First-principles study of magnetic interactions and excitations in antiferromagnetic van der Waals material MPX3(M=Mn, Fe, Co, Ni; X=S, Se).

Transition metal phosphorus trichalcogenides MPX3(M = Mn, Fe, Co, Ni; X = S, Se), as layered van der Waals antiferromagnetic (AFM) materials, have emerged as a promising platform for exploring two-dimensional (2D) magnetism. Based on density functional theory, we present a comprehensive investigation of the electronic and magnetic properties of MPX3. We calculated the spin exchange interactions as well as magnetocrystalline anisotropy energy. The numerical results reveal thatJ3is AFM in all cases, andJ2is significantly smaller compared to bothJ3andJ1. This behavior can be understood with regard to exchange paths and electron filling. Compared to other materials within this family, FePS3and CoPS3demonstrate significant easy-axis anisotropy. Using the obtained parameters, we estimated the Néel temperatureTNand Curie-Weiss temperatureθCW, and the results are in good agreement with the experimental observations. We further calculated the magnon spectra and successfully reproduce several typical features observed experimentally. Finally, we give helpful suggestions for the strong constraints about the range of non-negligible magnetic interactions based on the relations between magnon eigenvalues at high-symmetrykpoints in honeycomb lattices.

Coherent ultrafast photoemission from a single quantized state of a one-dimensional emitter.

Femtosecond laser-driven photoemission source provides an unprecedented femtosecond-resolved electron probe not only for atomic-scale ultrafast characterization but also for free-electron radiation sources. However, for conventional metallic electron source, intense lasers may induce a considerable broadening of emitting energy level, which results in large energy spread (>600 milli-electron volts) and thus limits the spatiotemporal resolution of electron probe. Here, we demonstrate the coherent ultrafast photoemission from a single quantized energy level of a carbon nanotube. Its one-dimensional body can provide a sharp quantized electronic excited state, while its zero-dimensional tip can provide a quantized energy level act as a narrow photoemission channel. Coherent resonant tunneling electron emission is evidenced by a negative differential resistance effect and a field-driven Stark splitting effect. The estimated energy spread is ~57 milli-electron volts, which suggests that the proposed carbon nanotube electron source may promote electron probe simultaneously with subangstrom spatial resolution and femtosecond temporal resolution.

Observation of robust zero-energy state and enhanced superconducting gap in a trilayer heterostructure of MnTe/Bi2Te3/Fe(Te, Se).

The interface between magnetic material and superconductors has long been predicted to host unconventional superconductivity, such as spin-triplet pairing and topological nontrivial pairing state, particularly when spin-orbital coupling (SOC) is incorporated. To identify these unconventional pairing states, fabricating homogenous heterostructures that contain such various properties are preferred but often challenging. Here, we synthesized a trilayer-type van der Waals heterostructure of MnTe/Bi2Te3/Fe(Te, Se), which combined s-wave superconductivity, thickness-dependent magnetism, and strong SOC. Via low-temperature scanning tunneling microscopy, we observed robust zero-energy states with notably nontrivial properties and an enhanced superconducting gap size on single unit cell (UC) MnTe surface. In contrast, no zero-energy state was observed on 2-UC MnTe. First-principle calculations further suggest that the 1-UC MnTe has large interfacial Dzyaloshinskii-Moriya interaction and a frustrated AFM state, which could promote noncolinear spin textures. It thus provides a promising platform for exploring topological nontrivial superconductivity.

High-Throughput Investigations of Topological and Nodal Superconductors.

