Role of Curvature in Stabilizing Boron-Doped Nanocorrugated Graphene.

Boron-doped carbon nanostructures have attracted great interest recently because of their remarkable electrocatalytic performance comparable to or better than that of conventional metal catalysts. In a previous work (Carbon 123, 605 (2017)), we reported that along with significant performance improvement, B doping enhances the oxidation resistance of few-layer graphene (FLG) that provides increased structural stability for intermediate-temperature fuel-cell electrodes. In general, detailed characterization of the atomic and electronic structure transformations that occur in B-doped carbon nanostructures during fuel-cell operation is lacking. In this work, we use aberration-corrected scanning transmission electron microscopy, nanobeam electron diffraction, and electron energy-loss spectroscopy (EELS) to characterize the atomic and electronic structures of B-doped FLG before and after fuel-cell operation. These data point to the nanoscale corrugation of B-doped FLGs as the key factor responsible for increased stability and high corrosion resistance. The similarity of the 1s to π* and σ* transition features in the B K-edge EELS to those in B-doped carbon nanotubes provides an estimate for the curvature of nanocorrugation in B-FLG.

Ferrielectricity in the Archetypal Antiferroelectric, PbZrO3.

Antiferroelectric materials, where the transition between antipolar and polar phase is controlled by external electric fields, offer exceptional energy storage capacity with high efficiencies, giant electrocaloric effect, and superb electromechanical response. PbZrO3 is the first discovered and the archetypal antiferroelectric material. Nonetheless, substantial challenges in processing phase pure PbZrO3 have limited studies of the undoped composition, hindering understanding of the phase transitions in this material or unraveling the controversial origins of a low-field ferroelectric phase observed in lead zirconate thin films. Leveraging highly oriented PbZrO3 thin films, a room-temperature ferrielectric phase is observed in the absence of external electric fields, with modulations of amplitude and direction of the spontaneous polarization and large anisotropy for critical electric fields required for phase transition. The ferrielectric state observations are qualitatively consistent with theoretical predictions, and correlate with very high dielectric tunability, and ultrahigh strains (up to 1.1%). This work suggests a need for re-evaluation of the fundamental science of antiferroelectricity in this archetypal material.

Remote Oxygen Scavenging of the Interfacial Oxide Layer in Ferroelectric Hafnium-Zirconium Oxide-Based Metal-Oxide-Semiconductor Structures.

Discovery of ferroelectricity in HfO2 has sparked a lot of interest in its use in memory and logic due to its CMOS compatibility and scalability. Devices that use ferroelectric HfO2 are being investigated; for example, the ferroelectric field-effect transistor (FEFET) is one of the leading candidates for next generation memory technology, due to its area, energy efficiency and fast operation. In an FEFET, a ferroelectric layer is deposited on Si, with an SiO2 layer of ∼1 nm thickness inevitably forming at the interface. This interfacial layer (IL) increases the gate voltage required to switch the polarization and write into the memory device, thereby increasing the energy required to operate FEFETs, and makes the technology incompatible with logic circuits. In this work, it is shown that a Pt/Ti/thin TiN gate electrode in a ferroelectric Hf0.5Zr0.5O2 based metal-oxide-semiconductor (MOS) structure can remotely scavenge oxygen from the IL, thinning it down to ∼0.5 nm. This IL reduction significantly reduces the ferroelectric polarization switching voltage with a ∼2× concomitant increase in the remnant polarization and a ∼3× increase in the abruptness of polarization switching consistent with density functional theory (DFT) calculations modeling the role of the IL layer in the gate stack electrostatics. The large increase in remnant polarization and abruptness of polarization switching are consistent with the oxygen diffusion in the scavenging process reducing oxygen vacancies in the HZO layer, thereby depinning the polarization of some of the HZO grains.

Local Epitaxial Templating Effects in Ferroelectric and Antiferroelectric ZrO2.

