High-SPL Air-Coupled Piezoelectric Micromachined Ultrasonic Transducers Based on 36% ScAlN Thin-Film.

In this paper, air-coupled piezoelectric micromachined ultrasonic transducers (PMUTs) using 36% scandium-doped aluminum nitride (ScAlN) thin-film are presented. ScAlN is known to exhibit higher piezoelectric properties compared to pure AlN leading to significant performance improvements in various piezoelectric micro-electromechanical systems (MEMS) applications including PMUTs. Here, the concentration of Sc in the actual sputtered 1- [Formula: see text]-thick ScAlN film was 36%, which is slightly below the maximum at the phase boundary. The ScAlN PMUTs were fabricated from an SOI wafer, where the dry etching of ScAlN film was optimized. The frequency response and displacement sensitivity of the PMUTs were characterized in the air using laser Doppler vibrometry confirming 2× higher transverse piezoelectric coefficient than AlN. The acoustic transmission and reception of the PMUTs were evaluated from a high-sensitivity microphone and pulse-echo measurements. The PMUTs were designed to operate below 100 kHz in order to mitigate the absorption loss, which resulted in a high transmit pressure of 105-dB sound pressure level (SPL) at 10 cm and only 30-dB attenuation at the 2-m range. Through implementing 36% ScAlN film, the presented PMUTs exhibited a large displacement and consequently, a high SPL compared to the state-of-the-art PMUTs and the bulk transducer considering the size and the excitation voltage.

Wave Propagation Direction and c-Axis Tilt Angle Influence on the Performance of ScAlN/Sapphire-Based SAW Devices.

Some previously reported surface acoustic wave (SAW) devices using bulk piezoelectric substrates showed higher acoustic power radiated in either forward or backward wave propagation direction depending on their crystal orientations and are called natural single-phase unidirectional transducers (NSPUDT). While these reports were based on bulk piezoelectric substrates, we report directionality in the c-axis tilted 44% scandium doped aluminum nitride thin piezoelectric film-based SAW devices on sapphire. It is worth noting that our observance of directionality is specifically in Sezawa mode. We produced a c-axis tilt up to 5.5° over the single wafer and examined the directionality by comparing the forward and backward insertion loss utilizing split finger electrodes as a receiver. The wave propagation direction and c-axis tilt angle influence on the performance of SAW devices is evaluated. Furthermore, return loss and insertion loss data are presented for various SAW propagation directions and c-axis tilt angles. Finally, the comparison for both acoustic modes, i.e., Rayleigh and Sezawa, is reported.

High-performance surface acoustic wave resonators in the 1 to 3 GHz range using a ScAlN/6H-SiC structure.

This paper describes application of Sc-doped AlN (ScAlN) to wideband SAW devices in the 1 to 3 GHz range. First, it is shown theoretically that large SAW velocity and electromechanical coupling factor are simultaneously achievable when the ScAlN film is combined with a base substrate with extremely high acoustic wave velocities, such as diamond and SiC. Next, SAW delay lines are fabricated on the ScAlN/6H-SiC structure, and reasonable agreement between the theory and experiment is obtained. Finally, one-port SAW resonators are fabricated on the structure, and it is shown that high-performance is achievable in the 1 to 3 GHz range by use of the structure.