The theory of symmetry indicators has enabled database searches for topological materials in normal conducting phases, which has led to several encyclopedic topological material databases. To date, such a database for topological superconductors is yet to be achieved because of the lack of information about pairing symmetries of realistic materials. In this Letter, sidestepping this issue, we tackle an alternative problem: the predictions of topological and nodal superconductivity in materials for each single-valued representation of point groups. Based on recently developed symmetry indicators for superconductors, we provide comprehensive mappings from pairing symmetries to the topological or nodal superconducting nature for nonmagnetic materials listed in the Inorganic Crystal Structure Database. We quantitatively show that around 90% of computed materials are topological or nodal superconductors when a pairing that belongs to a one-dimensional nontrivial representation of point groups is assumed. When materials are representation-enforced nodal superconductors, positions and shapes of the nodes are also identified. When combined with experiments, our results will help us understand the pairing mechanism and facilitate realizations of the long-sought Majorana fermions promising for topological quantum computations.

Designing light-element materials with large effective spin-orbit coupling.

Spin-orbit coupling (SOC), which is the core of many condensed-matter phenomena such as nontrivial band gap and magnetocrystalline anisotropy, is generally considered appreciable only in heavy elements. This is detrimental to the synthesis and application of functional materials. Therefore, amplifying the SOC effect in light elements is crucial. Herein, focusing on 3d and 4d systems, we demonstrate that the interplay between crystal symmetry and electron correlation can significantly enhance the SOC effect in certain partially occupied orbital multiplets through the self-consistently reinforced orbital polarization as a pivot. Thereafter, we provide design principles and comprehensive databases, where we list all the Wyckoff positions and site symmetries in all two-dimensional (2D) and three-dimensional crystals that could have enhanced SOC effect. Additionally, we predict nine material candidates from our selected 2D material pool as high-temperature quantum anomalous Hall insulators with large nontrivial band gaps of hundreds of meV. Our study provides an efficient and straightforward way for predicting promising SOC-active materials, relieving the use of heavy elements for next-generation spin-orbitronic materials and devices.

Self-Assembly of Isostatic Self-Dual Colloidal Crystals.

Self-dual structures whose dual counterparts are themselves possess unique hidden symmetry, beyond the description of classical spatial symmetry groups. Here we propose a strategy based on a nematic monolayer of attractive half-cylindrical colloids to self-assemble these exotic structures. This system can be seen as a 2D system of semidisks. By using Monte Carlo simulations, we discover two isostatic self-dual crystals, i.e., an unreported crystal with pmg space-group symmetry and the twisted kagome crystal. For the pmg crystal approaching the critical point, we find the double degeneracy of the full phononic spectrum at the self-dual point and the merging of two tilted Weyl nodes into one critically tilted Dirac node. The latter is "accidentally" located on the high-symmetry line. The formation of this unconventional Dirac node is due to the emergence of the critical flatbands at the self-dual point, which are linear combinations of "finite-frequency" floppy modes. These modes can be understood as mechanically coupled self-dual rhombus chains vibrating in some unique uncoupled ways. Our work paves the way for designing and fabricating self-dual materials with exotic mechanical or phononic properties.

Colossal Terahertz Photoresponse at Room Temperature: A Signature of Type-II Dirac Fermiology.

The discovery of Dirac semimetal has stimulated bourgeoning interests for exploring exotic quantum-transport phenomena, holding great promise for manipulating the performance of photoelectric devices that are related to nontrivial band topology. Nevertheless, it still remains elusive on both the device implementation and immediate results, with some enhanced or technically applicable electronic properties signified by the Dirac fermiology. By means of Pt doping, a type-II Dirac semimetal Ir1-xPtxTe2 with protected crystal structure and tunable Fermi level has been achieved in this work. It has been envisioned that the metal-semimetal-metal device exhibits an order of magnitude performance improvement at terahertz frequency when the Fermi level is aligned with the Dirac node (i.e., x ∼ 0.3) and a room-temperature photoresponsivity of 0.52 A·W-1 at 0.12 THz and 0.45 A·W-1 at 0.3 THz, which benefited from the excitation of type-II Dirac fermions. Furthermore, van der Waals integration with Dirac semimetals exhibits superb performance with noise equivalent power less than 24 pW·Hz-0.5, rivaling the state-of-the-art detectors. Our work provides a route to explore the nontrivial topology of Dirac semimetal for addressing targeted applications in imaging and biomedical sensing across a terahertz gap.

