RESUMEN
Heterogeneous stacking based on two-dimensional Ruddlesden-Popper (RP) perovskite is a desired strategy for the reasonable combination of stability and efficiency. Constructing heterostructures with tunable optoelectronic properties further provide opportunities to design multi-functional devices. Herein, we present a first-principle research to investigate the geometric and electronic structures of RP perovskite heterostructure PtSe2/Cs2PbI4and its tunable electronic properties induced by thickness modulation and external strains. The results indicate that the heterostructure based on Cs2PbI4monolayer and PtSe2monolayer has a type-II band alignment, which is suitable for the photovoltaic applications. With the layer number of PtSe2in heterostructure increases from monolayer to bilayer, the band alignment of PtSe2/Cs2PbI4heterostructure can switch from type-II to type-I, which is beneficial for the luminescence device applications. However, when the thickness of PtSe2in heterostructure further increases to trilayer, the heterostructure exhibits metallic characteristic with a p-type Schottky barrier. In addition, we find the strain engineering is an effective knob in tuning the electronic properties of PtSe2/Cs2PbI4heterostructures with different thickness. These findings reveal the potential of PtSe2/Cs2PbI4heterostructure as a tunable hybrid material with substantial prospect in multi-functional applications.
RESUMEN
Metal doping, including Bi, Yb, Eu, Sb and so on, are important means to improve the photoelectric properties and stability of metal halide perovskite materials. Among these works, Bi-doped CsPbBr3 especially has attracted much attention for both experimental and theoretical investigation. But there are still some arguments to be solved. One view thinks that Bi doping in CsPbBr3 not only influences the band structure, but also improves the charge transfer (Raihana et al 2017 J. Am. Chem. Soc. 139 731-7). The other supported the points that there are no changes in the valence band structure of Bi-doped CsPbBr3 and the concept of the band-gap engineering in Bi-doped CsPbBr3 halide perovskite is not valid (Olga et al 2018 J. Phys. Chem. Lett. 9 5408-11). They also have different opinions for the reason of the red-shift phenomenon caused by Bi-doped CsPbBr3. In this work, the density functional theory (DFT) based first-principles methods is adopted to investigate the effect of the optical properties and electronic structure for Bi doping CsPbBr3. The calculated results clarify that the red-shift phenomenon is caused by the slight reduction of band gap and the transition levels of Bii and BiPb defects. The values of red-shift also were estimated about 150 meV for Bii defects, which is close the experimental value of about 140 meV. Moreover, our studies also show that the Bi doping does not affect the valence bands, but Bii defects change the electron distribution of the conduction band. Our work and experimental results support and confirm each other, which provides a useful reference for the study of Sb-doped CsPbBr3, Eu-doped CsPbBr3 and so on.
RESUMEN
Recently, the traditional infrared photodetectors (PDs) shows limited application in various areas, due to the narrow band-gap, high cost and even complex manufacturing process. In this situation, scientist have paid much attention to achieve the ultra broadband PDs from the deep ultraviolet to the near infrared. The energy band engineering for two-dimensional (2D) van der Waals heterojunction with free chemical dangling bonds is an effective method to fabricate High-performance Photodetectors. In this work, we employ density functional calculation to construct a type-II CdTe/MoS2 heterostructure and calculate its electronic properties. The results reveal that the CdTe/MoS2 has the narrow band gap of 0.64 eV and electrons transfer from the CdTe to MoS2 layer, which promotes the separation of photogenerated carriers and enhance the photoelectron conversion efficiency. Driven by the smaller band gap, it can respond to near infrared, visible and ultraviolet light, demonstrating it the promising application for solar cell. Furthermore, the analysis of molecules adsorption and band edge alignment indicates that the CdTe/MoS2 is prone to capture H2O and release the H2 molecules, which is conductive to the photocatalytic water splitting for hydrogen generation. Our work suggests that the CdTe/MoS2 heterostructure is a potential candidate as a solar cell and even photocatalyst, and also provides a new sight for experimental and theoretical research to design a highly efficient device.
