strength of interfacial Dzyaloshinskii-Moriya interaction increases with the amount of stoichiometric NiO. Therefore, this work shows that NiO is the source of the interfacial Dzyaloshinskii-Moriya interaction.
RESUMEN
Modifications of magnetic and magneto-optical properties of Pt/Co(d Co )/Pt upon Ar+ irradiation (with energy 1.2, 5 and 30 keV) and fluence, F at the range from 2 · 1013-2 · 1016 Ar+ cm-2) were studied. Two 'branches' of increased perpendicular magnetic anisotropy (PMA) and enhanced magneto-optical response are found on 2D (d Co , F) diagrams. The difference in F between 'branches' is driven by ion energy. Structural features correlated with magnetic properties have been analysed thoroughly by x-ray diffraction, Rutherford backscattering spectrometry and positron annihilation spectroscopy. Experimental results are in agreement with TRIDYN numerical calculations of irradiation-induced layers intermixing. Our work discusses particularly structural factors related to crystal lattice defects and strain, created and modified by irradiation, co-responsible for the increase in the PMA.
RESUMEN
The report that T(c) was doubled in underdoped La2-xSrxCuO4 films under compressive epitaxial strain has stirred great interest. We show that such films are extremely sensitive to oxygen intake, even at very low temperature, with startling consequences including colossal lattice expansion and a crossover from semiconductor to metallic behavior. We can bring T(c) up to 40 K in La2CuO4 films on SrTiO3 substrates-without any Sr doping and under tensile strain. On LaSrAlO4 substrates, we reached T(c)=51.5 K, the highest so far in La2-xSrxCuO4.