Plasmonic evolution of atomically size-selected Au clusters by electron energy loss spectrum.

The plasmonic response of gold clusters with atom number (N) = 100-70 000 was investigated using scanning transmission electron microscopy-electron energy loss spectroscopy. For decreasing N, the bulk plasmon remains unchanged above N = 887 but then disappears, while the surface plasmon firstly redshifts from 2.4 to 2.3 eV above N = 887 before blueshifting towards 2.6 eV down to N = 300, and finally splitting into three fine features. The surface plasmon's excitation ratio is found to follow N 0.669, which is essentially R 2. An atomically precise evolution picture of plasmon physics is thus demonstrated according to three regimes: classical plasmon (N = 887-70 000), quantum confinement corrected plasmon (N = 300-887) and molecule related plasmon (N < 300).

Anisotropic ultrasensitive PdTe2-based phototransistor for room-temperature long-wavelength detection.

Emergent topological Dirac semimetals afford fresh pathways for optoelectronics, although device implementation has been elusive to date. Specifically, palladium ditelluride (PdTe2) combines the capabilities provided by its peculiar band structure, with topologically protected electronic states, with advantages related to the occurrence of high-mobility charge carriers and ambient stability. Here, we demonstrate large photogalvanic effects with high anisotropy at terahertz frequency in PdTe2-based devices. A responsivity of 10 A/W and a noise-equivalent power lower than 2 pW/Hz0.5 are achieved at room temperature, validating the suitability of PdTe2-based devices for applications in photosensing, polarization-sensitive detection, and large-area fast imaging. Our findings open opportunities for exploring uncooled and sensitive photoelectronic devices based on topological semimetals, especially in the highly pursuit terahertz band.

Tuning Electrical Conductance in Bilayer MoS2 through Defect-Mediated Interlayer Chemical Bonding.

Interlayer interaction could substantially affect the electrical transport in transition metal dichalcogenides, serving as an effective way to control the device performance. However, it is still challenging to utilize interlayer interaction in weakly interlayer-coupled materials such as pristine MoS2 to realize layer-dependent tunable transport behavior. Here, we demonstrate that, by substitutional doping of vanadium atoms in the Mo sites of the MoS2 lattice, the vanadium-doped monolayer MoS2 device exhibits an ambipolar field effect characteristic, while its bilayer device demonstrates a heavy p-type field effect feature, in sharp contrast to the pristine monolayer and bilayer MoS2 devices, both of which show similar n-type electrical transport behaviors. Moreover, the electrical conductance of the doped bilayer MoS2 device is drastically enhanced with respect to that of the doped monolayer MoS2 device. Employing first-principle calculations, we reveal that such striking behaviors arise from the presence of electrical transport networks associated with the enhanced interlayer hybridization of S-3pz orbitals between adjacent layers activated by vanadium dopants in the bilayer MoS2, which is nevertheless absent in its monolayer counterpart. Our work highlights that the effect of dopant not only is confined in the in-plane electrical transport behavior but also could be used to activate out-of-plane interaction between adjacent layers in tailoring the electrical transport of the bilayer transitional metal dichalcogenides, which may bring different applications in electronic and optoelectronic devices.

Experimental Observation of the Gate-Controlled Reversal of the Anomalous Hall Effect in the Intrinsic Magnetic Topological Insulator MnBi2Te4 Device.

Magnetic topological insulator, a platform for realizing quantum anomalous Hall effect, axion state, and other novel quantum transport phenomena, has attracted a lot of interest. Recently, it is proposed that MnBi2Te4 is an intrinsic magnetic topological insulator, which may overcome the disadvantages in the magnetic doped topological insulator, such as disorder. Here we report on the gate-reserved anomalous Hall effect (AHE) in the MnBi2Te4 thin film. By tuning the Fermi level using the top/bottom gate, the AHE loop gradually decreases to zero and the sign is reversed. The positive AHE exhibits distinct coercive fields compared with the negative AHE. It reaches a maximum inside the gap of the Dirac cone, and its amplitude exhibits a linear scaling with the longitudinal conductance. The positive AHE is attributed to the competition of the intrinsic Berry curvature and the extrinsic skew scattering. Its gate-controlled switching contributes a scheme for the topological spin field-effect transistors.