RESUMEN
Ultrabroadband mid-frequency infrared photodetectors have important applications in surveillance, medical diagnosis, bioimaging and navigation aids. Thus, researchers hope to detect mid-infrared radiation with larger wavelength. However, due to the limitation of room temperature, it is difficult for these detectors to detect mid-infrared with 4 µm or larger wavelength. Therefore, at room temperature, how to realize mid-infrared detection in a wide range has become an urgent problem to be solved. In this paper, the band structure of SnX2 (X = S,Se)/ZnS and SnS2(1-Å)Se2Å /ZnS was studied by the density functional theory based first-principles methods. Under the specific stacking procedure, changing the [Formula: see text] of SnS2(1-Å)Se2Å , the band gap of heterojunctions can be continuously tuned from 0 to 0.97 eV. Amazingly, the band structure maintains the characteristics of a type-II heterojunction. The photodetection in our work is estimated for wavelengths from 1.2 µm to 10 µm, covering a wide wavelength range of mid-infrared. Such a wide range is considerable in current research. The characteristics of type-II band structure and the wide detection range imply that SnX2 /ZnS has great potential in mid-frequency infrared detection. Our work may provide some breakthroughs for the research of multiband photodetectors at room temperature.
RESUMEN
Electroluminescence devices based on all-inorganic halide perovskite material with excellent luminescence performance have been studied extensively in recent years. However, the important role for the electrodes of electroluminescence devices is payed few attention by theoretical and experimental studies. Appropriate electrodes can reduce the Schottky barrier height to decrease the energy loss, and prevent the metal impurities from diffusing into the perovskite material to generate deep traps levels, which improves the luminous efficiency and lifetime of devices. In this paper, not only the interface effects between CsPbBr3 and common metal electrode (Ag, Au, Ni, Cu and Pt) are studied by first-principle calculations, but also the diffusion effects of metal electrode atom into the CsPbBr3 layer are also explored by nudged elastic band calculations. The calculated results show the metal Ag is more suitable for the cathode for CsPbBr3 electroluminescence devices, while the metal Pt is more applicable for the anode. Based on the overall consideration about the interface effects and diffusion effects of the CsPbBr3-metal electrode junctions, the essential principle is analyzed. The work provides theoretical guidance for how to select the right electrode for the electroluminescence performance of all-inorganic halide perovskite. The critical factor of Schottky barrier height between the electrode and the light-emitting semiconductor, and transition level generated by metal impurities also provide a valuable reference how to select the suitable electrodes for other electroluminescence devices.
RESUMEN
Novel functionalized graphene oxide π-π stacking with conjugated polymers (P-GO) is fabricated via a simple ethanol-mediated mixing method, leading to better dispersion in organic nonpolar solvents and bypassing the inherent restrictions of hydrophilicity and oleophobicity. We analyze the mechanism of the incorporation of P-GO into inverted organic solar cells (OSCs) based on a poly[[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4- b]thiophenediyl]] (PTB7):[6,6]-phenyl C71 butyric acid methyl ester (PC71BM) system to investigate the possibility of high-performance thick-film OSC fabrication. It is verified that the incorporation of P-GO into the PTB7:PC71BM blend films leads to a decreased π-π stacking distance, enlarged coherence length for polymer, and optimized phase separation, resulting in more effective charge dissociation, reduced bimolecular recombination, and more balanced charge transport. The OSCs with 1% P-GO incorporation demonstrate a thickness-insensitive fill factor (57.8%) and power conversion efficiency (PCE) (7.31%) even with 250 nm thick photoactive layers, leading to a dramatic PCE enhancement of 34% compared with the control devices with the same thickness.
RESUMEN
In the title compound, C(40)H(32)Br(4)N(3)O(6)P(3), the cyclo-triphos-phazene ring adopts a planar conformation, with an r.m.s. deviation of 0.0247â Å. In the crystal, there is a weak inter-molecular C-Hâ¯O hydrogen bond as well as short inter-molecular Brâ¯Br contacts [3.3352â (12)â Å].