Nanoscale polycrystalline thin-film heterostructures are central to microelectronics, for example, metals used as interconnects and high-K oxides used in dynamic random-access memories (DRAMs). The polycrystalline microstructure and overall functional response therein are often dominated by the underlying substrate or layer, which, however, is poorly understood due to the difficulty of characterizing microstructural correlations at a statistically meaningful scale. Here, an automated, high-throughput method, based on the nanobeam electron diffraction technique, is introduced to investigate orientational relations and correlations between crystallinity of materials in polycrystalline heterostructures over a length scale of microns, containing several hundred individual grains. This technique is employed to perform an atomic-scale investigation of the prevalent near-coincident site epitaxy in nanocrystalline ZrO2 heterostructures, the workhorse system in DRAM technology. The power of this analysis is demonstrated by answering a puzzling question: why does polycrystalline ZrO2 transform dramatically from being antiferroelectric on polycrystalline TiN/Si to ferroelectric on amorphous SiO2/Si?

Antiferroelectric negative capacitance from a structural phase transition in zirconia.

Crystalline materials with broken inversion symmetry can exhibit a spontaneous electric polarization, which originates from a microscopic electric dipole moment. Long-range polar or anti-polar order of such permanent dipoles gives rise to ferroelectricity or antiferroelectricity, respectively. However, the recently discovered antiferroelectrics of fluorite structure (HfO2 and ZrO2) are different: A non-polar phase transforms into a polar phase by spontaneous inversion symmetry breaking upon the application of an electric field. Here, we show that this structural transition in antiferroelectric ZrO2 gives rise to a negative capacitance, which is promising for overcoming the fundamental limits of energy efficiency in electronics. Our findings provide insight into the thermodynamically forbidden region of the antiferroelectric transition in ZrO2 and extend the concept of negative capacitance beyond ferroelectricity. This shows that negative capacitance is a more general phenomenon than previously thought and can be expected in a much broader range of materials exhibiting structural phase transitions.

Controlling the Surface Oxidation of Cu Nanowires Improves Their Catalytic Selectivity and Stability toward C2+ Products in CO2 Reduction.

Copper nanostructures are promising catalysts for the electrochemical reduction of CO2 because of their unique ability to produce a large proportion of multi-carbon products. Despite great progress, the selectivity and stability of such catalysts still need to be substantially improved. Here, we demonstrate that controlling the surface oxidation of Cu nanowires (CuNWs) can greatly improve their C2+ selectivity and stability. Specifically, we achieve a faradaic efficiency as high as 57.7 and 52.0 % for ethylene when the CuNWs are oxidized by the O2 from air and aqueous H2 O2 , respectively, and both of them show hydrogen selectivity below 12 %. The high yields of C2+ products can be mainly attributed to the increase in surface roughness and the generation of defects and cavities during the electrochemical reduction of the oxide layer. Our results also indicate that the formation of a relatively thick, smooth oxide sheath can improve the catalytic stability by mitigating the fragmentation issue.

Synthetic Engineering of Morphology and Electronic Band Gap in Lateral Heterostructures of Monolayer Transition Metal Dichalcogenides.

Heterostructures of two-dimensional transition metal dichalcogenides (TMDs) can offer a plethora of opportunities in condensed matter physics, materials science, and device engineering. However, despite state-of-the-art demonstrations, most current methods lack enough degrees of freedom for the synthesis of heterostructures with engineerable properties. Here, we demonstrate that combining a postgrowth chalcogen-swapping procedure with the standard lithography enables the realization of lateral TMD heterostructures with controllable dimensions and spatial profiles in predefined locations on a substrate. Indeed, our protocol receives a monolithic TMD monolayer (e.g., MoSe2) as the input and delivers lateral heterostructures (e.g., MoSe2-MoS2) with fully engineerable morphologies. In addition, through establishing MoS2xSe2(1-x)-MoS2ySe2(1-y) lateral junctions, our synthesis protocol offers an extra degree of freedom for engineering the band gap energies up to ∼320 meV on each side of the heterostructure junction via changing x and y independently. Our electron microscopy analysis reveals that such continuous tuning stems from the random intermixing of sulfur and selenium atoms following the chalcogen swapping. We believe that, by adding an engineering flavor to the synthesis of TMD heterostructures, our study lowers the barrier for the integration of two-dimensional materials into practical optoelectronic platforms.

Deeply Rechargeable and Hydrogen-Evolution-Suppressing Zinc Anode in Alkaline Aqueous Electrolyte.

