Evolution of the Electronic Properties of Tellurium Crystals with Plasma Irradiation Treatment.

Tellurium exhibits exceptional intrinsic electronic properties. However, investigations into the modulation of tellurium's electronic properties through physical modification are notably scarce. Here, we present a comprehensive study focused on the evolution of the electronic properties of tellurium crystal flakes under plasma irradiation treatment by employing conductive atomic force microscopy and Raman spectroscopy. The plasma-treated tellurium experienced a process of defect generation through lattice breaking. Prior to the degradation of electronic transport performance due to plasma irradiation treatment, we made a remarkable observation: in the low-energy region of hydrogen plasma-treated tellurium, a notable enhancement in conductivity was unexpectedly detected. The mechanism underlying this enhancement in electronic transport performance was thoroughly elucidated by comparing it with the electronic structure induced by argon plasma irradiation. This study not only fundamentally uncovers the effects of plasma irradiation on tellurium crystal flakes but also unearths an unprecedented trend of enhanced electronic transport performance at low irradiation energies when utilizing hydrogen plasma. This abnormal trend bears significant implications for guiding the prospective application of tellurium-based 2D materials in the realm of electronic devices.

Metasurface-based circular polarizer with a controllable phase and its application in holographic imaging.

A diatomic circular polarizer based on a single-layered metasurface is proposed. This metasurface circular polarizer carries the controllable phase besides the desired circular dichroism, which is different from the existing circular polarizers. The diatoms contain two nanoholes equivalent to half-wave plates with a specified cross angle and a fixed phase difference. The alternative circular polarization transmission of this circular polarizer depends on the relative angular position of diatoms, and the controllable phase of this circular polarizer can be adjusted through rotating nanoholes. The generation of the optical vortex and holographic imaging verifies the polarization and phase manipulation of the diatomic circular polarizer. The numerical simulations and the experimental measurement give the powerful verification. Simple design, compact structure, and poly-functionality enable the wide applications of circular polarizer in integrated and polarized optics.

Versatile Integrated Polarizers Based on Geometric Metasurfaces.

We propose versatile integrated polarizers based on geometric metasurfaces. Metasurface polarizer consists of an L-shaped hole array etched on a silver film, and it can simultaneously generate several polarization states, including linear polarization, circular polarization, elliptical polarization, or even hybrid polarization. Meanwhile, the combination of output polarization states changes with the illumination polarization type. The theoretical analysis provides a detailed explanation for the generation of the integrated polarization states. The well-designed metasurface polarizers may generate more complex polarization modes, including vector beams and vector vortex beams. The theoretical and simulated results confirm the polarization performance of the proposed integrated metasurface polarizers. The compact design of metasurface polarizers and the controllable generation of versatile polarization combinations are a benefit to the applications of polarization light in optical imaging, biomedical sensing, and material processing.

Two-dimensional multibit optoelectronic memory with broadband spectrum distinction.

Optoelectronic memory plays a vital role in modern semiconductor industry. The fast emerging requirements for device miniaturization and structural flexibility have diverted research interest to two-dimensional thin layered materials. Here, we report a multibit nonvolatile optoelectronic memory based on a heterostructure of monolayer tungsten diselenide and few-layer hexagonal boron nitride. The tungsten diselenide/boron nitride memory exhibits a memory switching ratio approximately 1.1 × 106, which ensures over 128 (7 bit) distinct storage states. The memory demonstrates robustness with retention time over 4.5 × 104 s. Moreover, the ability of broadband spectrum distinction enables its application in filter-free color image sensor. This concept is further validated through the realization of integrated tungsten diselenide/boron nitride pixel matrix which captured a specific image recording the three primary colors (red, green, and blue). The heterostructure architecture is also applicable to other two-dimensional materials, which is confirmed by the realization of black phosphorus/boron nitride optoelectronic memory.

A Novel Green TiO2 Photocatalyst with a Surface Charge-Transfer Complex of Ti and Hydrazine Groups.

The optical property of TiO2 plays an important role in its various and promising photocatalytic applications. Previous efforts in improving its optical properties include doping with various metal and/or non-metal elements, coupling with other colorful semiconductors or molecules, and hydrogenating to crystalline/disordered core/shell nanostructures. Here, we report a beautiful green TiO2 achieved by forming the charge-transfer complex of colorless hydrazine groups and surface Ti4+ , which extends the optical absorption into the near infrared region (≈1100 nm, 1.05 eV). It shows an enhanced photocatalytic performance in hydrogen generation under simulated sunlight, and degradation of organic pollution under visible light due to an impurity state (about 0.28 eV) resulting in fast electron-hole separation and injection of electrons from the ligand to the conduction band of TiO2 . This study demonstrates an alternative approach to tune the optical, impurity state and photocatalytic properties of TiO2 nanoparticles and we believe this will spur a wide interest in related materials and applications.

Quantum cascade lasers designed toward shorter wavelengths.

Quantum cascade lasers (QCLs) are normally based on one-dimensional confined quantum wells. In this scheme, it is still a challenge to produce lasing with a frequency higher than mid-infrared. Here, we discuss the possibility to extend the spectral range of QCLs to the higher frequency region by adding another dimensional confinement. Taking the ZnO/MgO system as an example, we demonstrate theoretically that such a two-dimensional confined QCL can operate at wavelengths from the near-infrared [Formula: see text] µm, 1.57 µm, 1.13 µm to the visible 734 nm.

p-Type conductivity in N-doped ZnO: the role of the N(Zn)-V(O) complex.

Although nitrogen-doped zinc oxide has been fabricated as a light-emitting diode, the origin of its p-type conductivity remains mysterious. Here, by analyzing the surface reaction pathway of N in ZnO with first-principles density functional theory calculations, we demonstrate that the origin of p-type conductivity of N-doped ZnO can originate from the defect complexes of N(Zn)-V(O) and N(O)-V(Zn). Favored by the Zn-polar growth, the shallow acceptor of N(O)-V(Zn) actually evolves from the double-donor state of N(Zn)-V(O). While N(Zn)-V(O) is metastable, the p-doping mechanism of N(Zn)-V(O)→N(O)-V(Zn) in ZnO will be free from the spontaneous compensation from the intrinsic donors. The results may offer clearer strategies for doping ZnO p-type more efficiently with N.