Evidence for singular-phonon-induced nematic superconductivity in a topological superconductor candidate Sr0.1Bi2Se3.

Superconductivity mediated by phonons is typically conventional, exhibiting a momentum-independent s-wave pairing function, due to the isotropic interactions between electrons and phonons along different crystalline directions. Here, by performing inelastic neutron scattering measurements on a superconducting single crystal of Sr0.1Bi2Se3, a prime candidate for realizing topological superconductivity by doping the topological insulator Bi2Se3, we find that there exist highly anisotropic phonons, with the linewidths of the acoustic phonons increasing substantially at long wavelengths, but only for those along the [001] direction. This observation indicates a large and singular electron-phonon coupling at small momenta, which we propose to give rise to the exotic p-wave nematic superconducting pairing in the MxBi2Se3 (M = Cu, Sr, Nb) superconductor family. Therefore, we show these superconductors to be example systems where electron-phonon interaction can induce more exotic superconducting pairing than the s-wave, consistent with the topological superconductivity.

Experimental Demonstration of Acoustic Chern Insulators.

We report the experimental realization of an acoustic Chern insulator (ACI), by using an angular-momentum-biased resonator array with the broken Lorentz reciprocity. High Q-factor resonance of the constituent rotors is leveraged to reduce the required rotation speed. ACI is a new topological acoustic system analogous to the electronic quantum Hall insulator, based on an effective magnetic field. Experimental results show that the ACI featured with a stable and uniform metafluid flow bias supports one-way nonreciprocal transport of sound at its edges, which is topologically immune to various types of defects. Our work opens up opportunities for exploring unique observable topological phases and developing topological-insulator-based nonreciprocal devices in acoustics.

Topological materials discovery by large-order symmetry indicators.

Crystalline symmetries play an important role in the classification of band structures, and their richness leads to various topological crystalline phases. On the basis of our recently developed method for the efficient discovery of topological materials using symmetry indicators, we explore topological materials in five space groups ( S G s), which are diagnosed by large-order symmetry indicators (ℤ8 and ℤ12) and support the coexistence of several kinds of gapless boundary states in a single compound. We predict many candidate materials; some representatives include Pt3Ge ( S G 140 ), graphite ( S G 194 ), XPt3 ( S G 221 , X = Sn, Pb), Au4Ti ( S G 87 ), and Ti2Sn ( S G 194 ). As by-products, we also find that AgXF3 ( S G 140 , X = Rb, Cs) and AgAsX ( S G 194 , X = Sr, Ba) are good Dirac semimetals with clean Fermi surfaces. The proposed materials provide a good platform for studying the novel properties emerging from the interplay between different types of boundary states.

Comprehensive search for topological materials using symmetry indicators.

Over the past decade, topological materials-in which the topology of electron bands in the bulk material leads to robust, unconventional surface states and electromagnetism-have attracted much attention. Although several theoretically proposed topological materials have been experimentally confirmed, extensive experimental exploration of topological properties, as well as applications in realistic devices, has been restricted by the lack of topological materials in which interference from trivial Fermi surface states is minimized. Here we apply our method of symmetry indicators to all suitable nonmagnetic compounds in all 230 possible space groups. A database search reveals thousands of candidate topological materials, of which we highlight 241 topological insulators and 142 topological crystalline insulators that have either noticeable full bandgaps or a considerable direct gap together with small trivial Fermi pockets. Furthermore, we list 692 topological semimetals that have band crossing points located near the Fermi level. These candidate materials open up the possibility of using topological materials in next-generation electronic devices.

Ultrahigh conductivity in Weyl semimetal NbAs nanobelts.