Metallic zinc as a rechargeable anode material for aqueous batteries has gained tremendous attention. Zn-air batteries, which operate in alkaline electrolytes, are promising with the highest theoretical volumetric energy density. However, rechargeable zinc anodes develop slowly in alkaline electrolytes due to passivation, dissolution, and hydrogen evolution issues. In this study, we report the design of a submicron zinc anode sealed with an ion-sieving coating that suppresses hydrogen evolution reaction. The design is demonstrated with ZnO nanorods coated by TiO2, which overcomes passivation, dissolution, and hydrogen evolution issues simultaneously. It achieves superior reversible deep cycling performance with a high discharge capacity of 616 mAh/g and Coulombic efficiency of 93.5% when cycled with 100% depth of discharge at lean electrolyte. It can also deeply cycle ∼350 times in a beaker cell. The design principle of this work may potentially be applied to other battery electrode materials.

H2O-prompted CO2 capture on metal silicates in situ generated from SBA-15.

A series of metal silicates, NaMSi10Ox (M = Cu, Mn and Ni), were prepared by in situ doping of metals into mesoporous SBA-15 under a hydrothermal process, displaying a continuous framework of SiO4 structure with a narrow pore size distribution. These metal silicate materials were tested for CO2 adsorption behavior in the absence and presence of water. The results exhibited that the effect of H2O on the CO2 capture capability of metal silicates depends on the types of metal inserted into SBA-15. Compared to the dry condition, H2O addition enhances CO2 uptake dramatically for NaCuSi10Ox by 25%, and slightly for NaNiSi10Ox (∼10%), whereas little effect is shown on NaMnSi10Ox. The metal silicate materials are stable after adsorption of CO2 under wet conditions, which is benefited from their synthesis method, hydrothermal conditions. The improvement of CO2 uptake on metal silicates by H2O is attributed to the competitive and synergistic adsorption mechanism on the basis of IR investigations, where initially adsorbed H2O acts as a promoter for further CO2 capture through a hydration reaction, i.e., formation of bicarbonate and carbonates on the surface of the samples. These observations provide new possibilities for the design and synthesis of porous metal silicate materials for CO2 capture under practical conditions where moisture is present.

Strain tolerance of two-dimensional crystal growth on curved surfaces.

Two-dimensional (2D) crystal growth over substrate features is fundamentally guided by the Gauss-Bonnet theorem, which mandates that rigid, planar crystals cannot conform to surfaces with nonzero Gaussian curvature. Here, we reveal how topographic curvature of lithographically designed substrate features govern the strain and growth dynamics of triangular WS2 monolayer single crystals. Single crystals grow conformally without strain over deep trenches and other features with zero Gaussian curvature; however, features with nonzero Gaussian curvature can easily impart sufficient strain to initiate grain boundaries and fractured growth in different directions. Within a strain-tolerant regime, however, triangular single crystals can accommodate considerable (<1.1%) localized strain exerted by surface features that shift the bandgap up to 150 meV. Within this regime, the crystal growth accelerates in specific directions, which we describe using a growth model. These results present a previously unexplored strategy to strain-engineer the growth directions and optoelectronic properties of 2D crystals.

The Effect of Nickel on MoS2 Growth Revealed with in Situ Transmission Electron Microscopy.

MoS2 has important applications in (electro)catalysis and as a semiconductor for electronic devices. Other chemical species are commonly added to MoS2 to increase catalytic activity or to alter electronic properties through substitutional or adsorption-based doping. While groundbreaking work has been devoted to determining the atomic-scale structure of MoS2 and other layered transition-metal dichalcogenides (TMDCs), there is a lack of understanding of the dynamic processes that govern the evolution of these materials during synthesis. Here, in situ transmission electron microscopy (TEM) heating, in combination with larger length scale ex situ experiments, is used to investigate the effects of added Ni on the growth of MoS2 during the thermolysis of the solid-state (NH4)2MoS4 precursor. Low concentrations of Ni are observed to cause significant differences in the MoS2 crystallization and growth process, leading to an increase in MoS2 crystal size. This is likely a result of the altered mobility of interfaces between crystals during growth. These findings demonstrate the important role of additional elements in controlling the evolution of TMDCs during synthesis, which should be considered when designing these materials for a variety of applications.

Measuring the areal density of nanomaterials by electron energy-loss spectroscopy.

