RESUMEN
We present measurements of the two-photon absorption coefficients beta(2) of 10 different semiconductors having band-gap energies between 1.4 and 3.7 eV. We find that beta(2) varies as E(g)(-3), as predicted by theory. In addition, the absolute values of beta(2) agree with theory, which includes the effect of nonparabolic bands, the average difference being less than 26%. This agreement permits confident predictions of two-photon absorption coefficients of other materials at other wavelengths.
RESUMEN
Results of laser-induced damage measurements in CdTe and other selected II-VI materials are reported. These studies were conducted using pulsed 1.06-microm radiation from a Nd:YAG laser. The laser pulse width was varied from approximately 40 to 9000 psec (9 nsec). The laser-induced surface breakdown irradiance measured for CdTe over this pulse width range scaled as t(p)(-1/2)[t(p) is the laser pulse width (FWHM)]. This indicates that laser-induced damage in this material is due to linear absorption by a thin surface contamination layer.