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Guided nanowires grown on polymer surfaces facilitate their seamless integration as flexible devices without post-growth processing steps. However, this is challenging due to the inability of polymer films to provide the required lattice-matching effect. In this work, this challenge is addressed by replicating highly aligned nanogrooves from a compact disc (CD) onto a casted flexible polydimethylsiloxane (PDMS) surface. Leveraging the replicated nanogrooves, copper hexadecafluorophthalocyanine (F16CuPc) and various metal phthalocyanines are guided into large-area, self-aligned nanowires. Subsequently, by employing specifically designed shadow masks during electrode deposition, these nanowires are seamlessly integrated as either a monolithic flexible photodetector with a large sensing area or on-chip flexible photodetector arrays. The resulting flexible photodetectors exhibit millisecond and long-term stable response to UV-vis-NIR light. Notably, they demonstrate exceptional bending stability, retaining stable and sensitive photoresponse even at a curvature radius as low as 0.5 cm and after enduring 1000 bending cycles. Furthermore, the photodetector array showcases consistent sensitivity and response speed across the entire array. This work not only proves the viability of guided nanowire growth on flexible polymer surfaces by replicating CD nanogrooves but also underscores the potential for large-scale monolithic integration of guided nanowires as flexible devices.
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X-ray dark-filed imaging is a powerful approach to quantify the dimension of micro-structures of the object. Often, a series of dark-filed signals have to be measured under various correlation lengths. For instance, this is often achieved by adjusting the sample positions by multiple times in Talbot-Lau interferometer. Moreover, such multiple measurements can also be collected via adjustments of the inter-space between the phase gratings in dual phase grating interferometer. In this study, the energy resolving capability of the dual phase grating interferometer is explored with the aim to accelerate the data acquisition speed of dark-filed imaging. To do so, both theoretical analyses and numerical simulations are investigated. Specifically, the responses of the dual phase grating interferometer at varied X-ray beam energies are studied. Compared with the mechanical position translation approach, the combination of such energy resolving capability helps to greatly shorten the total dark-field imaging time in dual phase grating interferometer.
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Four-wave-mixing microscopy is widely researched in both biology and medicine. In this paper, we present a simplified near-degenerate four-wave-mixing microscopy (SNDFWM). An ultra-steep long-pass filter is utilized to produce an ultra-steep edge on the spectrum of a femtosecond pulse, and a super-sensitive four-wave-mixing (FWM) signal can be generated via an ultra-steep short-pass filter. Compared with the current state-of-the-art FWM microscopy, this SNDFWM microscopy has the advantages of simpler experimental apparatus, lower cost, and easier operation. We demonstrate that this SNDFWM microscopy has high sensitivity and high spatial resolution in both nanowires and biological tissues. We also show that the SNDFWM microscopy can achieve an ultra-sensitive detection based on the electron-resonance effect. This method might find an important application in tracking of nano drugs in vivo.
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Realizing the substantial potential of bottom-up 1D semiconductor nanostructures in developing functional nanodevices calls for dedicated single-nanostructure bandgap engineering by various growth approaches. Although thermal evaporation has been advised as a facile approach for most semiconductors to form 1D nanostructures from bottom-up, its capability of achieving single-nanostructure bandgap engineering was considered a challenge. In 2011, we succeeded in the direct growth of composition-graded CdS1-x Se x (0 ≤ x ≤ 1) nanowires by upgrading the thermal-evaporation tube furnace with a home-made magnetic-pulling module. This report aims to provide a comprehensive review of the latest advances in the single-nanostructure bandgap engineering enabled by the magnetic-pulling thermal evaporation growth. The report begins with the description of different magnetic-pulling thermal evaporation strategies associated with diverse examples of composition-engineered 1D nanostructures. Following is an elaboration on their optoelectronic applications based on the resulting single-nanostructure bandgap engineering, including monolithic white-light sources, proof-of-concept asymmetric light propagation and wavelength splitters, monolithic multi-color and white-light lasers, broadband-response photodetectors, high-performance transistors, and recently the most exciting single-nanowire spectrometer. In the end, this report concludes with some personal perspectives on the directions toward which future research might be advanced.