Thickness measurements of nanomaterials are usually performed using transmission electron microscopy (TEM) techniques such as convergent beam electron diffraction (CBED) patterns analysis and the log-ratio method based on electron energy-loss spectroscopy (EELS) spectrum. However, it is challenging to obtain both the thickness and elemental information, especially in non-crystalline materials or for very thin samples. In this work, we establish a series of procedures to calculate the areal density of the material by directly measuring the inelastic scattering probability in a thin sample. Core-loss EELS are fit with a quantitative model to extract atomic areal density. Knowledge of one of the parameters (volume density or sample thickness) allows a measurement of the other. The absolute error between the known thicknesses and those measured was less than 4% using two-dimensional materials with a well-defined thickness as test samples, which is much better than the log-ratio method for very thin samples. One promising advantage of this method is the thickness/areal density determination in mixed phase/element systems. We use Ag-Co bimetallic triangles and black rutile as examples to calculate the thickness map in mixture systems in different cases. We also demonstrate this technique can be applied to measure the argon gas density in spherical cavities. This allows a temperature vs pressure curve to be obtained and illustrates the unique capability of this technique.

Defect-Mediated Alloying of Monolayer Transition-Metal Dichalcogenides.

Alloying plays a central role in tailoring the material properties of 2D transition-metal dichalcogenides (TMDs). However, despite widespread reports, the details of the alloying mechanism in 2D TMDs have remained largely unknown and are yet to be further explored. Here, we combine a set of systematic experiments with ab initio density functional theory (DFT) calculations to unravel a defect-mediated mechanism for the alloying of monolayer TMD crystals. In our alloying approach, a monolayer MoSe2 film serves as a host crystal in which exchanging selenium (Se) atoms with sulfur (S) atoms yields a MoS2 xSe2(1- x) alloy. Our study reveals that the driving force required for the alloying of CVD-grown films with abundant vacancy-type defects is significantly lower than that required for the alloying of exfoliated films with fewer vacancies. Indeed, we show that pre-existing Se vacancies in the host MoSe2 lattice mediate the replacement of chalcogen atoms and facilitate the synthesis of MoS2 xSe2(1- x) alloys. Our DFT calculations suggest that S atoms can bind to Se vacancies and then diffuse throughout the host MoSe2 lattice via exchanging the position with Se vacancies, further supporting our proposed defect-mediated alloying mechanism. Beside native vacancy defects, we show that the existence of large-scale defects in CVD-grown MoSe2 films causes the fracture of alloys under the alloying-induced strain, while no such effect is observed in exfoliated MoSe2 films. Our study provides a deep insight into the details of the alloying mechanism and enables the synthesis of 2D alloys with tunable properties.

Surface Mechanoengineering of a Zr-Based Bulk Metallic Glass via Ar-Nanobubble Doping To Probe Cell Sensitivity to Rigid Materials.

In this study, a new materials platform, utilizing the amorphous microstructure of bulk metallic glasses (BMGs) and the versatility of ion implantation, was developed for the fundamental investigation of cell responses to substrate-rigidity variations in the gigapascal modulus range, which was previously unattainable with polymeric materials. The surface rigidity of a Zr-Al-Ni-Cu-Y BMG was modulated with low-energy Ar-ion implantation because of the impartment of Ar nanobubbles into the amorphous matrix. Surface softening was achieved due to the formation of nanobubble-doped transitional zones in the Zr-based BMG substrate. Bone-forming cell studies on this newly designed platform demonstrated that mechanical cues, accompanied by the potential effects of other surface properties (i.e., roughness, morphology, and chemistry), contributed to modulating cell behaviors. Cell adhesion and actin filaments were found to be less established on less stiff surfaces, especially on the surface with an elastic modulus of 51 GPa. Cell growth appeared to be affected by surface-mechanical properties. A lower stiffness was generally related to a higher growth rate. Findings in this study broadened our fundamental understanding concerning the mechanosensing of bone cells on stiff substrates. It also suggests that surface mechanoengineering of metallic materials could be a potential strategy to promote osseointegration of such materials for bone-implant applications. Further investigations are proposed to fine-tune the ion implantation variables in order to further distinguish the surface-mechanical effect on bone-forming cell activities from the contributions of other surface properties.

