SRSF1 induces glioma progression and has a potential diagnostic application in grading primary glioma.

Glioma is the most common intracranial tumor of the central nervous system in adults; however, the diagnosis of glioma, and its grading and histological subtyping, is challenging for pathologists. The present study assessed serine and arginine rich splicing factor 1 (SRSF1) expression in 224 glioma cases in the Chinese Glioma Genome Atlas (CGGA) database, and verified its expression by immunohistochemical analysis of specimens from 70 clinical patients. In addition, the prognostic potential of SRSF1 concerning the survival status of patients was evaluated. In vitro, the biological role of SRSF1 was assessed using MTT, colony formation, wound healing and Transwell assays. The results revealed that SRSF1 expression was significantly associated with the grading and the histopathological subtype of glioma. As determined using a receiver operating characteristic curve analysis, the specificity of SRSF1 for glioblastoma (GBM) and World Health Organization (WHO) grade 3 astrocytoma was 40 and 48%, respectively, whereas the sensitivity was 100 and 85%. By contrast, pilocytic astrocytoma tumors exhibited negative immunoexpression of SRSF1. Additionally, Kaplan-Meier survival analysis indicated that high SRSF1 expression predicted a worse prognosis for patients with glioma in both the CGGA and clinical cohorts. In vitro, the results demonstrated that SRSF1 promoted the proliferation, invasion and migration of U87MG and U251 cells. These data suggested that immunohistochemical analysis of SRSF1 expression is highly sensitive and specific in the diagnosis of GBM and WHO grade 3 astrocytoma, and may have an important role in glioma grading. Furthermore, the lack of SRSF1 is a potential diagnostic biomarker for pilocytic astrocytoma. However, neither in oligodendroglioma and astrocytoma, nor in GBM was an association detected between SRSF1 expression and IDH1 mutations or 1p/19q co-deletion. These findings indicated that SRSF1 may serve as a prognostic factor in glioma cases and could have an active role in promoting glioma progression.

Multiple Metastatic Extra-gastrointestinal Stromal Tumors with Plasmoid Differentiation: A Case Report and Review of Literature.

Extra-gastrointestinal stromal tumors (EGISTs) are rare mesenchymal tumors that arise from the abdominal, pelvic or retroperitoneal region, unrelated to the gastrointestinal tract. However, cases with a plasmoid morphology are extremely rare. we hererin report a 49-year-old man with abdominal pain who underwent magnetic resonance imaging that revealed an irregular tumor (103×71 mm) in size, in the space between stomach and pancreas, diagnosed as an EGISIT, we also reviewed the clinicopathological characteristics and immunohistochemical characteristics, molecular genetic features and differential diagnoses previously reported in the literature.

Large Photomultiplication by Charge-Self-Trapping for High-Response Quantum Dot Infrared Photodetectors.

PbS colloidal quantum dots (CQDs) are emerging as promising candidates for next-generation, low-cost, and high-performance infrared photodetectors. Recently, photomultiplication has been explored to improve the detectivity of CQD infrared photodetectors by doping charge-trapping material into a matrix. However, this relies on remote doping that could influence carrier transfer giving rise to limited photomultiplication. Herein, a charge-self-trapped ZnO layer is prepared by a surface reaction between acid and ZnO. Photogenerated electrons trapped by oxygen vacancy defects at the ZnO surface generate a strong interfacial electrical field and induce large photomultiplication at extremely low bias. A PbS CQD infrared photodiode based on this structure shows a response (R) of 77.0 A·W-1 and specific detectivity of 1.5 × 1011 Jones at 1550 nm under a -0.3 V bias. This self-trapped ZnO layer can be applied to other photodetectors such as perovskite-based devices.

The 3D-structure-mediated growth of zero-dimensional Cs4SnX6 nanocrystals.

Innovations in approaches to synthesize high-quality lead perovskite nanocrystals have enabled the prosperous development of nanocrystal-based optoelectronic devices in recent years. However, the transfer of these approaches to tin perovskite nanocrystals, which are the most promising lead-free perovskite candidates, remains unsuccessful. Herein, based on a three-dimensional (3D)-structure-mediated approach, monodispersed and highly luminescent inorganic zero-dimensional (0D) tin perovskite nanocrystals (NCs) are synthesized. The crystal growth kinetics are revealed via tracking the intermediate structures and using theoretical simulations. The luminescence quantum yield of Cs4SnBr6 NCs is as high as 52%, which is the highest value for inorganic tin perovskite NCs. Cs4SnI6 NCs with a luminescence quantum yield of 27% are synthesized, which is 35 times higher than previous results. Based on the Cs4SnBr6 NCs, an ultraviolet-light-pumped white-light-emitting device (WLED) with an excellent color-rendering index of 92 is fabricated.

