Investigation of emission plane control in GaInN/GaN multiple-quantum shells for efficient nanowire-based LEDs.

Significant attention has been directed toward core-shell GaInN/GaN multiple-quantum shell (MQS) nanowires (NWs) in the context of high-efficiency micro light-emitting diodes (micro-LEDs). These independent three-dimensional NWs offer the advantage of reducing the impact of sidewall etching regions. Furthermore, the emitting plane on the sidewalls demonstrates either nonpolar or semipolar orientation, while the dislocation density is exceptionally low. In this study, we assessed how changes in the NW morphology are affected by GaInN/GaN superlattice (SL) structures grown at varying growth temperatures, as well as control of the emission plane via the p-GaN shell and emission sizes. The SL growth rate was enhanced at elevated growth temperatures, accompanied by the shrinkage of the (0001)-plane and expansion of the (11̄01)-plane on the NWs. The samples exhibited a higher light output when the SLs were grown at elevated temperatures compared to those grown with lower temperatures. A similar trend was observed for the samples with a gradual temperature transition during the growth. These findings indicate that the dimensions of the (0001)-plane can be controlled through SL growth, which in turn influences the emission properties of NW-LEDs. In addition, the emission properties of NW-LEDs with different growth time p-GaN shells and different emission sizes were investigated. Based on the NW-LED characteristics, it was revealed that the weak emission of the (0001)-plane was the dominant factor for the limited light output, and the most effective way to realize high efficiency devices is to suppress current injection into the apex or minimize the grown (0001)-plane region. Overall, it is one promising way to control the emission planes of NWs, which holds significant relevance for the potential application of NW-LEDs in the realm of micro-LEDs.

Superlattice-Induced Variations in Morphological and Emission Properties of GaInN/GaN Multiquantum Nanowire-Based Micro-LEDs.

Core-shell GaInN/GaN multiquantum shell (MQS) nanowires (NWs) are gaining great attention for high-efficiency micro-light-emitting diodes (micro-LEDs) owing to the minimized etching region on their sidewall, nonpolar or semipolar emission planes, and ultralow density of dislocations. In this study, we evaluated the changes in NW morphologies and the corresponding device properties induced by GaInN/GaN superlattice (SL) structures. The cathodoluminescence intensities of the samples with 20 and 40 pairs of SLs were about 2.2 and 3.4 times higher, respectively, than that of the sample without SLs. The high-resolution scanning transmission electron microscopy (STEM) inspection confirmed that the high growth temperature of SLs prevented growth in the semipolar plane region close to the n-GaN core. A similar phenomenon was also observed for the GaN quantum barriers of the semipolar MQS region under a high growth temperature of 810 °C. This phenomenon was ascribed to the passivation of the semipolar plane surface by hydrogen atoms and the high probability of decomposition through NH3 or N-H-related bonds. Although no clear SL grew on the semipolar plane near the n-core region, the top area of the nonpolar plane SL was expected to adequately suppress the point defects propagating from the n-GaN core to the semipolar plane MQS. The electroluminescence (EL) spectra and light output curves demonstrated a clear enhancement of more than 3-folds compared to the fabricated micro-LEDs without SL structures, which was associated with the improved crystalline quality of the MQS and enlarged area of the semipolar planes. Moreover, by increasing the growth time of GaN quantum barriers, the EL emission intensity of the micro-LED devices exhibited a 4-fold improvement owing to the reduced carrier overflow in the thickened GaN barriers on the semipolar (11̅01) planes. Thus, the results verified the possibility of realizing highly efficient NW-based micro-LEDs by optimizing the NW morphology using SL structures.

Pre-trimethylindium Flow Treatment of GaInN/GaN Quantum Wells to Suppress Surface Defect Incorporation and Improve Efficiency.