In two-dimensional (2D) systems, high mobility is typically achieved in low-carrier-density semiconductors and semimetals. Here, we discover that the nanobelts of Weyl semimetal NbAs maintain a high mobility even in the presence of a high sheet carrier density. We develop a growth scheme to synthesize single crystalline NbAs nanobelts with tunable Fermi levels. Owing to a large surface-to-bulk ratio, we argue that a 2D surface state gives rise to the high sheet carrier density, even though the bulk Fermi level is located near the Weyl nodes. A surface sheet conductance up to 5-100 S per □ is realized, exceeding that of conventional 2D electron gases, quasi-2D metal films, and topological insulator surface states. Corroborated by theory, we attribute the origin of the ultrahigh conductance to the disorder-tolerant Fermi arcs. The evidenced low-dissipation property of Fermi arcs has implications for both fundamental study and potential electronic applications.

Theory for the negative longitudinal magnetoresistance in the quantum limit of Kramers Weyl semimetals.

Negative magnetoresistance is rare in non-magnetic materials. Recently, negative magnetoresistance has been observed in the quantum limit of ß-Ag2Se, where only one band of Landau levels is occupied in a strong magnetic field parallel to the applied current. ß-Ag2Se is a material that hosts a Kramers Weyl cone with band degeneracy near the Fermi energy. Kramers Weyl cones exist at time-reversal invariant momenta in all symmorphic chiral crystals, and at a subset of these momenta, including the Γ point, in non-symmorphic chiral crystals. Here, we present a theory for the negative magnetoresistance in the quantum limit of Kramers Weyl semimetals. We show that, although there is a band touching similar to those in Weyl semimetals, negative magnetoresistance can exist without a chiral anomaly. We find that it requires screened Coulomb scattering potentials between electrons and impurities, which is naturally the case in ß-Ag2Se.

Na2IrIVCl6: Spin-Orbital-Induced Semiconductor Showing Hydration-Dependent Structural and Magnetic Variations.

Iridium(IV) oxides have gained increased attention in recent years owing to the presence of competing spin-orbit coupling and Coulomb interactions, which facilitate the emergence of novel quantum phenomena. In contrast, the electronic structure and magnetic properties of IrIV-based molecular materials remain largely unexplored. In this paper, we take a fresh look at an old but puzzling compound, Na2IrCl6, which can be hydrated to form two stable phases with formulas Na2IrCl6·2H2O and Na2IrCl6·6H2O. Their crystal structures are well illustrated based on X-ray powder diffraction data. Magnetic studies reveal that Na2IrCl6 and Na2IrCl6·2H2O are canted antiferromagnets with ordering temperatures of 7.4 and 2.7 K, respectively, whereas Na2IrCl6·6H2O is paramagnetic down to 1.8 K. First-principle calculations on Na2IrCl6 reveal a Jeff = 1/2 ground state, and the band structures show that Na2IrCl6 is a spin-orbital-induced semiconductor with an indirect gap of about 0.18 eV.

Photoresponsivity of an all-semimetal heterostructure based on graphene and WTe2.

Heterostructures based on two-dimensional (2D) materials have sparked wide interests in both fundamental physics and applied devices. Recently, Dirac/Weyl semimetals are emerging as capable functional materials for optoelectronic devices. However, thus far the interfacial coupling of an all-semimetal 2D heterostructure has not been investigated, and its effects on optoelectronic properties remain less well understood. Here, a heterostructure comprising of all semi-metallic constituents, namely graphene and WTe2, is fabricated. Standard photocurrent measurements on a graphene/WTe2 phototransistor reveal a pronounced photocurrent enhancement (a photoresponsivity ~8.7 A/W under 650 nm laser illumination). Transport and photocurrent mapping suggest that both photovoltaic and photothermoelectric effects contribute to the enhanced photoresponse of the hybrid system. Our results help to enrich the understanding of new and emerging device concepts based on 2D layered materials.