Silicon: quantum dot photovoltage triodes.

Silicon is widespread in modern electronics, but its electronic bandgap prevents the detection of infrared radiation at wavelengths above 1,100 nanometers, which limits its applications in multiple fields such as night vision, health monitoring and space navigation systems. It is therefore of interest to integrate silicon with infrared-sensitive materials to broaden its detection wavelength. Here we demonstrate a photovoltage triode that can use silicon as the emitter but is also sensitive to infrared spectra owing to the heterointegrated quantum dot light absorber. The photovoltage generated at the quantum dot base region, attracting holes from silicon, leads to high responsivity (exceeding 410 A·W-1 with Vbias of -1.5 V), and a widely self-tunable spectral response. Our device has the maximal specific detectivity (4.73 × 1013 Jones with Vbias of -0.4 V) at 1,550 nm among the infrared sensitized silicon detectors, which opens a new path towards infrared and visible imaging in one chip with silicon technology compatibility.

Passivation of the Buried Interface via Preferential Crystallization of 2D Perovskite on Metal Oxide Transport Layers.

The open-circuit voltage (Voc ) of perovskite solar cells is limited by non-radiative recombination at perovskite/carrier transport layer (CTL) interfaces. 2D perovskite post-treatments offer a means to passivate the top interface; whereas, accessing and passivating the buried interface underneath the perovskite film requires new material synthesis strategies. It is posited that perovskite ink containing species that bind strongly to substrates can spontaneously form a passivating layer with the bottom CTL. The concept using organic spacer cations with rich NH2 groups is implemented, where readily available hydrogens have large binding affinity to under-coordinated oxygens on the metal oxide substrate surface, inducing preferential crystallization of a thin 2D layer at the buried interface. The passivation effect of this 2D layer is examined using steady-state and time-resolved photoluminescence spectroscopy: the 2D interlayer suppresses non-radiative recombination at the buried perovskite/CTL interface, leading to a 72% reduction in surface recombination velocity. This strategy enables a 65 mV increase in Voc for NiOx based p-i-n devices, and a 100 mV increase in Voc for SnO2 -based n-i-p devices. Inverted solar cells with 20.1% power conversion efficiency (PCE) for 1.70 eV and 22.9% PCE for 1.55 eV bandgap perovskites are demonstrated.

One-Step Synthesis of SnI2·(DMSO)x Adducts for High-Performance Tin Perovskite Solar Cells.

Contemporary thin-film photovoltaic (PV) materials contain elements that are scarce (CIGS) or regulated (CdTe and lead-based perovskites), a fact that may limit the widespread impact of these emerging PV technologies. Tin halide perovskites utilize materials less stringently regulated than the lead (Pb) employed in mainstream perovskite solar cells; however, even today's best tin-halide perovskite thin films suffer from limited carrier diffusion length and poor film morphology. We devised a synthetic route to enable in situ reaction between metallic Sn and I2 in dimethyl sulfoxide (DMSO), a reaction that generates a highly coordinated SnI2·(DMSO)x adduct that is well-dispersed in the precursor solution. The adduct directs out-of-plane crystal orientation and achieves a more homogeneous structure in polycrystalline perovskite thin films. This approach improves the electron diffusion length of tin-halide perovskite to 290 ± 20 nm compared to 210 ± 20 nm in reference films. We fabricate tin-halide perovskite solar cells with a power conversion efficiency of 14.6% as certified in an independent lab. This represents a ∼20% increase compared to the previous best-performing certified tin-halide perovskite solar cells. The cells outperform prior earth-abundant and heavy-metal-free inorganic-active-layer-based thin-film solar cells such as those based on amorphous silicon, Cu2ZnSn(S/Se)4 , and Sb2(S/Se)3.

Integrated Structure and Device Engineering for High Performance and Scalable Quantum Dot Infrared Photodetectors.

Colloidal quantum dots (CQDs) are emerging as promising materials for the next generation infrared (IR) photodetectors, due to their easy solution processing, low cost manufacturing, size-tunable optoelectronic properties, and flexibility. Tremendous efforts including material engineering and device structure manipulation have been made to improve the performance of the photodetectors based on CQDs. In recent years, benefiting from the facial integration with materials such as 2D structure, perovskite and silicon, as well as device engineering, the performance of CQD IR photodetectors have been developing rapidly. On the other hand, to prompt the application of CQD IR photodetectors, scalable device structures that are compatible with commercial systems are developed. Herein, recent advances of CQD based IR photodetectors are summarized, especially material integration, device engineering, and scalable device structures.