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1D core-shell heterojunction nanostructures have great potential for high-performance, compact optoelectronic devices owing to their high interface area to volume ratio, yet their bottom-up assembly toward scalable fabrication remains a challenge. Here the site-controlled growth of aligned CdS-CdSe core-shell nanowalls is reported by a combination of surface-guided vapor-liquid-solid horizontal growth and selective-area vapor-solid epitaxial growth, and their integration into photodetectors at wafer-scale without postgrowth transfer, alignment, or selective shell-etching steps. The photocurrent response of these nanowalls is reduced to 200 ns with a gain of up to 3.8 × 103 and a photoresponsivity of 1.2 × 103 A W-1 , the fastest response at such a high gain ever reported for photodetectors based on compound semiconductor nanostructures. The simultaneous achievement of sub-microsecond response and high-gain photocurrent is attributed to the virtues of both the epitaxial CdS-CdSe heterojunction and the enhanced charge-separation efficiency of the core-shell nanowall geometry. Surface-guided nanostructures are promising templates for wafer-scale fabrication of self-aligned core-shell nanostructures toward scalable fabrication of high-performance compact photodetectors from the bottom-up.
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Tri-gate transistors offer better performance than planar transistors by exerting additional gate control over a channel from two lateral sides of semiconductor nanowalls (or "fins"). Here we report the bottom-up assembly of aligned CdS nanowalls by a simultaneous combination of horizontal catalytic vapor-liquid-solid growth and vertical facet-selective noncatalytic vapor-solid growth and their parallel integration into tri-gate transistors and photodetectors at wafer scale (cm2) without postgrowth transfer or alignment steps. These tri-gate transistors act as enhancement-mode transistors with an on/off current ratio on the order of 108, 4 orders of magnitude higher than the best results ever reported for planar enhancement-mode CdS transistors. The response time of the photodetector is reduced to the submicrosecond level, 1 order of magnitude shorter than the best results ever reported for photodetectors made of bottom-up semiconductor nanostructures. Guided semiconductor nanowalls open new opportunities for high-performance 3D nanodevices assembled from the bottom up.
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In this article, ordered ZnO@ZnS core-shell structures have been produced on a stainless mesh by a two-step approach without using a template. ZnO nanorods fabricated by a chemical vapor method are transferred into a 50 ml autoclave for a second stage ion-exchange reaction followed by heating at 120 °C for 4-16 h. The ZnO core is prepared as the conducting channel and ZnS as the active material. Such unique architecture exhibits remarkable electrochemical performance with high capacitance and desirable cycle life. When evaluating as the electrode for supercapacitors, the ZnO@ZnS core-shell structure delivers a high specific capacitance of 603.8 F g-1 at a current density of 2 A g-1, with 9.4% capacitance loss after cycling 3000 times. The fabrication strategy presented here is simple and cost-effective, which can open new avenues for large-scale applications of the novel materials in energy storage.
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The indirect bandgap of single-crystalline silicon has so far precluded the full integration of silicon microelectronics with photonics-which is expected to allow the realization of low-cost, high-speed optical information processing and communication in the future. Here we report the growth of europium (Eu)-doped Si-SiO2 core-shell nanowires by an oxide-assisted chemical vapor deposition method. The Eu concentration in these nanowires is effectively improved by intentionally increasing the thickness of SiO2 shells. As a result, a strong Si-compatible red emission from Eu(3+) ions was observed under laser illumination. The effect of Eu(3+) concentration on the emission efficiency was comprehensively studied, with the highest efficiency at Eu content about 0.8 at%. The relaxation mechanism of this concentration dependent luminescence was further explored through lifetime measurements. In light of the strong characteristic red emission and nanoscale footprint, these nanowires are promising Si-compatible light emission materials for future integrated nanophotonics.
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We report the growth of high-quality CdS/CdSxSe1-x axial heterostructure nanowires (NWHs) via a temperature-controlled chemical vapor deposition method. Microstructural characterizations revealed that these NWHs have a single-crystalline structure with abrupt heterojunctions. Local photoluminescence and mapping near the heterojunctions show only two separated narrow band-edge emission bands from the two different adjacent semiconductors, further demonstrating the high-quality of these heterostructures. Moreover, the photodetector based on the single NWH shows a performance (higher responsivity (1.18 × 10(2) A/W), faster response speed (rise â¼68 µs, decay â¼137 µs), higher Ion/Ioff ratio (10(5)), higher EQE (3.1 × 10(4) %), and broader detection range (350-650 nm)) at room temperature superior to that of photodetectors based on single band gap nanostructures. This work suggests a much simpler route to achieve superior NWHs for applications in optoelectronic devices.
