RESUMEN
The electronic structure of (1 1 1) Sm1-x Gd x Al2, a zero-magnetization ferromagnet, is investigated by angle- and spin- resolved photoemission spectroscopy. An intense electron pocket strongly localized around [Formula: see text] and close to the Fermi level is observed and analyzed in detail. Its various characteristics, combined with electronic structure calculations, reveal a resonant surface state of 5d character and Λ1 symmetry, likely built on bulk states developing around L points. It exhibits moreover a low temperature positive spin polarization at the Fermi level, of strong interest for spin-dependent transport properties in Sm1-x Gd x Al2-based spintronic devices.
RESUMEN
We demonstrate that shot noise in Fe/MgO/Fe/MgO/Fe double-barrier magnetic tunnel junctions is determined by the relative magnetic configuration of the junction and also by the asymmetry of the barriers. The proposed theoretical model, based on sequential tunneling through the system and including spin relaxation, successfully accounts for the experimental observations for bias voltages below 0.5 V, where the influence of quantum well states is negligible. A weak enhancement of conductance and shot noise, observed at some voltages (especially above 0.5 V), indicates the formation of quantum well states in the middle magnetic layer. The observed results open up new perspectives for a reliable magnetic control of the most fundamental noise in spintronic structures.
RESUMEN
We investigate electronic transport in epitaxial Fe(100)/MgO/Fe/MgO/Fe double magnetic tunnel junctions with soft barrier breakdown (hot spots). Specificity of these junctions is continuous middle layer and nitrogen doping of the MgO barriers which provides soft breakdown at biases about 0.5 V. In the junctions with hot spots we observe quasiperiodic changes in the resistance as a function of bias voltage which point out formation of quantum well states in the middle Fe continuous free layer. The room-temperature oscillations have been observed in both parallel and antiparallel magnetic configurations and for both bias polarizations. A simple model of tunneling through hot spots in the double barrier magnetic junction is proposed to qualitatively explain this effect.
RESUMEN
Catalysts play a key role in the growth of carbon nanotubes. The microwave plasma-assisted chemical vapor deposition (MPACVD) method is now commonly used for directional and conformal growth of carbon nanotubes (CNTs) on substrates. In this work, we report on the effect of H(2) plasma pre-treatment on the diameter and density of iron catalyst nanoparticles for different iron layer thicknesses in order to grow isolated bundles of CNTs. Atomic force microscopy shows first that as plasma power density increases, iron nanoparticle diameters decrease, which is due to the increasing of gas dissociation giving more ion bombardment energy, and second that the diameter of nanoparticles decreases with the catalyst thickness. The growth of CNT was carried out under different CH(4) concentrations for different iron film thicknesses. Transmission electron microscopy and Raman spectroscopy show that the synthesized CNT were of good quality and had an outer diameter between 5 and 10 nm.
RESUMEN
We report on the experimental observation of tunneling across an ultrathin metallic Cr spacer layer that is inserted at the interface of a Fe/MgO/Fe(001) junction. We show how this remarkable behavior in a solid-state device reflects a quenching in the transmission of particular electronic states, as expected from the symmetry-filtering properties of the MgO barrier and the band structure of the bcc Cr(001) spacer in the epitaxial junction stack. This ultrathin Cr metallic barrier can promote quantum well states in an adjacent Fe layer.
RESUMEN
The direct impact of the electronic structure on spin-polarized transport has been experimentally proven in high-quality Fe/MgO/Fe epitaxial magnetic tunnel junctions, with an extremely flat bottom Fe/MgO interface. The voltage variation of the conductance points out the signature of an interfacial resonance state located in the minority band of Fe(001). When coupled to a metallic bulk state, this spin-polarized interfacial state enhances the band matching at the interface and therefore increases strongly the conductivity in the antiparallel magnetization configuration. Consequently, the tunnel magnetoresistance is found to be positive below 0.2 V and negative above. On the other hand, when the interfacial state is either destroyed by roughness-related disorder or not coupled to the bulk, the magnetoresistance is almost independent on the bias voltage.
RESUMEN
Magnetic interactions involving ferromagnetic layers separated by an insulating barrier have been studied experimentally on a fully epitaxial hard-soft magnetic tunnel junction: Fe/MgO/Fe/Co. For a barrier thickness below 1 nm, a clear antiferromagnetic interaction is observed. Moreover, when reducing the MgO thickness from 1 to 0.5 nm, the coupling strength increases up to J=-0.26 erg.cm(-2). This behavior, well fitted by theoretical models, provides an unambiguous signature of the interlayer exchange coupling by spin-polarized quantum tunneling.
RESUMEN
Local transport properties of Al2O3 tunnel barriers have been investigated at a nanometric spatial scale with an unconventional near field microscope. Using the tunneling effect, which is extremely sensitive to fluctuations of the barrier parameters (less than 1 to 2 A), a unique method is introduced to investigate the tunnel barrier quality. This technique provides atomic scale information on the barrier characteristics which cannot be obtained by conventional surface analysis techniques since they are all subject to averaging over surface and depth.
