Incoherence-coherence crossover and low-temperature Fermi-liquid-like behavior in AFe2As2 (A = K, Rb, Cs): evidence from electrical transport properties.

We study the normal-state transport properties of AFe2As2 (A = K, Rb and Cs) single crystals using Hall coefficient, resistivity and magnetoresistance (MR) measurements. In all three materials, the Hall coefficient R H shows a strong temperature dependence, which is typical for multi-band systems. In particular, R H develops an upturn below a characteristic temperature [Formula: see text], which is in agreement with the incoherence-coherence crossover reported in recent nuclear magnetic resonance studies. A Fermi-liquid-like state, characterized by T (2) behavior of the resistivity and a positive orbital MR obeying Kohler's rule, emerges below T FL ∼0.4 [Formula: see text]. The superconducting transition temperature T c experiences a simultaneous suppression with [Formula: see text] and T FL as the alkali ion's radius increases from A = K to A = Cs, suggesting that the unconventional superconductivity in the AFe2As2 series is related to the strength of the electronic coherence. A phase diagram, similar to that in the heavy fermion Kondo lattice system, is obtained. Based on all the experimental evidence, we argue that the physical properties of this family of heavily hole-doped Fe-based superconductors are controlled by the hybridization between itinerant carriers and localized orbitals, and the Kondo scenario could be effective in such a case.

Emergent Kondo Lattice Behavior in Iron-Based Superconductors AFe_{2}As_{2} (A=K, Rb, Cs).

Here, we experimentally study the origin of d-electron heavy fermion (HF) behavior in iron-based superconductors (FeSCs) AFe_{2}As_{2} (A=K, Rb, Cs). Nuclear magnetic resonance on ^{75}As reveals a universal coherent-incoherent crossover with a characteristic temperature T^{*}. Below T^{*}, a so-called "Knight shift anomaly" is first observed in FeSCs, which exhibits a scaling behavior similar to f-electron HF materials. Furthermore, the scaling rule also regulates the manifestation of magnetic fluctuation. These results undoubtedly support an emergent Kondo lattice scenario for the d-electron HF behavior, which qualifies the AFe_{2}As_{2} (A=K, Rb, Cs) as d-electron HF superconductors.

Evolution of High-Temperature Superconductivity from a Low-T_{c} Phase Tuned by Carrier Concentration in FeSe Thin Flakes.

We report the evolution of superconductivity in an FeSe thin flake with systematically regulated carrier concentrations by the liquid-gating technique. With electron doping tuned by the gate voltage, high-temperature superconductivity with an onset at 48 K can be achieved in an FeSe thin flake with T_{c} less than 10 K. This is the first time such high temperature superconductivity in FeSe is achieved without either an epitaxial interface or external pressure, and it definitely proves that the simple electron-doping process is able to induce high-temperature superconductivity with T_{c}^{onset} as high as 48 K in bulk FeSe. Intriguingly, our data also indicate that the superconductivity is suddenly changed from a low-T_{c} phase to a high-T_{c} phase with a Lifshitz transition at a certain carrier concentration. These results help to build a unified picture to understand the high-temperature superconductivity among all FeSe-derived superconductors and shed light on the further pursuit of a higher T_{c} in these materials.

Angular-Dependent Phase Factor of Shubnikov-de Haas Oscillations in the Dirac Semimetal Cd_{3}As_{2}.

We measure the magnetotransport properties of the three-dimensional Dirac semimetal Cd_{3}As_{2} single crystal under magnetic fields up to 36 T. Shubnikov-de Haas (SdH) oscillations are clearly resolved and the n=1 Landau level is reached. A detailed analysis on the intercept of the Landau index plot reveals a significant dependence of the SdH phase factor on the orientation of the applied magnetic field. When the magnetic field is applied in the [001] direction, i.e., along the fourfold screw axis of the tetragonal crystal structure, a nontrivial π Berry phase, as predicted for the Dirac fermions, is observed. However, in a magnetic field tilted away from the [001] direction, the π Berry phase is evidently reduced, and a considerable enhancement of the effective mass is also revealed. Our observations demonstrate that the Dirac dispersion in Cd_{3}As_{2} is effectively modified in a tilted magnetic field, whereas the preserved π Berry phase in a magnetic field along the [001] direction can be related to the realization of the Weyl fermions. The sudden change of the SdH phase also indicates a possible topological phase transition induced by the symmetry-breaking effect.

Pressure-Induced Electronic Transition in Black Phosphorus.

In a semimetal, both electrons and holes contribute to the density of states at the Fermi level. The small band overlaps and multiband effects engender novel electronic properties. We show that a moderate hydrostatic pressure effectively suppresses the band gap in the elemental semiconductor black phosphorus. An electronic topological transition takes place at approximately 1.2 GPa, above which black phosphorus evolves into a semimetal state that is characterized by a colossal positive magnetoresistance and a nonlinear field dependence of Hall resistivity. The Shubnikov-de Haas oscillations detected in magnetic field reveal the complex Fermi surface topology of the semimetallic phase. In particular, we find a nontrivial Berry phase in one Fermi surface that emerges in the semimetal state, as evidence of a Dirac-like dispersion. The observed semimetallic behavior greatly enriches the material property of black phosphorus and sets the stage for the exploration of novel electronic states in this material.

Enhanced superconductivity by rare-earth metal doping in phenanthrene.

We successfully synthesized La- and Sm-doped phenanthrene powder samples and observed superconductivity in them at T(c) around 6 K. The T(c)s are 6.1 K for La(1) phenanthrene and 6.0 K for Sm(1) phenanthrene, which are enhanced by about 1 and 0.5 K compared to those in A(3) phenanthrene (A = K and Rb) and in Ae(1.5) phenanthrene (Ae = Sr and Ba) superconductors, respectively. The superconductive shielding fractions for La(1) phenanthrene and Sm(1) phenanthrene are 46.1% and 49.8% at 2 K, respectively. The small effect of doping with the magnetic ion Sm(3+) on T(c) and the positive pressure dependence coefficient of T(c) strongly suggest unconventional superconductivity in the doped phenanthrene superconductors. The charge transfer to organic molecules from dopants of La and Sm induces a redshift of 7 cm(-1) per electron for the mode at 1441 cm(-1) in the Raman spectra, which is almost the same as those observed in A(3) phenanthrene (A = K and Rb) and Ae(1.5) phenanthrene (Ae = Sr and Ba) superconductors.

Measurements of the anisotropic in-plane resistivity of underdoped FeAs-based pnictide superconductors.

We systematically investigated the in-plane resistivity anisotropy of electron-underdoped EuFe(2-x)Co(x)As(2) and BaFe(2-x)Co(x)As(2) and hole-underdoped Ba(1-x)K(x)Fe(2)As(2). Large in-plane resistivity anisotropy was found in the former samples, while tiny in-plane resistivity anisotropy was detected in the latter ones. When it is detected, the anisotropy starts above the structural transition temperature and increases smoothly through it. As the temperature is lowered further, the anisotropy takes a dramatic enhancement through the magnetic transition temperature. We found that the anisotropy is universally tied to the presence of T-linear behavior of resistivity. Our results demonstrate that the nematic state is caused by electronic degrees of freedom, and the microscopic orbital involvement in the magnetically ordered state must be fundamentally different between the hole- and electron-doped materials.