This study aims to improve the emission efficiency of GaInN-based green light-emitting devices (LEDs) using the pre-trimethylindium (TMIn) flow treatment of a quantum well (QW) since we hypothesize that the pre-TMIn flow treatment is able to suppress the incorporation of surface defects (SDs) from the n-type GaN surface into the QWs. For this purpose, first, we investigate the effect of TMIn flow treatment on the SDs in n-type GaN samples by measuring time-resolved photoluminescence. The result of the investigation shows that the TMIn flow treatment effectively deactivated and/or neutralized the SDs from acting as the nonradiative recombination centers. Next, we prepare and investigate the GaInN-based green LEDs employing five pairs of multiple quantum wells (MQWs), in which the number of pre-TMIn treated QWs varies from zero to five. Through the analysis of prepared samples, we demonstrate that the pre-TMIn flow treatment of QWs works effectively in suppressing the SD incorporation into the MQWs, thereby improving the emission intensity.

Morphology Control and Crystalline Quality of p-Type GaN Shells Grown on Coaxial GaInN/GaN Multiple Quantum Shell Nanowires.

The morphology and crystalline quality of p-GaN shells on coaxial GaInN/GaN multiple quantum shell (MQS) nanowires (NWs) were investigated using metal-organic chemical vapor deposition. By varying the trimethylgallium (TMG) flow rate, Mg doping, and growth temperature, it was verified that the TMG supply and growth temperature were the dominant parameters in the control of the p-GaN shape on NWs. Specifically, a sufficiently high TMG supply enabled the formation of a pyramid-shaped NW structure with a uniform p-GaN shell. The ratio of the growth rate between the c- and m-planes on the NWs was calculated to be approximately 0.4545. High-angle annular dark-field scanning transmission electron microscopy characterization confirmed that no clear extended defects were present in the n-GaN core and MQS/p-GaN shells on the sidewall. Regarding the p-GaN shell above the c-plane MQS region, only a few screw dislocations and Frank-type partial dislocations appeared at the interface between the serpentine c-plane MQS and the p-GaN shell near the tips. This suggested that the crystalline quality of the MQS structure can trigger the formation of screw dislocations and Frank-type partial dislocations during the p-GaN growth. The growth mechanism of the p-GaN shell on NWs was also discussed. To inspect the electronic properties, a prototype of a micro light-emitting diode (LED) with a chip size of 50 × 50 µm2 was demonstrated in the NWs with optimal growth. By correlating the light output curve with the electroluminescence spectra, three different emission peaks (450, 470, and 510 nm) were assignable to the emission from the m-, r-, and c-planes, respectively.

Crystal Growth and Characterization of n-GaN in a Multiple Quantum Shell Nanowire-Based Light Emitter with a Tunnel Junction.

Here, we systematically investigated the growth conditions of an n-GaN cap layer for nanowire-based light emitters with a tunnel junction. Selective-area growth of multiple quantum shell (MQS)/nanowire core-shell structures on a patterned n-GaN/sapphire substrate was performed by metal-organic vapor phase epitaxy, followed by the growth of a p-GaN, an n++/ p++-GaN tunnel junction, and an n-GaN cap layer. Specifically, two-step growth of the n-GaN cap layer was carried out under various growth conditions to determine the optimal conditions for a flat n-GaN cap layer. Scanning transmission electron microscopy characterization revealed that n++-GaN can be uniformly grown on the m-plane sidewall of MQS nanowires. A clear tunnel junction, involving 10-nm-thick p++-GaN and 3-nm-thick n++-GaN, was confirmed on the nonpolar m-planes of the nanowires. The Mg doping concentration and distribution profile of the p++-GaN shell were inspected using three-dimensional atom probe tomography. Afterward, the reconstructed isoconcentration mapping was applied to identify Mg-rich clusters. The density and average size of the Mg clusters were estimated to be approximately 4.3 × 1017 cm-3 and 5 nm, respectively. Excluding the Mg atoms contained in the clusters, the remaining Mg doping concentration in the p++-GaN region was calculated to be 1.1 × 1020 cm-3. Despite the lack of effective activation, a reasonably low operating voltage and distinct light emissions were preliminarily observed in MQS nanowire-based LEDs under the optimal n-GaN cap growth conditions. In the fabricated MQS-nanowire devices, carriers were injected into both the r-plane and m-plane of the nanowires without a clear quantum confinement Stark effect.

Identification of multi-color emission from coaxial GaInN/GaN multiple-quantum-shell nanowire LEDs.

