Engineering of Semiconductor Nanocrystals for Light Emitting Applications.

Semiconductor nanocrystals are rapidly spreading into the display and lighting markets. Compared with liquid crystal and organic LED displays, nanocrystalline quantum dots (QDs) provide highly saturated colors, wide color gamut, resolution, rapid response time, optical efficiency, durability and low cost. This remarkable progress has been made possible by the rapid advances in the synthesis of colloidal QDs and by the progress in understanding the intriguing new physics exhibited by these nanoparticles. In this review, we provide support to the idea that suitably engineered core/graded-shell QDs exhibit exceptionally favorable optical properties, photoluminescence and optical gain, while keeping the synthesis facile and producing QDs well suited for light emitting applications. Solid-state laser emitters can greatly profit from QDs as efficient gain materials. Progress towards fabricating low threshold, solution processed DFB lasers that are optically pumped using one- and two-photon absorption is reviewed. In the field of display technologies, the exploitation of the exceptional photoluminescence properties of QDs for LCD backlighting has already advanced to commercial levels. The next big challenge is to develop the electroluminescence properties of QD to a similar state. We present an overview of QLED devices and of the great perspectives for next generation display and lighting technologies.

Two-photon absorption properties and (1)O2 generation ability of Ir complexes: an unexpected large cross section of [Ir(CO)2Cl(4-(para-di-n-butylaminostyryl)pyridine)].

The new complexes cis-[Ir(CO)2Cl(4-(para-di-n-butylaminostyryl)pyridine)] () and [Ir(cyclometallated-2-phenylpyridine)2(4,4'-(para-di-n-butylaminostyryl)-2,2'-bipyridine)][PF6] () were synthesized and fully characterized along with the known complex Ir(cyclometallated-2-phenylpyridine)2(5-Me-1,10-phenanthroline)][PF6] (). Remarkably, complex , with an Ir(i) centre, displays fluorescence - as opposed to the phosphorescence typical of many Ir(iii) complexes - with a modestly high quantum yield in solution, opening a new route for the design of iridium-based emitters which should not be limited to the +3 oxidation state. It is also characterized by an unexpectedly large two-photon absorption (TPA) cross section, an order of magnitude higher than that previously reported for Ir(iii) or Pt(ii) complexes. The great potential of cyclometallated Ir(iii) complexes for photodynamic therapy was confirmed, with and showing a good singlet oxygen generation ability, coupled with a modest TPA activity for .

Sensitive detection of Ochratoxin A in food and drinks using metal-enhanced fluorescence.

Easy, sensitive, rapid and low cost ochratoxin biosensors are strongly demanded in food analysis since Ochratoxin A (OTA) is a widely diffused food contaminant, highly detrimental for human health. In this work, a novel plasmonic based optical biosensor prototype for ochratoxin A is described. It exploits the metal-enhanced fluorescence phenomenon due to the silver film over nanosphere plasmonic substrate. Since ochratoxin A could be present in different food commodities, sensor performances have been tested on three different matrices (dried milk, juices, and wheat mix). Firstly, a common OTA extraction solvent and a labeling and detection protocol were defined for the analyzed matrices. Then, the efficiency of the Ag-FON surfaces in signal amplification for the detection of low ochratoxin A concentrations was defined. Using samples spiked with OTA-AF 647 or with unlabeled OTA we were able to detect the mycotoxin at concentrations lower than E.U. specifications of 0.5 µg/kg in wheat, milk and apple juice. The test performances are comparable to those of ELISA kits but the platform presented here, once optimized, present some perspective advantages, such as: low cost and time consuming, versatility of the protocol for the investigation of different matrices, employment also in non-qualified laboratories, small dimensions that allow its integration in a compact device for OTA on-site detection.

Investigation into the heterostructure interface of CdSe-based core-shell quantum dots using surface-enhanced Raman spectroscopy.

The structural nature of heterointerfaces in core-shell semiconductor quantum dots (QDs) plays a crucial role in tailoring their optical properties. In this work we have focused on using surface-enhanced Raman spectroscopy as a nondestructive tool to investigate the structural evolution of such interfaces in CdSe/CdS and CdSe/Cd0.5Zn0.5S colloidal QDs. A comparison between the two systems shows significant structural variation across the core-shell interfaces for the two different materials: a smooth interface for the former and an abrupt interface for the latter. This structural difference modifies the electronic structure within the QDs, which directly dictates the confinement behavior of the electrons and holes. The implications of this translate to a better understanding of why graded CdSe/CdS/Cd0.5Zn0.5S/ZnS QDs are so lucrative for linear and nonlinear fluorescence-based applications.

Photophysics and dynamics of surface plasmon polaritons-mediated energy transfer in the presence of an applied electric field.

The possibility to transfer energy between molecular excitons across a metal film up to 150 nm thick represents a very attractive solution to control and improve the performances of thin optoeletronic devices. This process involves the presence of coupled surface plasmon polaritons (SPPs) at the two dielectric-metal interfaces, capable of mediating the interactions between donor and acceptor, located on opposite sides of the metal film. In this Article, the photophysics and the dynamics of an efficient SPP-mediated energy transfer between a suitable dye and a conjugated polymer is characterized by means of steady-state and time-resolved photoluminescence techniques. The process is studied in model multilayer structures (donor/metal/acceptor) as well as in electrically pumped heterostructures (donor/metal cathode/acceptor/anode), to verify the effects of applied electric fields on the efficiency and the dynamics of SPP-mediated energy transfer. A striking enhancement of the overall luminescence was recorded in a particular range of applied bias, suggesting the presence of cooperative effects between optical and electrical stimulations.

Facile production of up-converted quantum dot lasers.

We report a facile production of an up-converted surface-emitting DFB laser, performed by exploiting the versatility of sol-gel chemistry, the intriguing properties of well designed graded CdSe-CdS-Cd(0.5)Zn(0.5)S-ZnS colloidal quantum dots, and the scalability of nanoimprinting. Our laser prototype operates in the visible region following efficient optical pumping by either direct one-photon excitation or through the up-conversion of near infrared (NIR) light. By achieving cavity mode Q-factors in excess of 650 and retaining high lasing stabilities in air, this work highlights the feasibility of creating integrated lasing devices through solution based methods.

Correlation between dielectric/organic interface properties and key electrical parameters in PPV-based OFETs.

We report on the influence of the dielectric/organic interface properties on the electrical characteristics of field-effect transistors based on polyphenylenevinylene derivatives. Through a systematic investigation of the most common dielectric surface treatments, a direct correlation of their effect on the field-effect electrical parameters, such as charge carrier mobility, On/Off current ratio, threshold voltage, and current hysteresis, has been established. It is found that the presence of OH groups at the dielectric surface, already known to act as carrier traps for electrons, decreases the hole mobility whereas it does not substantially affect the other electrical characteristics. The treatment of silicon dioxide surfaces with gas phase molecules such as octadecyltrichlorosilane and hexamethyldisilazane leads to an improvement in hole mobility as well as to a decrease in current hysteresis. The effects of a dielectric polymer layer spin coated onto silicon dioxide substrates before deposition of the semiconductor polymer can be related not only to the OH groups density but also to the interaction between the dielectric and the semiconductor molecules. Specifically, the elimination of the OH groups produces the same effect observed with hexamethyldisilazane. The hole mobility values obtained with hexamethyldisilazane and polymer dielectrics are the highest reported to date for PPV-based field-effect transistors.