Inverted Si:PbS Colloidal Quantum Dot Heterojunction-Based Infrared Photodetector.

Silicon and PbS colloidal quantum dot heterojunction photodetectors combine the advantages of the Si device and PbS CQDs, presenting a promising strategy for infrared light detecting. However, the construction of a high-quality CQDs:Si heterojunction remains a challenge. In this work, we introduce an inverted structure photodetector based on n-type Si and p-type PbS CQDs. Compared with the existing normal structure photodetector with p-type Si and n-type PbS CQDs, it has a lower energy band offset that provides more efficient charge extraction for the device. With the help of Si wafer surface passivation and the Si doping density optimization, the device delivers a high detectivity of 1.47 × 1011 Jones at 1540 nm without working bias, achieving the best performance in Si/PbS photodetectors in this region now. This work provides a new strategy to fabricate low-cost high-performance PbS CQDs photodetectors compatible with silicon arrays.

Amorphous ZnO/PbS Quantum Dots Heterojunction for Efficient Responsivity Broadband Photodetectors.

The integration of lead sulfide quantum dots (QDs) with a high-conductivity material that is compatible with a scalable fabrication is an important route for the applications of QD-based photodetectors. Herein, we first developed a broadband photodetector by combining amorphous ZnO and PbS QDs, forming a heterojunction structure. The photodetector showed detectivity up to 7.9 × 1012 and 4.1 × 1011 jones under 640 and 1310 nm illumination, respectively. The role of the oxygen background pressure in the electronic structure of ZnO films grown by pulsed laser deposition was systematically studied, and it was found to play an important role in the conductivity associated with the variation of the oxygen vacancy concentration. By increasing the oxygen vacancy concentration, the electron mobility of amorphous ZnO layers dramatically increased and the work function decreased, which were beneficial for the photocurrent enhancement of ZnO/PbS QD photodetectors. Our results provide a simple and highly scalable approach to develop broadband photodetectors with high performance.

Efficient and Stable Inverted Perovskite Solar Cells Incorporating Secondary Amines.

Large-bandgap perovskites offer a route to improve the efficiency of energy capture in photovoltaics when employed in the front cell of perovskite-silicon tandems. Implementing perovskites as the front cell requires an inverted (p-i-n) architecture; this architecture is particularly effective at harnessing high-energy photons and is compatible with ionic-dopant-free transport layers. Here, a power conversion efficiency of 21.6% is reported, the highest among inverted perovskite solar cells (PSCs). Only by introducing a secondary amine into the perovskite structure to form MA1- x DMAx PbI3 (MA is methylamine and DMA is dimethylamine) are defect density and carrier recombination suppressed to enable record performance. It is also found that the controlled inclusion of DMA increases the hydrophobicity and stability of films in ambient operating conditions: encapsulated devices maintain over 80% of their efficiency following 800 h of operation at the maximum power point, 30 times longer than reported in the best prior inverted PSCs. The unencapsulated devices show record operational stability in ambient air among PSCs.

Bi-inorganic-ligand coordinated colloidal quantum dot ink.

Quantum dot light emitting diodes (QLEDs) are rising as a promising light emitting technology. However, the widely used insulating organic ligands hamper carrier injection. Herein, we developed a bi-inorganic-ligand strategy to replace organic ligands and dispersed QDs in a benign solvent butylamine. The all-inorganic QD film shows enhanced luminescence intensity and superior thermal stability and conductivity. In the end, we exploited the first prototype all inorganic QLED.

Highly Efficient Inverted Structural Quantum Dot Solar Cells.

Highly efficient PbS colloidal quantum dot (QD) solar cells based on an inverted structure have been missing for a long time. The bottlenecks are the construction of an effective p-n heterojunction at the illumination side with smooth band alignment and the absence of serious interface carrier recombination. Here, solution-processed nickel oxide (NiO) as the p-type layer and lead sulfide (PbS) QDs with iodide ligand as the n-type layer are explored to build a p-n heterojunction at the illumination side. The large depletion region in the QD layer at the illumination side leads to high photocurrent. Interface carrier recombination at the interface is effectively prohibited by inserting a layer of slightly doped p-type QDs with 1,2-ethanedithiol as ligands, leading to improved voltage of the device. Based on this graded device structure design, the efficiency of inverted structural heterojunction PbS QD solar cells is improved to 9.7%, one time higher than the highest efficiency achieved before.