Phonon Raman spectroscopy of nanocrystalline multinary chalcogenides as a probe of complex lattice structures.

Ternary (I-III-VI) and quaternary (I-II-IV-VI) metal-chalcogenides like CuInS2or Cu2ZnSn(S,Se)4are among the materials currently most intensively investigated for various applications in the area of alternative energy conversion and light-emitting devices. They promise more sustainable and affordable solutions to numerous applications, compared to more developed and well understood II-VI and III-V semiconductors. Potentially superior properties are based on an unprecedented tolerance of these compounds to non-stoichiometric compositions and polymorphism. However, if not properly controlled, these merits lead to undesirable coexistence of different compounds in a single polycrystalline lattice and huge concentrations of point defects, becoming an immense hurdle on the way toward real-life applications. Raman spectroscopy of phonons has become one of the most powerful tools of structural diagnostics and probing physical properties of bulk and microcrystalline I-III-VI and I-II-IV-VI compounds. The recent explosive growth of the number of reports on fabrication and characterization of nanostructures of these compounds must be pointed out as well as the steady use of Raman spectroscopy for their characterization. Interpretation of the vibrational spectra of these compound nanocrystals (NCs) and conclusions about their structure can be complicated compared to bulk counterparts because of size and surface effects as well as emergence of new structural polymorphs that are not realizable in the bulk. This review attempts to summarize the present knowledge in the field of I-III-VI and I-II-IV-VI NCs regarding their phonon spectra and capabilities of Raman and IR spectroscopies in the structural characterizations of these promising families of compounds.

Spectroscopy and Theoretical Modeling of Phonon Vibration Modes and Band Gap Energy of Cu2ZnSn(S x Se1-x )4 Bulk Crystals and Thin Films.

Semiconductor Cu2ZnSn(S x Se1-x )4 (CZTSSe) solid solution is considered as a perspective absorber material for solar cells. However, during its synthesis or deposition, any modification in the resulting optical properties is hardly predicted. In this study, experimental and theoretical analyses of CZTSSe bulk crystals and thin films are presented based on Raman scattering and absorption spectroscopies together with compositional and morphological characterizations. CZTSSe bulk and thin films are studied upon a change in the x = S/(S + Se) aspect ratio. The morphological study is focused on surface visualization of the solid solutions, depending on x variation. It has been discovered for the first time that the surface of the bulk CZTSSe crystal with x = 0.35 has pyramid-like structures. The information obtained from the elemental analysis helps to consider the formation of a set of possible intrinsic lattice defects, including vacancies, self-interstitials, antisites, and defect complexes. Due to these results and the experimentally obtained values of the band gap within 1.0-1.37 eV, a deviation from the calculated band gap values is estimated in the range of 1.0-1.5 eV. It is suggested which defects can have an influence on such a band gap change. Also, on comparing the experimental Raman spectra of CZTSSe with the theoretical modeling results, an excellent agreement is obtained for the main Raman bands. The proposed theoretical approach allows to estimate the values of concentration of atoms (S or Se) for CZTSSe solid solution directly from the experimental Raman spectra. Thus, the visualization of morphology and the proposed theoretical approach at various x values will help for a deeper understanding of the CZTSSe structure to develop next-generation solar cells.

Raman and X-ray Photoelectron Spectroscopic Study of Aqueous Thiol-Capped Ag-Zn-Sn-S Nanocrystals.

The synthesis of (Cu,Ag)-Zn-Sn-S (CAZTS) and Ag-Zn-Sn-S (AZTS) nanocrystals (NCs) by means of "green" chemistry in aqueous solution and their detailed characterization by Raman spectroscopy and several complementary techniques are reported. Through a systematic variation of the nominal composition and quantification of the constituent elements in CAZTS and AZTS NCs by X-ray photoemission spectroscopy (XPS), we identified the vibrational Raman and IR fingerprints of both the main AZTS phase and secondary phases of Ag-Zn-S and Ag-Sn-S compounds. The formation of the secondary phases of Ag-S and Ag-Zn-S cannot be avoided entirely for this type of synthesis. The Ag-Zn-S phase, having its bandgap in near infrared range, is the reason for the non-monotonous dependence of the absorption edge of CAZTS NCs on the Ag content, with a trend to redshift even below the bandgaps of bulk AZTS and CZTS. The work function, electron affinity, and ionization potential of the AZTS NCs are derived using photoelectron spectroscopy measurements.

Raman and infrared phonons in tetragonal ZnP2 and CdP2 crystals: a density functional study.

Lattice dynamic properties of the tetragonal modification of ZnP2 and CdP2 crystals (space group P41212, no 92) are calculated within the density functional theory. Theoretical results are shown to compare favorably with available Raman scattering and infrared reflection/transmission experimental data, which allows assignment of Raman-and infrared-active modes to the specific lattice eigenmodes. It is confirmed that several distinct features of vibrational spectra of these compounds steam from the presence of four phosphorous spiraling chains within crystallographic unit cell.

Direct Determination of 3D Distribution of Elemental Composition in Single Semiconductor Nanoislands by Scanning Auger Microscopy.

An application of scanning Auger microscopy with ion etching technique and effective compensation of thermal drift of the surface analyzed area is proposed for direct local study of composition distribution in the bulk of single nanoislands. For GexSi1 - x-nanoislands obtained by MBE of Ge on Si-substrate gigantic interdiffusion mixing takes place both in the open and capped nanostructures. Lateral distributions of the elemental composition as well as concentration-depth profiles were recorded. 3D distribution of the elemental composition in the d-cluster bulk was obtained using the interpolation approach by lateral composition distributions in its several cross sections and concentration-depth profile. It was shown that there is a germanium core in the nanoislands of both nanostructure types, which even penetrates the substrate. In studied nanostructures maximal Ge content in the nanoislands may reach about 40 at.%.

A spectroscopic and photochemical study of Ag(+)-, Cu(2+)-, Hg(2+)-, and Bi(3+)-doped Cd(x)Zn(1-x)S nanoparticles.

A combination of stationary and time-resolved absorption and photoluminescence spectroscopy with flash and steady-state photolysis of Ag(+), Cu(2+), Hg(2+), or Bi(3+)-doped Cd(x)Zn(1-)(x)S nanoparticles was used to assess the nature of the doping influence upon the optical properties of Cd(x)Zn(1-x)S nanoparticles. The relationships between the type and the concentration of a dopant and the dynamics of the photoinduced processes in the doped nanoparticles are derived and discussed. A correlation is found between the magnitude of doping-induced changes in the intensity and decay dynamics of the deep trap photoluminescence and an enhancement of the transient bleaching recovery and acceleration of the photocorrosive degradation of the doped Cd(x)Zn(1-x)S NPs compared to the undoped ones. The impact of the dopant upon the intensity of the luminescence and microsecond transient bleaching bands was found to grow substantially from Ag(+) to Cu(2+), Hg(2+) and Bi(3+). The same trend was found to hold for the acceleration of the steady-state photochemical corrosion of doped Cd(x)Zn(1-x)S nanoparticles. The differences among the effect of the dopant ions studied were interpreted in terms of the depth and charge of surface states created by Cd(2+) (Zn(2+)) substitution by a dopant.