RESUMEN
This paper investigates the threshold voltage shift (ΔVTH) induced by positive bias temperature instability (PBTI) in silicon carbide (SiC) power MOSFETs. By analyzing ΔVTH under various gate stress voltages (VGstress) at 150 °C, distinct mechanisms are revealed: (i) trapping in the interface and/or border pre-existing defects and (ii) the creation of oxide defects and/or trapping in spatially deeper oxide states with an activation energy of ~80 meV. Notably, the adoption of different characterization methods highlights the distinct roles of these mechanisms. Moreover, the study demonstrates consistent behavior in permanent ΔVTH degradation across VGstress levels using a power law model. Overall, these findings deepen the understanding of PBTI in SiC MOSFETs, providing insights for reliability optimization.
RESUMEN
The University of Bari (Italy), in cooperation with the National Institute of Geophysics and Volcanology (INGV) (Italy), has installed the OTRIONS micro-earthquake network to better understand the active tectonics of the Gargano promontory (Southern Italy). The OTRIONS network operates since 2013 and consists of 12 short period, 3 components, seismic stations located in the Apulian territory (Southern Italy). This data article releases the waveform database collected from 2013 to 2018 and describes the characteristics of the local network in the current configuration. At the end of 2018, we implemented a cloud infrastructure to make more robust the acquisition and storage system of the network through a collaboration with the RECAS-Bari computing centre of the University of Bari (Italy) and of the National Institute of Nuclear Physics (Italy). Thanks to this implementation, waveforms recorded after the beginning of 2019 and the station metadata are accessible through the European Integrated Data Archive (EIDA, https://www.orfeus-eu.org/data/eida/nodes/INGV/).