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We report the synthesis of three dimensional (3D) NiCo2O4@NiCo2O4 nanocactus arrays grown directly on a Ni current collector using a facile solution method followed by electrodeposition. They possess a unique 3D hierarchical core-shell structure with large surface area and dual-functionalities that can serve as electrodes for both supercapacitors (SCs) and lithium-ion batteries (LIBs). As the SC electrode, they deliver a remarkable specific capacitance of 1264 F g(-1) at a current density of 2 A g(-1) and ~93.4% of capacitance retention after 5000 cycles at 2 A g(-1). When used as the anode for LIBs, a high reversible capacity of 925 mA h g(-1) is achieved at a rate of 120 mA g(-1) with excellent cyclic stability and rate capability. The ameliorating features of the NiCo2O4 core/shell structure grown directly on highly conductive Ni foam, such as hierarchical mesopores, numerous hairy needles and a large surface area, are responsible for the fast electron/ion transfer and large active sites which commonly contribute to the excellent electrochemical performance of both the SC and LIB electrodes.
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ZnCo2O4 nanoflakes, as electrodes for supercapacitors, are grown on a cellular nickel foam using a cost-effective hydrothermal procedure. The mesoporous ZnCo2O4 nanoflakes have large electroactive surface areas with strong adhesion to the Ni foam, allowing fast ion and electron transport. The nanoarchitecture electrodes deliver an excellent specific capacitance of 1220 F g(-1) at a current density of 2 A g(-1) in a 2 M KOH aqueous solution and a long-term cyclic stability of 94.2% capacitance retention after 5000 cycles. The fabrication strategy is facile, cost-effective, and can offer great promise for large-scale supercapacitor applications.
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Well-aligned nickel oxide (NiO) nanosheets with the thickness of a few nanometers supported on a flexible substrate (Ni foam) have been fabricated by a hydrothermal approach together with a post-annealing treatment. The three-dimensional NiO nanosheets were further used as electrode materials to fabricate supercapacitors, with high specific capacitance of 943.5, 791.2, 613.5, 480, and 457.5 F g(-1) at current densities of 5, 10, 15, 20, and 25 A g(-1), respectively. The NiO nanosheets combined well with the substrate. When the electrode material was bended, it can still retain 91.1% of the initial capacitance after 1,200 charging/discharging cycles. Compared with Co3O4 and NiO nanostructures, the specific capacitance of NiO nanosheets is much better. These characteristics suggest that NiO nanosheet electrodes are promising for energy storage application with high power demands.
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High-performance visible-light photodetectors are achieved based on single nanoribbon lateral heterostructures composed of two different semiconductor alloys epitaxially grown in the lateral direction. They reveal superior spectral response range, responsivity, Ion/Ioff ratio, and external quantum efficiency, relative to devices based on single composition structures.
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Band gap engineering of atomically thin two-dimensional layered materials is critical for their applications in nanoelectronics, optoelectronics, and photonics. Here we report, for the first time, a simple one-step chemical vapor deposition approach for the simultaneous growth of alloy MoS2xSe2(1-x) triangular nanosheets with complete composition tunability. Both the Raman and the photoluminescence studies show tunable optical properties consistent with composition of the alloy nanosheets. Importantly, all samples show a single bandedge emission peak, with the spectral peak position shifting from 668 nm (for pure MoS2) to 795 nm (for pure MoSe2), indicating the high quality for these complete composition alloy nanosheets. These band gap engineered 2D structures could open up an exciting opportunity for probing their fundamental physical properties in 2D and may find diverse applications in functional electronic/optoelectronic devices.
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Nanoscale near-infrared photodetectors are attractive for their potential applications in integrated optoelectronic devices. Here we report the synthesis of GaSb/GaInSb p-n heterojunction semiconductor nanowires for the first time through a controllable chemical vapor deposition (CVD) route. Based on these nanowires, room-temperature, high-performance, near-infrared photodetectors were constructed. The fabricated devices show excellent light response in the infrared optical communication region (1.55 µm), with an external quantum efficiency of 10(4), a responsivity of 10(3) A/W, and a short response time of 2 ms, which shows promising potential applications in integrated photonics and optoelectronics devices or systems.
