One Stone Two Birds: Anomalously Enhancing the Cross-Plane and In-Plane Heat Transfer in 2D/3D Heterostructures by Defects Engineering.

This study addresses a crucial challenge in two-dimensional (2D) material-based electronic devices-inefficient heat dissipation across the van der Waals (vdW) interface connecting the 2D material to its three-dimensional (3D) substrate. The objective is to enhance the interfacial thermal conductance (ITC) of 2D/3D heterostructures without compromising the intrinsic thermal conductivities (κ) of 2D materials. Using 2D-MoS2/3D-GaN as an example, a novel strategy to enhance both the ITC across 2D/3D interface and κ of 2D material is proposed by introducing a controlled concentration (ρ) of vacancy defects to substrate's bottom surface. Molecular dynamics simulations demonstrate a notable 2.1-fold higher ITC of MoS2/GaN at ρ = 4% compared to the no-defective counterpart, along with an impressive 56% enhancement in κ of MoS2 compared to the conventional upper surface modification approaches. Phonon dynamics analysis attributes the ITC enhancement to increased phonon coupling between MoS2 and GaN, resulting from polarization conversion and hybridization of phonons at the defective surface. Spectral energy density analysis affirms that the improved κ of MoS2 directly results from the proposed strategy, effectively reducing phonon scattering at the interface. This work provides an effective approach for enhancing heat transfer in 2D/3D vdW heterostructures, promisingly advancing electronics' heat dissipation.

Phonon dynamic behaviors induced by amorphous layers at heterointerfaces.

An amorphous layer is commonly found at the interfaces of heterostructures due to lattice and thermal mismatch between dissimilar materials. While existing research has explored the impact of these layers on interfacial thermal transport, a comprehensive understanding of the underlying microscopic mechanisms remains essential for advancing thermal nanodevice development. Through phonon wave packet simulations, we investigated the dynamic behaviors of phonons crossing the amorphous interlayer at the GaN/AlN interface from the mode level. Our results highlight the amorphous layer's capability to notably adjust the polarization properties of incoming phonons, culminating in phonon localization. By examining transmission outcomes on a per-mode basis, we demonstrate the amorphous layer's impediment on phonon transport. Notably, this resistance escalates with an increase in the amorphous layer thickness (L), with certain high-frequency TA phonons showing unexpectedly high transmissivity due to polarization conversion and inelastic scattering at the amorphous interface. In addition, we observe that the amorphous layer prompts multiple reflections of incident phonons, instigating discernible from the two-beam interference equation. Finally, in pursuit of enhanced phonon transport, we employ annealing techniques to optimize the interface morphology, leading to the recrystallization of the amorphous layer. This optimization yields a substantial enhancement of interfacial thermal conductance by up to 38% for L = 3 nm.

Atomic-Scale Surface Engineering for Giant Thermal Transport Enhancement Across 2D/3D van der Waals Interfaces.

Heat dissipation in two-dimensional (2D) material-based electronic devices is a critical issue for their applications. The bottleneck for this thermal issue is inefficient for heat removal across the van der Waals (vdW) interface between the 2D material and its supporting three-dimensional (3D) substrate. In this work, we demonstrate that an atomic-scale thin amorphous layer atop the substrate surface can remarkably enhance the interfacial thermal conductance (ITC) of the 2D-MoS2/3D-GaN vdW interface by a factor of 4 compared to that of the untreated crystalline substrate surface. Meanwhile, the ITC can be broadly manipulated through adjusting substrate surface roughness. Phonon dynamic and heat flux spectrum analyses show that this giant enhancement is attributed to the increased phonon densities and channels at the interfaces and enhanced phonon coupling. The slight surface fluctuation in MoS2 and the increased diffuse interfacial scattering facilitate energy transfer from MoS2's in-plane phonons to its out-of-plane phonons and then to the substrate. In addition, it is further found that the substrate and its surface topology can dramatically influence the thermal conductivity of MoS2 due to the reduction of phonon relaxation time, especially for low-frequency acoustic phonons. This study elucidates the effects of the amorphous surface of the substrate on thermal transport across 2D/3D vdW interfaces and provides a new dimension to aid in the heat dissipation of 2D-based electronic devices via atomic-scale surface engineering.

First-principles based deep neural network force field for molecular dynamics simulation of N-Ga-Al semiconductors.

Accurate interatomic force fields are of paramount importance for molecular dynamics simulations to explore the thermal transport at the GaN/AlN heterogenous interface, which is a key factor hindering heat dissipation and limiting the performance of GaN power electronic devices. In this work, an interatomic potential (force field) based on a deep neural network technique and first-principles calculations is developed for N-Ga-Al semiconductors to predict the elastic and thermodynamic properties. Using our deep neural network potential (NNP), the precise structural features, elastic constants, and thermal conductivities of GaN, AlN, and their alloy are obtained, which are well consistent with those from experiments and first-principles calculations. The interfacial thermal conductance of GaN/AlN heterostructures with different interfacial morphologies are further studied using molecular dynamics simulations with the NNP. It is found that atomic interdiffusion and disorder at the interfaces dramatically reduces the interfacial thermal conductance. The developed NNP exhibits a larger effective dimension with respect to classical empirical potentials and reaches competitive performances, thus pointing towards attractive advantages in the study of GaN heterostructures and devices with the NNP.

Phosphorene grain boundary effect on phonon transport and phononic applications.

Grain boundaries (GBs) widely exist in black phosphorene (BP), which plays a vital role in determining the properties of 2D materials. Significant GB effect on the thermal boundary resistance in BP structures is found by using molecular dynamics calculations and lattice dynamic analysis. A remarkably high interface thermal resistance is observed. By analyzing the strain distribution and phonon vibrational spectra, we reveal this high thermal resistance originates from phonon localization and strong phonon boundary scattering induced by the local stress at the GB area. Particularly, it is interesting to find that the partial phonon modes display weak localization when GBs present. The fraction of atoms participating in a particular phonon vibrational mode has been quantified through the calculation of phonon participation ratio. In addition, the thermal boundary resistance is found size-dependent, which further induces interesting thermal rectification effect in the BP structures. A high rectification ratio is obtained by adjusting the structural length and temperature bias. These findings provide a through insight into the GB effects on individual phonon mode transmission across the GBs, and highlight that the GB effect is an important factor and should be taken into account for the applications of BP-based phononic devices.