RESUMEN
Layer-by-layer fabrication of uniformly oriented thin films over large areas by cost-effective solution-based approaches can open new horizons for the realization of high-performance organic circuits in various applications. In this work, fabrication of a large-area ≈40 cm2 film with uniform orientation is reported for poly(3,3â´-dialkylquaterthiophene) (PQT) using a unidirectional floating film transfer method (UFTM). Orientation characteristics and charge transport anisotropy were analyzed using polarized UV-vis spectral mapping and fabrication of bottom-gated organic field-effect transistors (OFETs) from different regions. Films were found to be highly oriented with an optical dichroic ratio of ca. 15. Orientation characteristics reveal that films were highly oriented along the width of the film, covering >70% of the area, and angle-dependent field-effect mobilities are in good agreement with the orientation of the polymer backbones. These highly oriented films resulted in charge transport anisotropy of 8.9. An array of bottom-gated OFETs fabricated along the length of single large-area (≈15 × 2.5 cm2) thin film demonstrated the average field-effect mobility of 0.0262 cm2/(V s) with a very narrow standard deviation of 12.6%. We also demonstrated that film thickness can be easily tuned from 5.6 to 45 nm by increasing the PQT concentration, and field-effect mobility is highly reproducible even when the film thickness is 10 nm. Microstructural characterization of the thus-prepared large-area thin films revealed the edge-on stacked polymer backbones and surface roughness of <1 nm as probed by grazing incidence X-ray diffraction and atomic force microscopy, respectively. Flexible OFETs with bottom-gate top-contact geometry were also fabricated, having average field-effect mobility of 0.0181 cm2/(V s). There was no considerable change in mobility after bending the flexible devices at different radii.
RESUMEN
Recent past has witnessed huge scientific efforts aiming toward enhancing in-plane charge transport by unidirectional orientation of conjugated polymer (CP) backbones adopting various techniques. However, in most of the existing methods, excess amounts of toxic halogenated solvents and preaggregation in solution are inevitable, which are the main bottlenecks toward large-scale fabrication. Solvent-assisted friction transfer (SAFT) is being reported as a novel method and improvisation over conventional friction transfer to expand its versatility. In this method, application of a small amount of the solvent (â¼3 µL) during drawing not only leads to the entirely changed film morphology and molecular orientation but also addresses the existing substrate compatibility issues. Utilizing poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]-thiophene] as a representative CP under SAFT technique, films with extended backbone and edge-on orientation was successfully fabricated, which was confirmed by various characterization tools such as X-ray diffraction, polarized absorption, and polarized Raman spectroscopies. Further, anisotropic charge transport in these films was investigated by fabricating organic field-effect transistors and the role of contact resistance was also studied. Slight solvent use, compatibility with various substrates, and film fabrication with controlled orientation, and after validation of its generality on different CPs, SAFT can be expected to open new avenues in the area of printed electronics.
RESUMEN
To start a step such as some realization of minimized and integrated devices, it requires simply understanding the surface status of hybrid perovskite on the e-beam irradiation because many commercial semiconductor devices are performed with a surface patterning process using e-beam or etching gas. The surface status of CH3NH3PbBr3 (MAPbBr3) single crystal was studied after a grazing e-beam irradiation in an ultra-high vacuum. The prepared hybrid perovskite single crystal was irradiated by the 3 degree-grazing e-beam with energy of 15 kV for 10 min using a reflection high-electron energy diffraction technique. The e-beam irradiation on the MAPbBr3 hybrid perovskite single crystal induced the deformation from MAPbBr3 into MABr, Br2, and Pb on the surface. The gas phases of MABr and Br2 are depleted from the surface and the Pb element has remained on the surface. As a result of the e-beam irradiation, it formed a polycrystalline-like phase and Pb metal particles on the surface, respectively.