Multi-color emission from coaxial GaInN/GaN multiple-quantum-shell (MQS) nanowire-based light-emitting diodes (LEDs) was identified. In this study, MQS nanowire samples for LED processes were selectively grown on patterned commercial GaN/sapphire substrates using metal-organic chemical vapor deposition. Three electroluminescence (EL) emission peaks (440, 540, and 630 nm) were observed, which were primarily attributed to the nonpolar m-planes, semipolar r-planes, and the polar c-plane tips of nanowire arrays. A modified epitaxial growth sequence with improved crystalline quality for MQSs was used to effectively narrow the EL emission peaks. Specifically, nanowire-based LEDs manifested a clear redshift from 430 nm to 520 nm upon insertion of AlGaN spacers after the growth of each GaInN quantum well. This demonstrates the feasibility of lengthening the EL emission wavelength since an AlGaN spacer can suppress In decomposition of the GaInN quantum wells during ramping up the growth temperature for GaN barriers. EL spectra showed stable emission peaks as a function of the injection current, verifying the critical feature of the non-polarization of GaN/GaInN MQSs on nanowires. In addition, by comparing EL and photoluminescence spectra, the yellow-red emission linked to the In-fluctuation and point defects in the c-plane MQS was verified by varying the activation annealing time and lowering the growth temperature of the GaInN quantum wells. Therefore, optimization of MQS nanowire growth with a high quality of c-planes is considered critical for improving the luminous efficiency of nanowire-based micro-LEDs/white LEDs.

Identifying the cause of thermal droop in GaInN-based LEDs by carrier- and thermo-dynamics analysis.

This study aims to elucidate the carrier dynamics behind thermal droop in GaInN-based blue light-emitting diodes (LEDs) by separating multiple physical factors. To this end, first, we study the differential carrier lifetimes (DCLs) by measuring the impedance of a sample LED under given driving-current conditions over a very wide operating temperature range of 300 K-500 K. The measured DCLs are decoupled into radiative carrier lifetime (τR) and nonradiative carrier lifetime (τNR), via utilization of the experimental DCL data, and then very carefully investigated as a function of driving current over a wide range of operating temperatures. Next, to understand the measurement results of temperature-dependent τR and τNR characteristics, thermodynamic analysis is conducted, which enables to look deeply into the temperature-dependent behavior of the carriers. On the basis of the results, we reveal that thermal droop is originated by the complex dynamics of multiple closely interrelated physical factors instead of a single physical factor. In particular, we discuss the inherent cause of accelerated thermal droop with elevated temperature.

Voltage-Controlled Anodic Oxidation of Porous Fluorescent SiC for Effective Surface Passivation.

This study investigated the fabrication of porous fluorescent SiC using a constant voltage-controlled anodic oxidation process. The application of a high, constant voltage resulted in a spatial distinction between the porous structures formed inside the fluorescent SiC substrates, due to the different etching rates at the terrace and the large step bunches. Large, dendritic porous structures were formed as the etching process continued and the porous layer thickened. Under the conditions of low hydrofluoric acid (HF) concentration, the uniformity of the dendritic porous structures through the entire porous layer was considerably improved compared with the conditions of high HF concentration. The resulting large uniform structure offered a sizable surface area, and promoted the penetration of atomic layer-deposited (ALD) Al2O3 films (ALD-Al2O3). The emission intensity in the porous fluorescent SiC was confirmed via photoluminescence (PL) measurements to be significantly improved by a factor of 128 after ALD passivation. With surface passivation, there was a clear blueshift in the emission wavelength, owing to the effective suppression of the non-radiative recombination rate in the porous structures. Furthermore, the spatial uniformity of emitted light was examined via PL mapping using three different excitation lasers, which resulted in the observation of uniform and distinctive emissions in the fluorescent SiC bulk and porous areas.

GaN-based vertical-cavity surface-emitting lasers with AlInN/GaN distributed Bragg reflectors.

This paper describes the status and prospects of gallium nitride-based vertical-cavity surface-emitting lasers (VCSELs) with semiconductor-based distributed Bragg reflectors. These optoelectronic devices, which emit laser light from the violet to green region, are expected to be a superior light source for the next-generation of displays and illumination, such as retinal scanning displays and adaptive headlights. The development status and prospects are discussed in comparison with already commercialized gallium arsenide-based infrared VCSELs.

