Interplay of Surface and Dirac Plasmons in Topological Insulators: The Case of Bi_{2}Se_{3}.

We have investigated plasmonic excitations at the surface of Bi_{2}Se_{3}(0001) via high-resolution electron energy loss spectroscopy. For low parallel momentum transfer q_{∥}, the loss spectrum shows a distinctive feature peaked at 104 meV. This mode varies weakly with q_{∥}. The behavior of its intensity as a function of primary energy and scattering angle indicates that it is a surface plasmon. At larger momenta (q_{∥}~0.04 Å^{-1}), an additional peak, attributed to the Dirac plasmon, becomes clearly defined in the loss spectrum. Momentum-resolved loss spectra provide evidence of the mutual interaction between the surface plasmon and the Dirac plasmon of Bi_{2}Se_{3}. The proposed theoretical model accounting for the coexistence of three-dimensional doping electrons and two-dimensional Dirac fermions accurately represents the experimental observations. The results reveal novel routes for engineering plasmonic devices based on topological insulators.

High-Q resonant cavities for terahertz quantum cascade lasers.

We report on the realization and characterization of two different designs for resonant THz cavities, based on wire-grid polarizers as input/output couplers, and injected by a continuous-wave quantum cascade laser (QCL) emitting at 2.55 THz. A comparison between the measured resonators parameters and the expected theoretical values is reported. With achieved quality factor Q ≈ 2.5 × 10(5), these cavities show resonant peaks as narrow as few MHz, comparable with the typical Doppler linewidth of THz molecular transitions and slightly broader than the free-running QCL emission spectrum. The effects of the optical feedback from one cavity to the QCL are examined by using the other cavity as a frequency reference.

Photodetectors based on graphene, other two-dimensional materials and hybrid systems.

Graphene and other two-dimensional materials, such as transition metal dichalcogenides, have rapidly established themselves as intriguing building blocks for optoelectronic applications, with a strong focus on various photodetection platforms. The versatility of these material systems enables their application in areas including ultrafast and ultrasensitive detection of light in the ultraviolet, visible, infrared and terahertz frequency ranges. These detectors can be integrated with other photonic components based on the same material, as well as with silicon photonic and electronic technologies. Here, we provide an overview and evaluation of state-of-the-art photodetectors based on graphene, other two-dimensional materials, and hybrid systems based on the combination of different two-dimensional crystals or of two-dimensional crystals and other (nano)materials, such as plasmonic nanoparticles, semiconductors, quantum dots, or their integration with (silicon) waveguides.

Intrinsic stability of quantum cascade lasers against optical feedback.

We study the time dependence of the optical power emitted by terahertz and mid-IR quantum cascade lasers in presence of optical reinjection and demonstrate unprecedented continuous wave (CW) emission stability for strong feedback. We show that the absence of coherence collapse or other CW instabilities typical of diode lasers is inherently associated with the high value of the photon to carrier lifetime ratio and the negligible linewidth enhancement factor of quantum cascade lasers.

Nanometer size field effect transistors for terahertz detectors.

Nanometer size field effect transistors can operate as efficient resonant or broadband terahertz detectors, mixers, phase shifters and frequency multipliers at frequencies far beyond their fundamental cut-off frequency. This work is an overview of some recent results concerning the application of nanometer scale field effect transistors for the detection of terahertz radiation.

Nanowire-based field effect transistors for terahertz detection and imaging systems.

The development of self-assembled nanostructure technologies has recently opened the way towards a wide class of semiconductor integrated devices, with progressively optimized performances and the potential for a widespread range of electronic and photonic applications. Here we report on the development of field effect transistors (FETs) based on semiconductor nanowires (NWs) as highly-sensitive room-temperature plasma-wave broadband terahertz (THz) detectors. The electromagnetic radiation at 0.3 THz is funneled onto a broadband bow-tie antenna, whose lobes are connected to the source and gate FET electrodes. The oscillating electric field experienced by the channel electrons, combined with the charge density modulation by the gate electrode, results in a source-drain signal rectification, which can be read as a DC signal output. We investigated the influence of Se-doping concentration of InAs NWs on the detection performances, reaching responsivity values higher than 100 V W⁻¹, with noise-equivalent-power of ∼10⁻9 W Hz(⁻½). Transmission imaging experiments at 0.3 THz show the good reliability and sensitivity of the devices in a real practical application.

Phase-locking to a free-space terahertz comb for metrological-grade terahertz lasers.

Optical frequency comb synthesizers have represented a revolutionary approach to frequency metrology, providing a grid of frequency references for any laser emitting within their spectral coverage. Extending the metrological features of optical frequency comb synthesizers to the terahertz domain would be a major breakthrough, due to the widespread range of accessible strategic applications and the availability of stable, high-power and widely tunable sources such as quantum cascade lasers. Here we demonstrate phase-locking of a 2.5 THz quantum cascade laser to a free-space comb, generated in a LiNbO(3) waveguide and covering the 0.1-6 THz frequency range. We show that even a small fraction (<100 nW) of the radiation emitted from the quantum cascade laser is sufficient to generate a beat note suitable for phase-locking to the comb, paving the way to novel metrological-grade terahertz applications, including high-resolution spectroscopy, manipulation of cold molecules, astronomy and telecommunications.

Graphene field-effect transistors as room-temperature terahertz detectors.

The unique optoelectronic properties of graphene make it an ideal platform for a variety of photonic applications, including fast photodetectors, transparent electrodes in displays and photovoltaic modules, optical modulators, plasmonic devices, microcavities, and ultra-fast lasers. Owing to its high carrier mobility, gapless spectrum and frequency-independent absorption, graphene is a very promising material for the development of detectors and modulators operating in the terahertz region of the electromagnetic spectrum (wavelengths in the hundreds of micrometres), still severely lacking in terms of solid-state devices. Here we demonstrate terahertz detectors based on antenna-coupled graphene field-effect transistors. These exploit the nonlinear response to the oscillating radiation field at the gate electrode, with contributions of thermoelectric and photoconductive origin. We demonstrate room temperature operation at 0.3 THz, showing that our devices can already be used in realistic settings, enabling large-area, fast imaging of macroscopic samples.