Role of the carrier density in the transport mechanisms of polycrystalline ZnO films.

The transport processes occurring in polycrystalline ZnO have been investigated by measuring the resistivity as a function of temperature in ZnO films with different n-doping levels, obtained by varying the oxygen pressure during the deposition process. These films show an electrical resistivity spanning about two orders of magnitude, from 4 to 8 × 10-2Ω cm at room temperature, corresponding to low and high levels of n-type doping, respectively. The present results indicate a relevant role of the carrier density in determining the dominant transport mechanisms in these samples by showing that the picture characterizing a highly n-doped ZnO sample, where an intra-grain mechanism and a grain-boundary mechanism dominate the high temperature and low temperature transport processes, respectively, is thoroughly overturned in lightly n-doped samples, where a grain-boundary mechanism and an intra-grain mechanism govern the charge transport in the same temperature regimes, respectively. Moreover, the present results indicate a critical role of the conditions limiting the occurrence of the Mott variable range hopping regime. They show indeed that an incomplete check of such conditions can result in erroneous conclusions about the prevalent transport mechanisms.

Transport mechanisms in Co-doped ZnO (ZCO) and H-irradiated ZCO polycrystalline thin films.

In the present study, the electrical resistivity (ρ) as a function of the temperature (T) has been measured in polycrystalline ZnO, Co-doped ZnO (ZCO) and H irradiated ZCO (HZCO) samples, in the 300-20 K range. The achieved results show impressive effects of Co doping and H irradiation on the ZnO transport properties. The Co dopant increases the ZnO resistivity at high T (HT), whereas it has an opposite effect at low T (LT). H balances the Co effects by neutralizing the ρ increase at HT and strengthening its decrease at LT. A careful analysis of the ρ data permits to identify two different thermally activated processes as those governing the charge transport in the three materials at HT and LT, respectively. The occurrence of such processes has been fully explained in terms of a previously proposed model based on an acceptor impurity band, induced by the formation of Co-oxygen vacancy complexes, as well as known effects produced by H on the ZnO properties. The same analysis shows that both Co and H reduce the effects of grain boundaries on the transport processes. The high conductivity of HZCO in the whole T-range and its low noise level resulting from electric noise spectroscopy make this material a very interesting one for technological applications.

The interplay between single particle anisotropy and interparticle interactions in ensembles of magnetic nanoparticles.

This paper aims to analyze the competition of single particle anisotropy and interparticle interactions in nanoparticle ensembles using a random anisotropy model. The model is first applied to ideal systems of non-interacting and strongly dipolar interacting ensembles of maghemite nanoparticles. The investigation is then extended to more complex systems of pure cobalt ferrite CoFe2O4 (CFO) and mixed cobalt-nickel ferrite (Co,Ni)Fe2O4 (CNFO) nanoparticles. Both samples were synthetized by the polyol process and exhibit the same particle size (DTEM ≈ 5 nm), but with different interparticle interaction strengths and single particle anisotropy. The implementation of the random anisotropy model allows investigation of the influence of single particle anisotropy and interparticle interactions, and sheds light on their complex interplay as well as on their individual contribution. This analysis is of fundamental importance in order to understand the physics of these systems and to develop technological applications based on concentrated magnetic nanoparticles, where single and collective behaviors coexist.

Ferromagnetic Mn-doped Si0.3Ge0.7 nanodots self-assembled on Si(100).

Densely packed epitaxial Mn-doped Si(0.3)Ge(0.7) nanodots self-assembled on Si(100) have been obtained. Their structural properties were studied using reflection high-energy electron diffraction, energy dispersive x-ray diffraction, atomic force microscopy, extended x-ray absorption fine structure measurements and high-resolution transmission electron microscopy. Mn(5)Ge(1)Si(2) crystallites embedded in Si(0.3)Ge(0.7) were found. They exhibit a ferromagnetic behaviour with a Curie temperature of about 225 K.

Evidence of cobalt-vacancy complexes in Zn(1-x)Co(x)O dilute magnetic semiconductors.

We investigate the local structure of ferromagnetic Zn(1-x)Co(x)O epilayers by coupling polarization-dependent x-ray absorption spectroscopy and ab initio calculations of selected defect structures. We give clear evidence of the presence of oxygen vacancies, located close to the Co atoms in a specific complex configuration. We also establish the upper concentration limit of metallic parasitic nanophases and their contribution to magnetism. Our results lead to the conclusion that oxygen vacancies play an important role in originating the high temperature ferromagnetism of Zn(1-x)Co(x)O.

Magnetic interactions in silica coated nanoporous assemblies of CoFe2O4 nanoparticles with cubic magnetic anisotropy.

Magnetic interactions in silica coated spherical nanoporous assemblies of CoFe(2)O(4) nanoparticles have been investigated by low temperature field dependent remanent magnetization (M(DCD) and M(IRM)) and magnetization relaxation measurements. The synthesis procedure leads to the formation of spherical aggregates of about 50-60 nm in diameter composed of hexagonal shaped nanocrystals with shared edges. The negative deviation from the non-interacting case in the Henkel plot indicates the predominance of dipole-dipole interactions favouring the demagnetized state, although the presence of exchange interactions in the porous system cannot be excluded. The activation volume, derived from time dependent magnetization measurements, turns out to be comparable with the particle physical volume, thus indicating, in agreement with static and dynamic irreversible magnetization measurements, that the magnetization reversal actually involves individual crystals.

Interface exchange coupling in Co nanoparticles dispersed in a Mn matrix.

The structural and magnetic properties of 1.8 nm Co particles dispersed in a Mn matrix by co-depositing pre-formed mass-selected Co clusters with an atomic vapour of Mn onto a common substrate have been studied by using EXAFS (extended x-ray absorption fine structure), XMCD (x-ray magnetic circular dichroism), magnetometry, and theoretical modelling. At low Co volume fraction (5%) Co@Mn shows a significant degree of alloying and the well-defined particles originally deposited become centres of high Co concentration CoMn alloy that evolves from pure Co at the nanoparticle centre to the pure Mn matrix within a few nm. Each inhomogeneity is a core-shell particle with a Co-rich ferromagnetic core in contact with a Co-depleted antiferromagnetic shell. The XMCD reveals that the Co moment localized on the Co atoms within the Co-rich cores is much smaller than the ferromagnetic moment of the Co nanoparticles deposited at the same volume fraction in Ag. Electronic structure calculations indicate that the small magnitude of the core Co moment can be understood only if significant alloying occurs. Monte Carlo modelling replicates the exchange bias (EB) behaviour observed at low temperature from magnetometry measurements. We ascribe EB to the interaction between the ferromagnetic Co-rich cores and the antiferromagnetic Mn-rich shells.