Demonstration of electron beam laser excitation in the UV range using a GaN/AlGaN multiquantum well active layer.

This study investigated electron beam laser excitation in the UV region using a GaN/AlGaN multiquantum well (MQW) active layer. Laser emission was observed when the GaN/AlGaN MQW was excited by an electron beam, with a wavelength of approximately 353 nm and a threshold power density of 230 kW/cm2. A comparison of optical pumping and electron beam pumping demonstrated that the rate of generation of electron-hole pairs when using electron beam excitation was approximately one quarter that of light excitation.

Distribution of 1,2-dichloropropane in blood and other tissues of rats after oral administration.

The present investigation was undertaken to determine the distribution of 1,2-dichloropropane (DCP) in the blood, liver, kidney, lung, and abdominal fat of rats after oral administration. Male rats were orally administered 62 or 125 mg/kg body weight doses of DCP dissolved in corn oil by gavage, and the concentrations in the blood and tissues were measured. The DCP concentration in the abdominal fat was much greater than in the blood and other tissues. Twenty-four-hr after oral administration, DCP could still be detected in the blood and abdominal fat in the 62-mg/kg group, and in the blood, liver, kidney, lung, and abdominal fat in the 125-mg/kg group. Our results are valuable data pertaining to the pharmacokinetics of DCP and to human health risk assessment of oral exposure to DCP.

Lung carcinogenicity of inhaled multi-walled carbon nanotube in rats.

BACKGROUND: Multi-walled carbon nanotubes (MWCNTs) constitute one of the most promising types of nanomaterials in industry today. With their increasing use, the potential toxicity and carcinogenicity of MWCNT needs to be evaluated in bioassay studies using rodents. Since humans are mainly exposed to MWCNT by inhalation, we performed a 104-week carcinogenicity study using whole-body inhalation exposure chambers with a fibrous straight type of MWCNT at concentrations of 0, 0.02, 0.2, and 2 mg/m3 using male and female F344 rats. RESULTS: Lung carcinomas, mainly bronchiolo-alveolar carcinoma, and combined carcinomas and adenomas were significantly increased in males exposed to 0.2 and 2 mg/m3 MWNT-7 and in females exposed to 2 mg/m3 MWNT-7 compared to the clean air control group. However, no development of pleural mesothelioma was observed. Concentration-dependent toxic effects in the lung such as epithelial hyperplasia, granulomatous change, localized fibrosis, and alteration in BALF parameters were found in MWNT-7 treatment groups of both sexes. There were no MWNT-7-specific macroscopic findings in the other organs, including the pleura and peritoneum. Absolute and relative lung weights were significantly elevated in male rats exposed to 0.2 and 2 mg/m3 MWNT-7 and in all exposed female groups. The lung burdens of MWNT-7 were clearly increased in a concentration-dependent as well as a duration-dependent manner. CONCLUSION: There is clear evidence that MWNT-7 is carcinogenic to the lungs of male and female F344 rats, however no plural mesothelioma was observed.

Thirteen-week study of toxicity of fiber-like multi-walled carbon nanotubes with whole-body inhalation exposure in rats.

Cancer development due to fiber-like straight type of multi-walled carbon nanotubes (MWCNTs) has raised concerns for human safety because of its shape similar to asbestos. To set concentrations of MWCNT for a rat carcinogenicity study, we conducted a 13-week whole body inhalation study. F344 male and female rats, 6-week-old at the commencement of the study, were exposed by whole-body inhalation to MWCNT at concentrations of 0, 0.2, 1 and 5 mg/m(3) with a generation and exposure system utilizing the cyclone sieve method. Measured concentrations in the exposure chambers were 0.20 ± 0.02, 1.01 ± 0.11 and 5.02 ± 0.25 mg/m(3) for 13 weeks. The MMAD (GSD) of MWCNT were 1.4-1.6 µm (2.3-3.0), and mean width and length were 94.1-98.0 nm and 5.53-6.19 µm, respectively, for each target concentration. Lung weights were increased 1.2-fold with 1 mg/m(3) and 1.3-fold with 5 mg/m(3) in both sexes compared to the controls. In the bronchoalveolar lavage fluid (BALF) analyses, inflammatory parameters were increased concentration-dependently in both sexes from 0.2 mg/m(3). Granulomatous changes in the lung were induced at 1 and 5 mg/m(3) in females and even at 0.2 mg/m(3) in males. Focal fibrosis of the alveolar wall was observed in both sexes at 1 mg/m(3) or higher. Inflammatory infiltration in the visceral pleural and subpleural areas was induced only at 5 mg/m(3). In conclusion, we determined 0.2 mg/m(3) as the low-observed-adverse-effect level (LOAEL) for respiratory tract toxicity in the present inhalation exposure study of rats.