Nonequilibrium Synthesis of TiO2 Nanoparticle "Building Blocks" for Crystal Growth by Sequential Attachment in Pulsed Laser Deposition.

Nonequilibrium growth pathways for crystalline nanostructures with metastable phases are demonstrated through the gas-phase formation, attachment, and crystallization of ultrasmall amorphous nanoparticles as building blocks in pulsed laser deposition (PLD). Temporally and spatially resolved gated-intensified charge couple device (ICCD) imaging and ion probe measurements are employed as in situ diagnostics to understand and control the plume expansion conditions for the synthesis of nearly pure fluxes of ultrasmall (∼3 nm) amorphous TiO2 nanoparticles in background gases and their selective delivery to substrates. These amorphous nanoparticles assemble into loose, mesoporous assemblies on substrates at room temperature but dynamically crystallize by sequential particle attachment at higher substrate temperatures to grow nanostructures with different phases and morphologies. Molecular dynamics calculations are used to simulate and understand the crystallization dynamics. This work demonstrates that nonequilibrium crystallization by particle attachment of metastable ultrasmall nanoscale "building blocks" provides a versatile approach for exploring and controlling the growth of nanoarchitectures with desirable crystalline phases and morphologies.

Black Anatase Formation by Annealing of Amorphous Nanoparticles and the Role of the Ti2O3 Shell in Self-Organized Crystallization by Particle Attachment.

We use amorphous titania nanoparticle networks produced by pulsed laser vaporization at room temperature as a model system for understanding the mechanism of formation of black titania. Here, we characterize the transformation of amorphous nanoparticles by annealing in pure Ar at 400 °C, the lowest temperature at which black titania was observed. Atomic resolution electron microscopy methods and electron energy loss spectroscopy show that the onset of crystallization occurs by nucleation of an anatase core that is surrounded by an amorphous Ti2O3 shell. The formation of the metastable anatase core before the thermodynamically stable rutile phase occurs according to the Ostwald phase rule. In the second stage the particle size increases by coalescence of already crystallized particles by a self-organized mechanism of crystallization by particle attachment. We show that the Ti2O3 shell plays a critical role in both black titania transformation and functionality. At 400 °C, Ti2O3 hinders the agglomeration of neighboring particles to maintain a high surface-to-volume ratio that is beneficial for enhanced photocatalytic activity. In agreement with previous results, the thin Ti2O3 surface layer acts as a narrow bandgap semiconductor in concert with surface defects to enhance the photocatalytic activity. Our results demonstrate that crystallization by particle attachment can be a highly effective mechanism for optimizing photocatalytic efficiency by controlling the phase, composition, and particle size distribution in a wide range of self-doped defective TiO2 architectures simply by varying the annealing conditions of amorphous nanoparticles.

Ultrafast Charge Transfer and Hybrid Exciton Formation in 2D/0D Heterostructures.

Photoinduced interfacial charge transfer is at the heart of many applications, including photovoltaics, photocatalysis, and photodetection. With the emergence of a new class of semiconductors, i.e., monolayer two-dimensional transition metal dichalcogenides (2D-TMDs), charge transfer at the 2D/2D heterojunctions has attracted several efforts due to the remarkable optical and electrical properties of 2D-TMDs. Unfortunately, in 2D/2D heterojunctions, for a given combination of two materials, the relative energy band alignment and the charge-transfer efficiency are locked. Due to their large variety and broad size tunability, semiconductor quantum dots (0D-QDs) interfaced with 2D-TMDs may become an attractive heterostructure for optoelectronic applications. Here, we incorporate femtosecond pump-probe spectroscopy to reveal the sub-45 fs charge transfer at a 2D/0D heterostructure composed of tungsten disulfide monolayers (2D-WS2) and a single layer of cadmium selenide/zinc sulfide core/shell 0D-QDs. Furthermore, ultrafast dynamics and steady-state measurements suggested that, following electron transfer from the 2D to the 0D, hybrid excitons, wherein the electron resides in the 0D and the hole resides in the 2D-TMD monolayer, are formed with a binding energy on the order of ∼140 meV, which is several times lower than that of tightly bound excitons in 2D-TMDs.

Tailoring Vacancies Far Beyond Intrinsic Levels Changes the Carrier Type and Optical Response in Monolayer MoSe2-x Crystals.