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Well-defined Au-SiO(2)-CdTe composite nanoparticles were synthesized via a multistep chemical approach in water solution to gain insight into the interaction between metal and semiconductor nanostructures. Photoluminescence measurement reveals that the fluorescence of CdTe quantum dots (QDs) in this composite with optimized SiO(2) thickness (4 nm) has over ten times enhancement compared with that of bare CdTe QDs. The considerable fluorescence enhancement of CdTe QDs is attributed to the surface plasmon resonance, which is further confirmed by the lifetime measurement. The enhanced fluorescence can be used to improve the performance of CdTe QDs as fluorescence probe and may find potential applications in biolabeling.
Asunto(s)
Compuestos de Cadmio/química , Colorantes Fluorescentes/síntesis química , Oro/química , Nanopartículas/química , Dióxido de Silicio/química , Resonancia por Plasmón de Superficie/métodos , Telurio/química , Nanopartículas/ultraestructura , FotonesRESUMEN
Low-threshold nanoscale lasers are attractive for their promising applications in highly integrated photonic devices and systems. Here we report the controllable growth of composition-symmetric CdS(x)Se(1-x) nanowires by using a multistep thermal evaporation route with moving sources. Microstructure analyses reveal the obtained wires are high-quality single crystals with the composition gradually changed from the center toward their both ends. Under laser illumination, these wires exhibit symmetrical color distribution along the length direction, with red at the center and green at the both ends. Optically pumped lasing is realized at room temperature using these composition-symmetric nanowires, with the threshold several times lower than that of composition-homogeneous wires. This new nanowire structure will have potential applications as low-threshold nanoscale lasers in integrated nanophotonics.
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Composition-tunable semiconductor alloy nanowires are emerging as an important class of materials for the realization of high-performance laterally-arranged multiple bandgap (LAMB) solar cells. Here we report the first growth of GaZnSeAs quaternary alloy nanowires with composed elements between two different groups using a temperature/space-selective CVD route. Under laser excitation, these special quaternary alloy nanowires exhibit composition-related characteristic emissions, with peak wavelengths gradually tunable from 470 nm (2.64 eV) to 832 nm (1.49 eV), covering almost the entire visible spectrum. Surface photovoltage measurements further reveal that these alloy nanowires have tunable bandgaps along the length of the substrate, making them promising candidates for developing high-efficiency LAMB solar cells. These quaternary alloy nanowires represent a new advancement in material synthesis and would have potential applications in a variety of function-tunable and broadband-response optoelectronic devices.
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Asymmetric light propagation is crucial to the development of optical-based functional components in nanophotonics. Diverse configurations and structures have been proposed to allow asymmetrical propagation of photonic signal, but on-chip integration is difficult to achieve due to their complex structure and/or relatively large footprint. Here we report the first design and realization of asymmetric light propagation in single semiconductor nanowires with a composition gradient along the length. We show the asymmetric nanowire waveguides can be synthesized using a simple thermal evaporation and vapor transport approach without involving complicated and costly fabrication processes. Our studies demonstrate the asymmetric nanowire waveguides offer some significant advantages over previous designs, including ultra-low operation power, tunable working wavelength and nanoscale footprint, making them attractive building blocks for integrated photonic circuits.
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Compact wavelength-sensitive optical components are desirable for optical information processing and communication in photonic integrated system. In this work, optical waveguiding along single composition-graded CdS(x)Se(1-x) nanowires were systematically investigated. Under a focused laser excitation, the excited light can be guided passively along the bandgap-increased direction of the nanowire, keeping the photonic energy of the guided light almost unchanged during the whole propagation. In comparison, the excited light is guided actively through incessantly repeated band-to-band reabsorption and re-emitting processes along the bandgap-decreased direction, resulting in a gradual wavelength conversion during propagation. On the basis of this wavelength-converted waveguiding, a concept of nanoscale wavelength splitter is demonstrated by assembling a graded nanowire with several composition-uniform nanowires into branched nanowire structure. Our study indicates that composition-graded semiconductor nanowires would open new exciting opportunities in developing new wavelength-sensitive optical components for integrated nanophotonic devices.