Inhalation exposure to 1,2-dichloropropane: Distribution of blood and tissue concentrations of 1,2-dichloropropane in rats during and after exposure.

The present investigation was undertaken to determine the distribution and accumulation of 1,2-dichloropropane (DCP) in the blood, lung, liver, kidney, and abdominal fat of rats during and after inhalation exposure. Male rats were exposed to 80 or 500 ppm (v/v) DCP vapor for 360 min and the concentrations of DCP in the blood and tissues during the inhalation exposure period and after the end of the exposure period were measured. DCP accumulation in the abdominal fat was much greater than that in the blood and other tissues. Eighteen hours after the end of inhalation exposure, DCP could still be detected in the abdominal fat in the 80-ppm group, and in the blood, liver, kidney, and abdominal fat in the 500-ppm group. Our results are valuable data pertaining to the pharmacokinetics of DCP and to human health risk assessment of exposure to DCP vapor by inhalation.

Estimation of chloroform inhalation dose by other routes based on the relationship of area under the blood concentration-time curve (AUC)-inhalation dose to chloroform distribution in the blood of rats.

The present study investigated the time-course changes of concentration of chloroform (CHCl3) in the blood during and after exposure of male rats to CHCl3 by inhalation. Increasing the dose of CHCl3 in the inhalation exposed groups caused a commensurate increase in the concentration of CHCl3 in the blood and the area under the blood concentration-time curve (AUC). There was good correlation (r = 0.988) between the inhalation dose and the AUC/kg body weight. Based on the AUC/kg body weight-inhalation dose curve and the AUC/kg body weight after oral administration, inhalation equivalent doses of orally administered CHCl3 were calculated. Calculation of inhalation equivalent doses allows the body burden due to CHCl3 by inhalation exposure and oral exposure to be directly compared. This type of comparison facilitates risk assessment in humans exposed to CHCl3 by different routes. Our results indicate that when calculating inhalation equivalent doses of CHCl3, it is critical to include the AUC from the exposure period in addition to the AUC after the end of the exposure period. Thus, studies which measure the concentration of volatile organic compounds in the blood during the inhalation exposure period are crucial. The data reported here makes an important contribution to the physiologically based pharmacokinetic (PBPK) database of CHCl3 in rodents.

Quadrupole effects in tetragonal crystals PrCu2Si2 and DyCu2Si2.

We have investigated quadrupole effects in tetragonal crystals of PrCu2Si2 and DyCu2Si2 by means of low-temperature ultrasonic measurements. The elastic constant C44 of PrCu2Si2 exhibits pronounced softening below 70 K down to a Néel temperature TN = 20 K, which is described in terms of a quadrupole susceptibility for a Γ5 doublet ground state and a Γ3 singlet first excited state located at 15.6 K in the crystalline electric field scheme. The C44 and C66 of DyCu2Si2 also show softening below 70 K down to TN1 = 9.7 K. A low-lying pseudo-sextet state consisting of three Kramers doublets of Γ6⊕2Γ7 brings about softening of C44 and C66 in DyCu2Si2.

Distribution of blood and tissue concentrations in rats by inhalation exposure to 1,2-dichloroethane.

The compound 1,2-dichloroethane (DCE) is a ubiquitous environmental contaminant. The primary route of exposure of humans to DCE is inhalation of its vapor. The present investigation was undertaken to determine the distribution and accumulation of DCE in the blood, lung, liver, brain, kidney and abdominal fat of rats during and after inhalation exposure. Male rats were exposed to 160 ppm (v/v) of DCE vapor for 360 min and the concentrations of DCE in the blood and tissues during the inhalation exposure period and after the end of the exposure period were measured. DCE accumulation in the abdominal fat was much greater than that in the blood and other tissues. The information we obtained in this study is useful basic data pertaining to the pharmacokinetics of DCE and DCE-mediated carcinogenicity: Our results suggest that one of the factors involved in the induction of peritoneal tumors in rats exposed to DCE vapor by inhalation is DCE accumulation in the abdominal fat.