Defect engineering has been a critical step in controlling the transport characteristics of electronic devices, and the ability to create, tune, and annihilate defects is essential to enable the range of next-generation devices. Whereas defect formation has been well-demonstrated in three-dimensional semiconductors, similar exploration of the heterogeneity in atomically thin two-dimensional semiconductors and the link between their atomic structures, defects, and properties has not yet been extensively studied. Here, we demonstrate the growth of MoSe2-x single crystals with selenium (Se) vacancies far beyond intrinsic levels, up to ∼20%, that exhibit a remarkable transition in electrical transport properties from n- to p-type character with increasing Se vacancy concentration. A new defect-activated phonon band at ∼250 cm(-1) appears, and the A1g Raman characteristic mode at 240 cm(-1) softens toward ∼230 cm(-1) which serves as a fingerprint of vacancy concentration in the crystals. We show that post-selenization using pulsed laser evaporated Se atoms can repair Se-vacant sites to nearly recover the properties of the pristine crystals. First-principles calculations reveal the underlying mechanisms for the corresponding vacancy-induced electrical and optical transitions.

Interlayer Coupling in Twisted WSe2/WS2 Bilayer Heterostructures Revealed by Optical Spectroscopy.

van der Waals (vdW) heterostructures are promising building blocks for future ultrathin electronics. Fabricating vdW heterostructures by stamping monolayers at arbitrary angles provides an additional range of flexibility to tailor the resulting properties than could be expected by direct growth. Here, we report fabrication and comprehensive characterizations of WSe2/WS2 bilayer heterojunctions with various twist angles that were synthesized by artificially stacking monolayers of WS2 and WSe2 grown by chemical vapor deposition. After annealing the WSe2/WS2 bilayers, Raman spectroscopy reveals interlayer coupling with the appearance of a mode at 309.4 cm(-1) that is sensitive to the number of WSe2 layers. This interlayer coupling is associated with substantial quenching of the intralayer photoluminescence. In addition, microabsorption spectroscopy of WSe2/WS2 bilayers revealed spectral broadening and shifts as well as a net ∼10% enhancement in integrated absorption strength across the visible spectrum with respect to the sum of the individual monolayer spectra. The observed broadening of the WSe2 A exciton absorption band in the bilayers suggests fast charge separation between the layers, which was supported by direct femtosecond pump-probe spectroscopy. Density functional calculations of the band structures of the bilayers at different twist angles and interlayer distances found robust type II heterojunctions at all twist angles, and predicted variations in band gap for particular atomistic arrangements. Although interlayer excitons were indicated using femtosecond pump-probe spectroscopy, photoluminescence and absorption spectroscopies did not show any evidence of them, suggesting that the interlayer exciton transition is very weak. However, the interlayer coupling for the WSe2/WS2 bilayer heterojunctions indicated by substantial PL quenching, enhanced absorption, and rapid charge transfer was found to be insensitive to the relative twist angle, indicating that stamping provides a robust approach to realize reliable optoelectronics.

Structure and Formation Mechanism of Black TiO2 Nanoparticles.

The remarkable properties of black TiO2 are due to its disordered surface shell surrounding a crystalline core. However, the chemical composition and the atomic and electronic structure of the disordered shell and its relationship to the core remain poorly understood. Using advanced transmission electron microscopy methods, we show that the outermost layer of black TiO2 nanoparticles consists of a disordered Ti2O3 shell. The measurements show a transition region that connects the disordered Ti2O3 shell to the perfect rutile core consisting first of four to five monolayers of defective rutile, containing clearly visible Ti interstitial atoms, followed by an ordered reconstruction layer of Ti interstitial atoms. Our data suggest that this reconstructed layer presents a template on which the disordered Ti2O3 layers form by interstitial diffusion of Ti ions. In contrast to recent reports that attribute TiO2 band-gap narrowing to the synergistic action of oxygen vacancies and surface disorder of nonspecific origin, our results point to Ti2O3, which is a narrow-band-gap semiconductor. As a stoichiometric compound of the lower oxidation state Ti(3+) it is expected to be a more robust atomic structure than oxygen-deficient TiO2 for preserving and stabilizing Ti(3+) surface species that are the key to the enhanced photocatalytic activity of black TiO2.