RESUMEN
This study provides experimental evidence for the following: (1) Excess minority carrier recombination at SiO2/Si interfaces is associated with O2 dissociative adsorption; (2) the x-ray induced enhancement of SiO2 growth is not caused by the band flattening resulting from the surface photovoltaic effect but by the electron-hole pair creation resulting from core level photoexcitation for the spillover of bulk Si electronic states toward the SiO2 layer; and (3) a metastable chemisorbed O2 species plays a decisive role in combining two types of the single- and double-step oxidation reaction loops. Based on experimental results, the unified Si oxidation reaction model mediated by point defect generation [S. Ogawa et al., Jpn. J. Appl. Phys., Part 1 59, SM0801 (2020)] is extended from the viewpoints of (a) the excess minority carrier recombination at the oxidation-induced vacancy site and (b) the trapping-mediated adsorption through the chemisorbed O2 species at the SiO2/Si interface.
RESUMEN
The orientation and motion of reactants play important roles in reactions. The small rotational excitations involved render the reactants susceptible to dynamical steering, making direct comparison between experiments and theory rather challenging. Using space-quantized molecular beams, we directly probed the (polar and azimuthal) orientation dependence of O2 chemisorption on Cu(110) and Cu3Au(110). We observed polar and azimuthal anisotropies on both surfaces. Chemisorption proceeded rather favorably with the O-O bond axis oriented parallel (vs perpendicular) to the surface and rather favorably with the O-O bond axis oriented along [001] (vs along [1Ì 10]). The presence of Au hindered the surface from further oxidation, introducing a higher activation barrier to chemisorption and rendering an almost negligible azimuthal anisotropy. The presence of Au also prevented the cartwheel-like rotations of O2.
RESUMEN
Understanding the process of oxidation on the surface of GaN is important for improving metal-oxide-semiconductor (MOS) devices. Real-time X-ray photoelectron spectroscopy was used to observe the dynamic adsorption behavior of GaN surfaces upon irradiation of H2O, O2, N2O, and NO gases. It was found that H2O vapor has the highest reactivity on the surface despite its lower oxidation power. The adsorption behavior of H2O was explained by the density functional molecular dynamic calculation including the spin state of the surfaces. Two types of adsorbed H2O molecules were present on the (0001) (+c) surface: non-dissociatively adsorbed H2O (physisorption), and dissociatively adsorbed H2O (chemisorption) molecules that were dissociated with OH and H adsorbed on Ga atoms. H2O molecules attacked the back side of three-fold Ga atoms on the (0001Ì ) (-c) GaN surface, and the bond length between the Ga and N was broken. The chemisorption on the (101Ì 0) m-plane of GaN, which is the channel of a trench-type GaN MOS power transistor, was dominant, and a stable Ga-O bond was formed due to the elongated bond length of Ga on the surface. In the atomic layer deposition process of the Al2O3 layer using H2O vapor, the reactions caused at the interface were more remarkable for p-GaN. If unintentional oxidation can be resulted in the generation of the defects at the MOS interface, these results suggest that oxidant gases other than H2O and O2 should be used to avoid uncontrollable oxidation on GaN surfaces.
RESUMEN
We investigated the oxidation of oxygen vacancies at the surface of anatase TiO2(001) using a supersonic seeded molecular beam (SSMB) of oxygen. The oxygen vacancies at the top surface and subsurface could be eliminated by the supply of oxygen using an SSMB. Oxygen vacancies are present on the surface of anatase TiO2(001) when it is untreated before transfer to a vacuum chamber. These vacancies, which are stable in the as-grown condition, could also be effectively eliminated by using the oxygen SSMB.
RESUMEN
We report the X-ray photoemission spectroscopy (XPS) characterization of the bulk Cu2O(111) surface and "8" and "29" oxide structures on Cu(111) prepared using a 0.5 eV O2 supersonic molecular beam. We propose a new structural model for the "8" oxide structure and also confirm the previously proposed model for the "29" oxide structure on Cu(111), based on the O 1s XPS spectra. The detection angle dependence of the O 1s spectra supports that the nanopyramidal model is more preferable for the (â3 × â3)R30° Cu2O(111). We also report electronic excitations that O 1s electrons suffer.
RESUMEN
We bombarded [Formula: see text] and [Formula: see text] with a 2.3 eV hyperthermal oxygen molecular beam (HOMB) source, and characterized the corresponding (oxide) surfaces with synchrotron-radiation X-ray photoemission spectroscopy (SR-XPS). At [Formula: see text], CuO forms on both [Formula: see text] and [Formula: see text]. When we increase the surface temperature to [Formula: see text], [Formula: see text] also forms on [Formula: see text], but not on [Formula: see text]. For comparison, [Formula: see text] forms even at [Formula: see text] on Cu(111). On [Formula: see text], [Formula: see text] forms only after [Formula: see text], and no oxides can be found at [Formula: see text]. We ascribe this difference in Cu oxide formation to the mobility of the interfacial species (Cu/Pd/Pt) and charge transfer between the surface Cu oxides and subsurface species (Cu/Pd/Pt).
RESUMEN
We report results of our experimental and theoretical studies on the oxidation of Cu-Au alloy surfaces, viz., Cu3Au(111), CuAu(111), and Au3Cu(111), using hyperthermal O2 molecular beam (HOMB). We observed strong Au segregation to the top layer of the corresponding clean (111) surfaces. This forms a protective layer that hinders further oxidation into the bulk. The higher the concentration of Au in the protective layer formed, the higher the protective efficacy. As a result, of the three Cu-Au surfaces studied, Au3Cu(111) is the most stable against dissociative adsorption of O2, even with HOMB. We also found that this protective property breaks down for oxidations occurring at temperatures above 300 K.
RESUMEN
We report results of the segregation induced by the adsorption of O2 and the barrier of the formation of Cu2O in Cu3Au(111) with an experimental and theoretical approach. Oxidation by a hyperthermal O2 molecular beam (HOMB) was investigated by X-ray photoemission spectroscopy in conjunction with a synchrotron light source. From the incident-energy dependence of the measured O-uptake curve, dissociative adsorption of O2 is less effective on Cu3Au(111) than on Cu(111). The dissociative adsorption is accompanied by the Cu segregation on Cu3Au(111) as well as on Cu3Au(100) and Cu3Au(110). The obvious growth of Cu2O for a 2.3 eV HOMB cannot be observed and it suggests that the Au-rich protective layers prevent the diffusion of O atoms into the bulk. The theoretical approach based on density functional theory indicates that O adsorption shows the same behavior on Cu3Au(111) and on Cu(111). For the diffusion case, the barrier to diffuse into the subsurface in segregated Cu3Au(111) is higher than in Cu(111). This indicates that the segregated Au-rich layer in Cu3Au(111) works as a protective layer.
RESUMEN
We report results of our experimental and theoretical studies on the Au concentration profile of Cu3Au(111) during oxidation by a hyperthermal O2 molecular beam at room temperature, using X-ray photoemission spectroscopy (XPS), in conjunction with synchrotron radiation (SR), and density functional theory (DFT). Before O2 exposure, we observe strong Au segregation to the top layer, i.e., Au surface enrichment of the clean surface. We also observe a gradual Cu surface enrichment, and Au enrichment of the second and third (subsurface) layers, with increasing O coverage. Complete Cu segregation to the surface occurs at 0.5 ML O surface coverage. The Au-rich second and third layers of the oxidized surface demonstrate the protective layer formation against oxidation deeper into the bulk.