Enzyme-linked immunosorbent assay with monoclonal and single-chain variable fragment antibodies selective to coplanar polychlorinated biphenyls.

Coplanar polychlorinated biphenyls (Co-PCBs) consisting of non-ortho and mono-ortho-chlorinated PCBs are dioxin-like compounds and cause wide contamination in the environment. To monitor Co-PCB residues, it was attempted to establish an enzyme-linked immunosorbent assay (ELISA) with monoclonal and recombinant antibodies selective to Co-PCBs. When 3,3',5,5'-tetrachlorobiphenoxybutyric acid (PCBH)-keyhole limpet hemocyanin conjugate was immunized into mice, two monoclonal antibodies, Mab-0217 and Mab-4444, were obtained. 3,3',5,5'-Tetrachlorobiphenyl (PCB80) was determined with an IC(50) value of 2.6 and 0.46 ng mL(-1) in ELISA based on Mab-0217 and Mab-4444, respectively. Mab-4444 cross-reacted with Co-PCB congeners, except for PCB77 and PCB81. Mab-0217 reacted with PCB80 and cross-reacted with PCB111. A single-chain variable fragment (scFv) antibody derived from Mab-4444 was produced in recombinant Escherichia coli cells. The scFv antibody showed nearly the same sensitivity toward PCBH as the parent monoclonal antibody in ELISA. These results clearly suggested that Mab-4444 and its scFv antibodies were suitable for monitoring the representative congeners of Co-PCBs.

Differences in spontaneous fetal abnormalities among three outbred stocks of Wistar Hannover rats in Japan.

Wistar Hannover rats, which are maintained by three animal breeders in Japan, were examined to obtain basic data on reproductive and developmental parameters. Untreated pregnant females were terminated on gestational day 20, and the fetuses were removed by cesarian section. The fetuses were counted, weighed and examined for morphological abnormalities. There were few differences among the three stocks of Wistar Hannover rats on the numbers of implantations and live fetuses, sex ratio and fetal weights. The most common fetal abnormalities were the presence of left-sided umbilical arteries, supernumerary ribs and wavy ribs. The incidences of these abnormalities were different among the three stocks of Wistar Hannover rats. Our results provide important data which should be considered in the determination of which stock of rat is used in developmental studies.

How we select our residents--a survey of selection criteria in general surgery residents.

INTRODUCTION: The future of general surgery depends on the quality of the resident trainees, and successful resident selection is a factor that is important in the process of high-quality surgical education. METHODS: A 36-question survey regarding resident selection and the interview process was sent to surgical program directors, department chairs, and associate program directors across the United States and Canada. RESULTS: In all, 262 valid replies were received (65%), of which 83% were program directors. University hospital programs accounted for 49% of the completed surveys. The mean yearly applicant number per residency program was 571. Most programs indicated that they strictly adhere to their selection criteria (82%). The screening selection is made by the program director in 62%. Only 31% of programs show their selection criteria on their web page. United States Medical Licensing Examination (USMLE) Step 1 is the single most important factor in screening criteria (37%), followed by USLME Step 2 (24%). A total of 96% of all programs have female residents, 66% have non-Liaison Committee on Medical Education graduates, and 38% have Doctor of Osteopathy (DO) residents. Final selection is made by the program director in 49%. Although research experience is considered in selection criteria (80%), only 46% of programs offer research opportunities to their residents and only 13% require 1-year of research. On a Likert 5-point scale, the interview is by far the most important factor (4.69), followed by Step 1 score (4.21), and letters of recommendation (4.02). CONCLUSIONS: Even though all general surgery programs have a wide range of screening/selection criteria, USLME Step 1 is the single most important factor for preliminary screening, and the interview is the most important factor in determining the final selection. The final selection is relatively subjective and based on a combination of interview, USLME scores, research experience, and personal judgment.